| Atomically precise placement of single dopants in Si SR Schofield, NJ Curson, MY Simmons, FJ Rueß, T Hallam, L Oberbeck, ... Physical review letters 91 (13), 136104, 2003 | 461 | 2003 |
| Towards the fabrication of phosphorus qubits for a silicon quantum computer JL O’Brien, SR Schofield, MY Simmons, RG Clark, AS Dzurak, NJ Curson, ... Physical Review B 64 (16), 161401, 2001 | 260 | 2001 |
| Prevention of pulmonary embolism and deep vein thrombosis with low dose aspirin: Pulmonary Embolism Prevention (PEP) trial J O'Brien, H Duncan, G Kirsh, V Allen, P King, R Hargraves, L Mendes, ... Lancet 355 (9212), 2000 | 244 | 2000 |
| Toward atomic-scale device fabrication in silicon using scanning probe microscopy FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ... Nano Letters 4 (10), 1969-1973, 2004 | 198 | 2004 |
| Quantum engineering at the silicon surface using dangling bonds SR Schofield, P Studer, CF Hirjibehedin, NJ Curson, G Aeppli, DR Bowler Nature communications 4 (1), 1-7, 2013 | 175 | 2013 |
| Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer L Oberbeck, NJ Curson, MY Simmons, R Brenner, AR Hamilton, ... Applied physics letters 81 (17), 3197-3199, 2002 | 114 | 2002 |
| Progress in silicon-based quantum computing RG Clark, R Brenner, TM Buehler, V Chan, NJ Curson, AS Dzurak, ... Philosophical Transactions of the Royal Society of London. Series A …, 2003 | 93 | 2003 |
| Phosphine dissociation on the Si (001) surface HF Wilson, O Warschkow, NA Marks, SR Schofield, NJ Curson, PV Smith, ... Physical review letters 93 (22), 226102, 2004 | 79 | 2004 |
| Charge density waves in the graphene sheets of the superconductor CaC6 KC Rahnejat, CA Howard, NE Shuttleworth, SR Schofield, K Iwaya, ... Nature communications 2 (1), 1-6, 2011 | 69 | 2011 |
| Thermal dissociation and desorption of P H 3 on Si (001): A reinterpretation of spectroscopic data HF Wilson, O Warschkow, NA Marks, NJ Curson, SR Schofield, ... Physical Review B 74 (19), 195310, 2006 | 65 | 2006 |
| Nondestructive imaging of atomically thin nanostructures buried in silicon G Gramse, A Kölker, T Lim, TJZ Stock, H Solanki, SR Schofield, ... Science advances 3 (6), e1602586, 2017 | 60 | 2017 |
| Scanning probe microscopy for silicon device fabrication MY Simmons, FJ Ruess, KEJ Goh, T Hallam, SR Schofield, L Oberbeck, ... Molecular Simulation 31 (6-7), 505-515, 2005 | 54 | 2005 |
| STM characterization of the Si-P heterodimer NJ Curson, SR Schofield, MY Simmons, L Oberbeck, JL O’brien, RG Clark Physical Review B 69 (19), 195303, 2004 | 53 | 2004 |
| Phosphine adsorption and dissociation on the Si (001) surface: An ab initio survey of structures O Warschkow, HF Wilson, NA Marks, SR Schofield, NJ Curson, PV Smith, ... Physical Review B 72 (12), 125328, 2005 | 52 | 2005 |
| Water on silicon (001): C defects and initial steps of surface oxidation O Warschkow, SR Schofield, NA Marks, MW Radny, PV Smith, ... Physical Review B 77 (20), 201305, 2008 | 43 | 2008 |
| Valence surface electronic states on Ge (001) MW Radny, GA Shah, SR Schofield, PV Smith, NJ Curson Physical review letters 100 (24), 246807, 2008 | 40 | 2008 |
| Imaging charged defects on clean with scanning tunneling microscopy GW Brown, H Grube, ME Hawley, SR Schofield, NJ Curson, MY Simmons, ... Journal of applied physics 92 (2), 820-824, 2002 | 39 | 2002 |
| Phosphine dissociation and diffusion on Si (001) observed at the atomic scale SR Schofield, NJ Curson, O Warschkow, NA Marks, HF Wilson, ... The Journal of Physical Chemistry B 110 (7), 3173-3179, 2006 | 38 | 2006 |
| Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy K Sinthiptharakoon, SR Schofield, P Studer, V Brázdová, CF Hirjibehedin, ... Journal of Physics: Condensed Matter 26 (1), 012001, 2013 | 37 | 2013 |
| Split-off dimer defects on the surface SR Schofield, NJ Curson, JL O’brien, MY Simmons, RG Clark, NA Marks, ... Physical Review B 69 (8), 085312, 2004 | 36 | 2004 |
