| Origin of incremental step pulse programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash K Nam, C Park, JS Yoon, H Jang, MS Park, J Sim, RH Baek Solid-State Electronics 175, 107930, 2021 | 15 | 2021 |
| Channel thickness and grain size engineering for improvement of variability and performance in 3-D NAND flash memory K Nam, C Park, JS Yoon, G Yang, MS Park, RH Baek IEEE Transactions on Electron Devices 69 (7), 3681-3687, 2022 | 8 | 2022 |
| Holistic optimization of trap distribution for performance/reliability in 3-D NAND flash using machine learning K Nam, C Park, H Yun, JS Yoon, H Jang, K Cho, MS Park, HC Choi, ... IEEE Access 11, 7135-7144, 2023 | 6 | 2023 |
| Bi-directional long short-term memory neural network modeling of data retention characterization in 3-D triple-level cell NAND flash memory H Jang, C Park, K Nam, H Yun, K Cho, JS Yoon, HC Choi, HJ Kang, ... IEEE Transactions on Electron Devices 69 (8), 4241-4247, 2022 | 4 | 2022 |
| Quantitative analysis of irregular channel shape effects on charge-trapping efficiency using massive 3D NAND data C Park, JS Yoon, K Nam, H Jang, MS Park, RH Baek Materials Science in Semiconductor Processing 157, 107333, 2023 | 3 | 2023 |
| Forward body bias technique in DRAM peripheral transistor at cryogenic temperature for quantum computing applications H You, J An, K Nam, B Kang, J Park, N Lee, S Lee, RH Baek 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 2 | 2023 |
| Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Vth Window in 3D NAND Flash Using a Machine-Learning Method K Nam, C Park, JS Yoon, H Yun, H Jang, K Cho, HJ Kang, MS Park, J Sim, ... Nanomaterials 12 (11), 1808, 2022 | 2 | 2022 |
| Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell K Cho, H Yun, K Nam, C Park, H Jang, JS Yoon, HC Choi, MS Park, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Improved ISPP scheme for narrow threshold voltage distribution in 3-D NAND flash memory G Yang, C Park, K Nam, D Kim, MS Park, RH Baek Solid-State Electronics 202, 108607, 2023 | 1 | 2023 |
| Extraction of device structural parameters through DC/AC performance using an MLP neural network algorithm H Jang, H Yun, C Park, K Cho, K Nam, JS Yoon, HC Choi, RH Baek IEEE Access 10, 64408-64419, 2022 | 1 | 2022 |
| Analysis of mechanical stress on Fowler-Nordheim tunneling for program operation in 3D NAND flash memory D Kim, K Nam, C Park, H You, MS Park, Y Kim, S Park, RH Baek Solid-State Electronics, 108927, 2024 | | 2024 |
| Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Channel-Array Transistor for Quantum Computing Applications H You, K Nam, J An, C Park, D Kim, S Lee, N Lee, RH Baek IEEE Access, 2024 | | 2024 |
| Bidirectional Precharge and Negative Bias Scheme for Program Disturbance Suppression in 3-D NAND Flash Memory K Nam, C Park, D Kim, S Lee, N Lee, RH Baek IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Optimization of Process Parameters on Short-Term Retention for Charge-Trapping 3-D nand Flash Memories Using Novel Neural Networks Approach H Jang, K Nam, H Yun, K Cho, S Eom, MS Park, RH Baek IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps C Park, JS Yoon, K Nam, H Jang, M Park, RH Baek Nanomaterials 13 (9), 1451, 2023 | | 2023 |
| Improving Program Efficiency of 3D NAND Cell Structure Based on Artificial Neural Network K Cho, H Yun, H Jang, K Nam, C Park, JS Yoon, HC Choi, RH Baek 대한전자공학회 학술대회, 70-75, 2021 | | 2021 |
