Sebastian Lourdudoss
Sebastian Lourdudoss
Verifierad e-postadress på kth.se
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Citeras av
30GHz direct modulation bandwidth indetuned loaded InGaAsP DBR lasers at1. 55 μm wavelength
O Kjebon, R Schatz, S Lourdudoss, S Nilsson, B Stålnacke, L Bäckbom
Electronics Letters 33, 488-489, 1997
Heteroepitaxy and selective area heteroepitaxy for silicon photonics
S Lourdudoss
Current Opinion in Solid State and Materials Science 16 (2), 91-99, 2012
Hydride vapor phase epitaxy revisited
S Lourdudoss, O Kjebon
IEEE Journal of Selected Topics in Quantum Electronics 3 (3), 749-767, 1997
Monolithically integrated InP-based photonic chip development for O-CDMA systems
C Ji, RG Broeke, Y Du, J Cao, N Chubun, P Bjeletich, F Olsson, ...
IEEE Journal of Selected Topics in Quantum Electronics 11 (1), 66-77, 2005
Quantized conductance in a heterostructurally defined quantum wire
P Ramvall, N Carlsson, I Maximov, P Omling, L Samuelson, W Seifert, ...
Applied physics letters 71 (7), 918-920, 1997
Gigabit free-space multi-level signal transmission with a mid-infrared quantum cascade laser operating at room temperature
X Pang, O Ozolins, R Schatz, J Storck, A Udalcovs, JR Navarro, A Kakkar, ...
Optics letters 42 (18), 3646-3649, 2017
III–Vs on Si for photonic applications—A monolithic approach
Z Wang, C Junesand, W Metaferia, C Hu, L Wosinski, S Lourdudoss
Materials Science and Engineering: B 177 (17), 1551-1557, 2012
Free‐space communications enabled by quantum cascade lasers
X Pang, O Ozolins, L Zhang, R Schatz, A Udalcovs, X Yu, G Jacobsen, ...
physica status solidi (a) 218 (3), 2000407, 2021
Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer
F Olsson, M Xie, S Lourdudoss, I Prieto, PA Postigo
Journal of Applied Physics 104 (9), 2008
Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs
O Kjebon, R Schatz, S Lourdudoss, S Nilsson, B Stalnacke
High-Speed Semiconductor Laser Sources 2684, 138-152, 1996
Active photonic device
C Junesand, S Lourdudoss
US Patent 8,290,014, 2012
Monolithic InP 100-Channel 10-GHz Device for Optical Arbitrary Waveform Generation
FM Soares, NK Fontaine, RP Scott, JH Baek, X Zhou, T Su, S Cheung, ...
IEEE Photonics Journal 3 (6), 975-985, 2011
Anomalous k-dependent spin splitting in wurtzite Al x Ga 1− x N∕ Ga N heterostructures
I Lo, MH Gau, JK Tsai, YL Chen, ZJ Chang, WT Wang, JC Chiang, ...
Physical Review B 75 (24), 245307, 2007
Electron and hole capture cross-sections of Fe acceptors in GaN: Fe epitaxially grown on sapphire
T Aggerstam, A Pinos, S Marcinkevičius, M Linnarsson, S Lourdudoss
Journal of electronic materials 36, 1621-1624, 2007
Bridging the terahertz gap: Photonics-assisted free-space communications from the submillimeter-wave to the mid-infrared
X Pang, O Ozolins, S Jia, L Zhang, R Schatz, A Udalcovs, V Bobrovs, ...
Journal of Lightwave Technology 40 (10), 3149-3162, 2022
An investigation on hydride VPE growth and properties of semi-insulating InP: Fe
S Lourdudoss, B Hammarlund, O Kjebon
Journal of electronic materials 19, 981-987, 1990
Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire
T Aggerstam, S Lourdudoss, HH Radamson, M Sjödin, P Lorenzini, ...
Thin Solid Films 515 (2), 705-707, 2006
Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers
K Streubel, J Wallin, G Landgren, U Öhlander, S Lourdudoss, O Kjebon
Journal of crystal growth 143 (1-2), 7-14, 1994
1.55 μm buried heterostructure laser via regrowth of semi‐insulating InP: Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen
O Kjebon, S Lourdudoss, B Hammarlund, S Lindgren, M Rask, P Ojala, ...
Applied physics letters 59 (3), 253-255, 1991
Simple epitaxial lateral overgrowth process as a strategy for photonic integration on silicon
H Kataria, W Metaferia, C Junesand, C Zhang, N Julian, JE Bowers, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 380-386, 2013
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