Mehmet Soyuer
Title
Cited by
Cited by
Year
A silicon 60-GHz receiver and transmitter chipset for broadband communications
SK Reynolds, BA Floyd, UR Pfeiffer, T Beukema, J Grzyb, C Haymes, ...
IEEE Journal of Solid-State Circuits 41 (12), 2820-2831, 2006
3882006
RF circuit design aspects of spiral inductors on silicon
JN Burghartz, DC Edelstein, M Soyuer, HA Ainspan, KA Jenkins
IEEE Journal of Solid-State Circuits 33 (12), 2028-2034, 1998
3561998
Microwave inductors and capacitors in standard multilevel interconnect silicon technology
JN Burghartz, M Soyuer, KA Jenkins
IEEE Transactions on Microwave Theory and Techniques 44 (1), 100-104, 1996
2991996
Method for designing high-Q inductors in silicon technology without expensive metalization
S Ponnapalli, M Soyuer, JF Ewen
US Patent 5,497,337, 1996
2531996
High-Q inductors in silicon technology without expensive metalization
JE Ewen, S Ponnapalli, M Soyuer
US Patent 5,446,311, 1995
2451995
Multilevel-spiral inductors using VLSI interconnect technology
JN Burghartz, KA Jenkins, M Soyuer
IEEE Electron device letters 17 (9), 428-430, 1996
2061996
Integrated RF and microwave components in BiCMOS technology
JN Burghartz, M Soyuer, KA Jenkins
IEEE Transactions on Electron Devices 43 (9), 1559-1570, 1996
1411996
Frequency limitations of a conventional phase-frequency detector
M Soyuer, RG Meyer
IEEE Journal of solid-state circuits 25 (4), 1019-1022, 1990
1121990
Multilevel monolithic inductors in silicon technology
M Soyuer, JN Burghartz, KA Jenkins, S Ponnapalli, JF Ewen, WE Pence
Electronics letters 31 (5), 359-360, 1995
1061995
Integrated RF components in a SiGe bipolar technology
JN Burghartz, M Soyuer, KA Jenkins, M Kies, M Dolan, KJ Stein, ...
IEEE Journal of Solid-State Circuits 32 (9), 1440-1445, 1997
991997
A 3-V 4-GHz nMOS voltage-controlled oscillator with integrated resonator
M Soyuer, KA Jenkins, JN Burghartz, MD Hulvey
IEEE Journal of Solid-State Circuits 31 (12), 2042-2045, 1996
951996
A fully-monolithic SiGe differential voltage-controlled oscillator for 5 GHz wireless applications
JO Plouchart, H Ainspan, M Soyuer, A Ruehli
2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of …, 2000
912000
High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier
JN Burghartz, M Soyuer, KA Jenkins, MD Hulvey
Proceedings of International Electron Devices Meeting, 1015-1018, 1995
891995
Two-level spiral inductor structure having a high inductance to area ratio
JN Burghartz, KA Jenkins, S Ponnapalli, M Soyuer
US Patent 5,656,849, 1997
861997
Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low-loss substrates
JN Burghartz, DC Edelstein, KA Jenkins, C Jahnes, C Uzoh, EJ O'Sullivan, ...
International Electron Devices Meeting. Technical Digest, 99-102, 1996
851996
A fully monolithic 1.25 GHz CMOS frequency synthesizer
M Soyuer, JF Ewen, HL Chuang
Proceedings of 1994 IEEE Symposium on VLSI Circuits, 127-128, 1994
811994
Novel substrate contact structure for high-Q silicon-integrated spiral inductors
JN Burghartz, AE Ruehli, KA Jenkins, M Soyuer, D Nguyen-Ngoc
International Electron Devices Meeting. IEDM Technical Digest, 55-58, 1997
781997
SiGe BiCMOS 3.3-V clock and data recovery circuits for 10-Gb/s serial transmission systems
M Meghelli, B Parker, H Ainspan, M Soyuer
IEEE Journal of Solid-State Circuits 35 (12), 1992-1995, 2000
742000
SiGe power HBT's for low-voltage, high-performance RF applications
JN Burghartz, JO Plouchart, KA Jenkins, CS Webster, M Soyuer
IEEE Electron Device Letters 19 (4), 103-105, 1998
721998
A 2.4-GHz silicon bipolar oscillator with integrated resonator
M Soyuer, KA Jenkins, JN Burghartz, HA Ainspan, FJ Canora, ...
IEEE Journal of Solid-State Circuits 31 (2), 268-270, 1996
651996
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Articles 1–20