| Write and erase threshold voltage interdependence in resistive switching memory cells G Ghosh, MK Orlowski IEEE transactions on Electron Devices 62 (9), 2850-2856, 2015 | 29 | 2015 |
| Beyond the highs and lows: A perspective on the future of dielectrics research for nanoelectronic devices M Jenkins, DZ Austin, JF Conley, J Fan, CH De Groot, L Jiang, Y Fan, ... ECS Journal of Solid State Science and Technology 8 (11), N159, 2019 | 25 | 2019 |
| Correlation between set and reset voltages in resistive RAM cells G Ghosh, MK Orlowski Current Applied Physics 15 (10), 1124-1129, 2015 | 19 | 2015 |
| Role of CMOS back-end metals as active electrodes for resistive switching in ReRAM cells G Ghosh, Y Kang, SW King, M Orlowski ECS Journal of Solid State Science and Technology 6 (1), N1, 2016 | 11 | 2016 |
| Multilevel Resistive Switching with Oxygen Vacancy Filaments in Pt/TaOx/Cu and Pt/TaOx/Pt Devices Y Kang, G Ghosh, MK Orlowski ECS Transactions 69 (3), 37, 2015 | 3 | 2015 |
| Dependence of SET, RESET and breakdown voltages of a MIM Resistive memory device on the input voltage waveform G Ghosh Virginia Tech, 2015 | 2 | 2015 |
| Method to Manufacture Highly Conductive Vias and PROM Memory Cells by Application of Electric Pulses M Orlowski, G Ghosh, A Verma US Patent App. 16/168,678, 2019 | 1 | 2019 |
| Method to Manufacture Highly Conductive Vias and PROM Memory Cells by Application of Electric Pulses M Orlowski, G Ghosh, A Verma US Patent App. 15/365,445, 2017 | 1 | 2017 |
| Set and Reset Voltage Interdependence in Resistive Switching Memory Cells G Ghosh, MK Orlowski ECS Transactions 69 (3), 57, 2015 | | 2015 |
Prof. Dr. Marius OrlowskiVirginia Tech, Bradly Department of Electrical and Computer EngineeeringVerifierad e-postadress på vt.edu
