Hesameddin Ilatikhameneh
Hesameddin Ilatikhameneh
Samsung Research
Verifierad e-postadress på samsung.com
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Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials
H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
1682015
Electrically Tunable Bandgaps in Bilayer MoS2
T Chu, H Ilatikhameneh, G Klimeck, R Rahman, Z Chen
Nano letters 15 (12), 8000-8007, 2015
1392015
Efficient and realistic device modeling from atomic detail to the nanoscale
JE Fonseca, T Kubis, M Povolotskyi, B Novakovic, A Ajoy, G Hegde, ...
Journal of Computational Electronics 12 (4), 592-600, 2013
1102013
Few-layer phosphorene: An ideal 2D material for tunnel transistors
TA Ameen, H Ilatikhameneh, G Klimeck, R Rahman
Scientific reports 6 (1), 1-7, 2016
892016
Polarization-engineered III-nitride heterojunction tunnel field-effect transistors
W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
802015
Dielectric engineered tunnel field-effect transistor
H Ilatikhameneh, TA Ameen, G Klimeck, J Appenzeller, R Rahman
IEEE Electron Device Letters 36 (10), 1097-1100, 2015
762015
Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass
H Ilatikhameneh, T Ameen, N Bozidar, Y Tan, G Klimeck, R Rahman
Scientific Reports 6 (doi:10.1038/srep31501), 31501, 2016
632016
Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures
C Zheng, Q Zhang, B Weber, H Ilatikhameneh, F Chen, H Sahasrabudhe, ...
ACS nano 11 (3), 2785-2793, 2017
612017
Understanding contact gating in Schottky barrier transistors from 2D channels
A Prakash, H Ilatikhameneh, P Wu, J Appenzeller
Scientific reports 7 (1), 1-9, 2017
532017
Complementary black phosphorus tunneling field-effect transistors
P Wu, T Ameen, H Zhang, LA Bendersky, H Ilatikhameneh, G Klimeck, ...
ACS nano 13 (1), 377-385, 2018
502018
Thickness engineered tunnel field-effect transistors based on phosphorene
FW Chen, H Ilatikhameneh, TA Ameen, G Klimeck, R Rahman
IEEE Electron Device Letters 38 (1), 130-133, 2016
482016
Optimum high-k oxide for the best performance of ultra-scaled double-gate MOSFETs
M Salmani-Jelodar, H Ilatikhameneh, S Kim, K Ng, P Sarangapani, ...
IEEE Transactions on Nanotechnology 15 (6), 904-910, 2016
482016
Scaling theory of electrically doped 2D transistors
H Ilatikhameneh, G Klimeck, J Appenzeller, R Rahman
IEEE Electron Device Letters 36 (7), 726-728, 2015
452015
Can homojunction tunnel FETs scale below 10 nm?
H Ilatikhameneh, G Klimeck, R Rahman
IEEE Electron Device Letters 37 (1), 115-118, 2015
41*2015
Design guidelines for sub-12 nm nanowire MOSFETs
M Salmani-Jelodar, SR Mehrotra, H Ilatikhameneh, G Klimeck
IEEE Transactions on Nanotechnology 14 (2), 210-213, 2015
392015
Configurable electrostatically doped high performance bilayer graphene tunnel FET
FW Chen, H Ilatikhameneh, G Klimeck, Z Chen, R Rahman
IEEE Journal of the Electron Devices Society 4 (3), 124-128, 2016
382016
From Fowler–Nordheim to nonequilibrium Green’s function modeling of tunneling
H Ilatikhameneh, RB Salazar, G Klimeck, R Rahman, J Appenzeller
IEEE Transactions on Electron Devices 63 (7), 2871-2878, 2016
332016
A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations
RB Salazar, H Ilatikhameneh, R Rahman, G Klimeck, J Appenzeller
Journal of Applied Physics 118 (16), 164305, 2015
29*2015
Design rules for high performance tunnel transistors from 2-D materials
H Ilatikhameneh, G Klimeck, J Appenzeller, R Rahman
IEEE Journal of the Electron Devices Society 4 (5), 260-265, 2016
232016
Switching Mechanism and the Scalability of vertical-TFETs
F Chen, H Ilatikhameneh, Y Tan, G Klimeck, R Rahman
IEEE Transactions on Electron Devices 65 (7), 3065-3068, 2018
222018
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