| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018 | 297 | 2018 |
| Design and fabrication of planar guard ring termination for high-voltage SiC diodes DC Sheridan, G Niu, JN Merrett, JD Cressler, C Ellis, CC Tin Solid-State Electronics 44 (8), 1367-1372, 2000 | 144 | 2000 |
| Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications JB Johnson, AJ Joseph, DC Sheridan, RM Maladi, PO Brandt, J Persson, ... IEEE journal of solid-state circuits 39 (10), 1605-1614, 2004 | 86 | 2004 |
| Design of single and multiple zone junction termination extension structures for SiC power devices DC Sheridan, G Niu, JD Cressler Solid-State Electronics 45 (9), 1659-1664, 2001 | 78 | 2001 |
| 4H-SiC power devices for use in power electronic motor control JB Casady, AK Agarwal, S Seshadri, RR Siergiej, LB Rowland, ... Solid-State Electronics 42 (12), 2165-2176, 1998 | 73 | 1998 |
| Improved two-stage DC-coupled gate driver for enhancement-mode SiC JFET R Kelley, A Ritenour, D Sheridan, J Casady 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and …, 2010 | 68 | 2010 |
| A physics-based model for a SiC JFET accounting for electric-field-dependent mobility E Platania, Z Chen, F Chimento, AE Grekov, R Fu, L Lu, A Raciti, ... IEEE Transactions on Industry Applications 47 (1), 199-211, 2010 | 62 | 2010 |
| Proton radiation effects in 4H-SiC diodes and MOS capacitors Z Luo, T Chen, AC Ahyi, AK Sutton, BM Haugerud, JD Cressler, ... IEEE transactions on nuclear science 51 (6), 3748-3752, 2004 | 61 | 2004 |
| Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA) X Huang, DY Lee, V Bondarenko, A Baker, DC Sheridan, AQ Huang, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 60 | 2014 |
| Record 2.8mΩ-cm21.9kV enhancement-mode SiC VJFETs DC Sheridan, A Ritenour, V Bondarenko, P Burks, JB Casady 2009 21st International Symposium on Power Semiconductor Devices & IC's, 335-338, 2009 | 57 | 2009 |
| Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching System JB Casady, ED Luckowski, M Bozack, D Sheridan, RW Johnson, ... Journal of the Electrochemical Society 143 (5), 1750, 1996 | 52 | 1996 |
| The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/interface DC Sheridan, G Chung, S Clark, JD Cressler IEEE Transactions on Nuclear Science 48 (6), 2229-2232, 2001 | 50 | 2001 |
| Ultra-low loss 600V-1200V GaN power transistors for high efficiency applications DC Sheridan, DY Lee, A Ritenour, V Bondarenko, J Yang, C Coleman PCIM Europe 2014; International Exhibition and Conference for Power …, 2014 | 45 | 2014 |
| Impact of proton irradiation on the static and dynamic characteristics of high-voltage 4H-SiC JBS switching diodes Z Luo, T Chen, JD Cressler, DC Sheridan, JR Williams, RA Reed, ... IEEE transactions on nuclear science 50 (6), 1821-1826, 2003 | 40 | 2003 |
| International COVID-19 Parental Attitude Study (COVIPAS) Group. Caregiver willingness to vaccinate their children against COVID-19: cross sectional survey RD Goldman, TD Yan, M Seiler, C Parra Cotanda, JC Brown, EJ Klein, ... Vaccine 38 (48), 7668-73, 2020 | 39 | 2020 |
| Normally-off SiC VJFETs for 800 V and 1200 V power switching applications I Sankin, DC Sheridan, W Draper, V Bondarenko, R Kelley, MS Mazzola, ... 2008 20th International Symposium on Power Semiconductor Devices and IC's …, 2008 | 39 | 2008 |
| Power factor correction using an enhancement-mode SiC JFET RL Kelley, M Mazzola, S Morrison, W Draper, I Sankin, D Sheridan, ... 2008 IEEE Power Electronics Specialists Conference, 4766-4769, 2008 | 38 | 2008 |
| Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies DL Harame, KM Newton, R Singh, SL Sweeney, SE Strang, JB Johnson, ... IBM Journal of Research and Development 47 (2.3), 139-175, 2003 | 37 | 2003 |
| Time-dependent dielectric breakdown of commercial 1.2 kV 4H-SiC power MOSFETs T Liu, S Zhu, MH White, A Salemi, D Sheridan, AK Agarwal IEEE Journal of the Electron Devices Society 9, 633-639, 2021 | 35 | 2021 |
| Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making DC Sheridan, A Ritenour US Patent 7,994,548, 2011 | 33 | 2011 |
