| Anomalous modulation of a zero-bias peak in a hybrid nanowire-superconductor device ADK Finck, DJ Van Harlingen, PK Mohseni, K Jung, X Li Physical review letters 110 (12), 126406, 2013 | 843 | 2013 |
| Understanding self-aligned planar growth of InAs nanowires Y Zi, K Jung, D Zakharov, C Yang Nano letters 13 (6), 2786-2791, 2013 | 66 | 2013 |
| Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors A Razavieh, PK Mohseni, K Jung, S Mehrotra, S Das, S Suslov, X Li, ... ACS nano 8 (6), 6281-6287, 2014 | 32 | 2014 |
| Hybrid Integration of n-MoS2/p-GaN Diodes by Quasi-van der Waals Epitaxy C Liu, H Huang, W Choi, J Kim, K Jung, W Sun, N Tansu, W Zhou, H Kuo, ... ACS Applied Electronic Materials 2 (2), 419-425, 2020 | 18 | 2020 |
| Ultrathin InAs nanowire growth by spontaneous Au nanoparticle spreading on indium-rich surfaces K Jung, PK Mohseni, X Li Nanoscale 6 (24), 15293-15300, 2014 | 16 | 2014 |
| Semiconductor device HJ Lim, KN Kim, HS Jung, KH Jung, KH Hwang US Patent 11,322,578, 2022 | 9 | 2022 |
| Semiconductor memory device and method of fabricating the same J Kyooho, Y Kim, YL Park, S Jeong-Gyu, SH Ahn, AN Changmu US Patent 11,133,314, 2021 | 6 | 2021 |
| Capacitor structure ES Kim, SY Kang, J Kyoo-Ho, KH Cho, H Mun US Patent 11,088,240, 2021 | 5 | 2021 |
| Semiconductor device and method of manufacturing the same S Jeonggyu, J Kyooho, Y Kim, B Jeongil, J Lee, KIM Junghwa, ... US Patent 10,867,784, 2020 | 5 | 2020 |
| Semiconductor device H Mun, SY Kang, ES Kim, YL Park, J Kyoo-Ho, KH Cho US Patent App. 16/539,454, 2020 | 5 | 2020 |
| Semiconductor device and method of manufacturing the same J Kyooho, K Sangyeol, K Cho, E Kim, MUN Hyosik US Patent 10,854,709, 2020 | 4 | 2020 |
| Large area MoS2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS2/p-InGaN diode K Jung, CY Liu, JD Kim, W Choi, W Zhou, HC Kuo, X Li 2016 IEEE Photonics Conference (IPC), 657-658, 2016 | 4 | 2016 |
| Method of manufacturing metal nitride film and electronic device including metal nitride film S Jeonggyu, J Kyooho, Y Kim, KIM Haeryong, J Lee US Patent 11,424,317, 2022 | 2 | 2022 |
| Semiconductor memory devices and methods of fabricating the same J Kyooho, S Jeong-Gyu, Y Kim, J Lee US Patent 11,239,239, 2022 | 2 | 2022 |
| Semiconductor memory devices and methods of fabricating the same J Kyooho, S Jeong-Gyu, Y Kim, J Lee US Patent App. 17/407,836, 2021 | 2 | 2021 |
| Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device Y Kim, KIM Haeryong, S Ryu, S Moon, S Jeonggyu, WOO Changsu, ... US Patent 11,081,338, 2021 | 2 | 2021 |
| Capacitor structure, semiconductor memory device including the same, method for fabricating the same, and method for fabricating semiconductor memory device including the same KH Jung, SY Kang, SH Kim, DK Baek, YK Shin, WS Choi US Patent App. 17/567,316, 2023 | 1 | 2023 |
| Semiconductor device YL Park, SH Ahn, SY Kang, CM An, KH Jung US Patent 11,527,604, 2022 | 1 | 2022 |
| Integrated circuit device and method of manufacturing the same J Kyooho, S Jeonggyu, Y Kim, J Lee US Patent 11,227,912, 2022 | 1 | 2022 |
| Semiconductor device and method of fabricating the same YL Park, SH Ahn, SY Kang, CM An, KH Jung US Patent 11,069,768, 2021 | 1 | 2021 |
