| First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC X Yan, P Li, L Kang, SH Wei, B Huang Journal of Applied Physics 127 (8), 2020 | 38 | 2020 |
| First-principles study of defects in amorphous-SiO2/Si interfaces P Li, Z Chen, P Yao, F Zhang, J Wang, Y Song, X Zuo Applied Surface Science 483, 231-240, 2019 | 23 | 2019 |
| Computational study on interfaces and interface defects of amorphous silica and silicon P Li, Y Song, X Zuo physica status solidi (RRL)–Rapid Research Letters 13 (3), 1800547, 2019 | 21 | 2019 |
| Dissociation characteristics of proton release in a-SiO2 by first-principles theory Y Yue, P Li, Y Song, X Zuo Journal of Non-Crystalline Solids 486, 1-8, 2018 | 16 | 2018 |
| Defect engineering of second-harmonic generation in nonlinear optical semiconductors P Li, X Jiang, M Huang, L Kang, S Chen, A Gali, B Huang Cell Reports Physical Science 3 (11), 2022 | 9 | 2022 |
| Atomistic Mechanism of 4H- Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices P Dong, P Li, L Zhang, H Tan, Z Hu, K Zhou, Z Li, X Yu, J Li, B Huang Physical Review Applied 15 (3), 034007, 2021 | 9 | 2021 |
| A comparable study of defect diffusion and recombination in Si and GaN XR Han, Y Li, P Li, XL Yan, XQ Wu, B Huang Journal of Applied Physics 132 (4), 2022 | 2 | 2022 |
| Electronic and doping properties of hexagonal silicon carbide with stacking faults induced cubic inclusions P Li, X Yan, J Chen, P Dong, B Huang Journal of Applied Physics 129 (23), 2021 | 2 | 2021 |
| Carbon cluster emitters in silicon carbide P Li, P Udvarhelyi, S Li, B Huang, A Gali Physical Review B 108 (8), 085201, 2023 | 1 | 2023 |
| Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences S Li, A Pershin, P Li, A Gali npj 2D Materials and Applications 8 (1), 16, 2024 | | 2024 |
| Intermediate ground states of hydrogen in : A first-principles study X Han, P Li, X Sui, H Jin, F Luo, L Qiao, B Huang Physical Review B 108 (16), 165145, 2023 | | 2023 |
| Solid state defect emitters with no electrical activity P Li, S Li, P Udvarhelyi, B Huang, A Gali arXiv preprint arXiv:2310.09849, 2023 | | 2023 |
| Ab initio calculation of silicon monovacancy defect in amorphous-SiO2/Si interface P Yao, Y Song, P Li, X Zuo AIP Advances 12 (5), 2022 | | 2022 |
