| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018 | 297 | 2018 |
| Surface electronic structure of Si (111) 7× 7-Ge and Si (111) 5× 5-Ge studied with photoemission and inverse photoemission P Martensson, WX Ni, GV Hansson, JM Nicholls, B Reihl Physical Review B 36 (11), 5974, 1987 | 124 | 1987 |
| Observation of a charge transfer state in low‐bandgap polymer/fullerene blend systems by photoluminescence and electroluminescence studies Y Zhou, K Tvingstedt, F Zhang, C Du, WX Ni, MR Andersson, O Inganäs Advanced Functional Materials 19 (20), 3293-3299, 2009 | 100 | 2009 |
| Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si (100) films by molecular-beam epitaxy WX Ni, J Knall, MA Hasan, GV Hansson, JE Sundgren, SA Barnett, ... Physical Review B 40 (15), 10449, 1989 | 100 | 1989 |
| Synthesis design of artificial magnetic metamaterials using a genetic algorithm PY Chen, CH Chen, H Wang, JH Tsai, WX Ni Optics express 16 (17), 12806-12818, 2008 | 99 | 2008 |
| Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer JM Shieh, YF Lai, WX Ni, HC Kuo, CY Fang, JY Huang, CL Pan Applied physics letters 90 (5), 2007 | 84 | 2007 |
| New method to study band offsets applied to strained heterojunction interfaces WX Ni, J Knall, GV Hansson Physical Review B 36 (14), 7744, 1987 | 73 | 1987 |
| Fabrication and characterisation of Si-Si0. 7Ge0. 3 quantum dot light emitting diodes YS Tang, WX Ni, CMS Torres, GV Hansson Electronics Letters 31 (16), 1385-1386, 1995 | 66 | 1995 |
| SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm A Elfving, GV Hansson, WX Ni Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 528-532, 2003 | 63 | 2003 |
| Residual strain in GaN epilayers grown on sapphire and (6H) SiC substrates W Li, WX Ni Applied physics letters 68 (19), 2705-2707, 1996 | 63 | 1996 |
| n‐Si/p‐Si1−xGex/n‐Si double‐heterojunction bipolar transistors DX Xu, GD Shen, M Willander, WX Ni, GV Hansson Applied physics letters 52 (26), 2239-2241, 1988 | 60 | 1988 |
| δ-function-shaped Sb-doping profiles in Si (001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy WX Ni, GV Hansson, JE Sundgren, L Hultman, LR Wallenberg, JY Yao, ... Physical Review B 46 (12), 7551, 1992 | 55 | 1992 |
| Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission WX Ni, KB Joelsson, CX Du, IA Buyanova, G Pozina, WM Chen, ... Applied physics letters 70 (25), 3383-3385, 1997 | 54 | 1997 |
| X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (⩽ 100 nm) using a low temperature growth step WX Ni, K Lyutovich, J Alami, C Tengstedt, M Bauer, E Kasper Journal of crystal growth 227, 756-760, 2001 | 51 | 2001 |
| Spatially direct and indirect transitions observed for Si/Ge quantum dots M Larsson, A Elfving, PO Holtz, GV Hansson, WX Ni Applied physics letters 82 (26), 4785-4787, 2003 | 49 | 2003 |
| Electrical properties of Si films doped with 200‐eV In+ ions during growth by molecular‐beam epitaxy JP Noël, N Hirashita, LC Markert, YW Kim, JE Greene, J Knall, WX Ni, ... Journal of applied physics 65 (3), 1189-1197, 1989 | 48 | 1989 |
| Growth-temperature-dependent band alignment in quantum dots from photoluminescence spectroscopy M Larsson, A Elfving, WX Ni, GV Hansson, PO Holtz Physical Review B 73 (19), 195319, 2006 | 45 | 2006 |
| High‐resolution x‐ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers W Li, P Bergman, I Ivanov, WX Ni, H Amano, I Akasa Applied physics letters 69 (22), 3390-3392, 1996 | 44 | 1996 |
| Hall factor in strained p-type doped alloy Y Fu, KB Joelsson, KJ Grahn, WX Ni, GV Hansson, M Willander Physical Review B 54 (16), 11317, 1996 | 41 | 1996 |
| Strain and relaxation in Si-MBE structures studied by reciprocal space mapping using high resolution X-ray diffraction GV Hansson, HH Radamsson, WX Ni Journal of Materials Science: Materials in Electronics 6, 292-297, 1995 | 41 | 1995 |
