Salvatore Maria Amoroso
Salvatore Maria Amoroso
University of Glasgow - Gold Standard Simulations Ltd
Verified email at goldstandardsimulations.com - Homepage
TitleCited byYear
Variability aware simulation based design-technology cooptimization (DTCO) flow in 14 nm FinFET/SRAM cooptimization
A Asenov, B Cheng, X Wang, AR Brown, C Millar, C Alexander, ...
IEEE Transactions on Electron Devices 62 (6), 1682-1690, 2014
342014
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review
L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ...
Microelectronics Reliability 54 (4), 682-697, 2014
312014
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state
SM Amoroso, CM Compagnoni, A Ghetti, L Gerrer, AS Spinelli, AL Lacaita, ...
IEEE Electron Device Letters 34 (5), 683-685, 2013
302013
Comprehensive investigation of statistical effects in nitride memories—Part I: Physics-based modeling
A Mauri, CM Compagnoni, SM Amoroso, A Maconi, A Ghetti, AS Spinelli, ...
IEEE Transactions on Electron Devices 57 (9), 2116-2123, 2010
292010
Physical modeling for programming of TANOS memories in the Fowler–Nordheim regime
CM Compagnoni, A Mauri, SM Amoroso, A Maconi, AS Spinelli
IEEE transactions on electron devices 56 (9), 2008-2015, 2009
262009
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs
F Adamu-Lema, CM Compagnoni, SM Amoroso, N Castellani, L Gerrer, ...
IEEE Transactions on Electron Devices 60 (2), 833-839, 2012
242012
Impact of nonuniform doping on random telegraph noise in flash memory devices
A Ghetti, SM Amoroso, A Mauri, CM Compagnoni
IEEE Transactions on Electron Devices 59 (2), 309-315, 2011
222011
3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET
L Gerrer, SM Amoroso, S Markov, F Adamu-Lema, A Asenov
IEEE Transactions on Electron Devices 60 (12), 4008-4013, 2013
212013
Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology
L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013
202013
Three-dimensional simulation of charge-trap memory programming—Part I: Average behavior
SM Amoroso, A Maconi, A Mauri, CM Compagnoni, AS Spinelli, ...
IEEE Transactions on Electron Devices 58 (7), 1864-1871, 2011
202011
Simulation study of the impact of quantum confinement on the electrostatically driven performance of n-type nanowire transistors
Y Wang, T Al-Ameri, X Wang, VP Georgiev, E Towie, SM Amoroso, ...
IEEE Transactions on Electron Devices 62 (10), 3229-3236, 2015
192015
Semi-analytical model for the transient operation of gate-all-around charge-trap memories
SM Amoroso, CM Compagnoni, A Mauri, A Maconi, AS Spinelli, ...
IEEE Transactions on Electron Devices 58 (9), 3116-3123, 2011
192011
Problems with the continuous doping TCAD simulations of decananometer CMOS transistors
A Asenov, F Adamu-Lema, X Wang, SM Amoroso
IEEE Transactions on Electron Devices 61 (8), 2745-2751, 2014
182014
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov
Solid-State Electronics 84, 120-126, 2013
182013
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D ‘atomistic’simulation
SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
182012
Comprehensive investigation of statistical effects in nitride memories—Part II: Scaling analysis and impact on device performance
CM Compagnoni, A Mauri, SM Amoroso, A Maconi, E Greco, AS Spinelli, ...
IEEE Transactions on Electron Devices 57 (9), 2124-2131, 2010
182010
Impact of cell shape on random telegraph noise in decananometer flash memories
SM Amoroso, A Ghetti, AR Brown, A Mauri, CM Compagnoni, A Asenov
IEEE Transactions on Electron Devices 59 (10), 2774-2779, 2012
172012
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories
SM Amoroso, A Maconi, A Mauri, CM Compagnoni, E Greco, E Camozzi, ...
2010 International Electron Devices Meeting, 22.6. 1-22.6. 4, 2010
172010
A new physics-based model for TANOS memories program/erase
A Mauri, CM Compagnoni, S Amoroso, A Maconi, F Cattaneo, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
162008
Reliability constraints for TANOS memories due to alumina trapping and leakage
SM Amoroso, A Mauri, N Galbiati, C Scozzari, E Mascellino, E Camozzi, ...
2010 IEEE International Reliability Physics Symposium, 966-969, 2010
152010
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Articles 1–20