ana bengoechea
ana bengoechea
Doctor, Universiad Politecnica Madrid
Verifierad e-postadress på isom.upm.es
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Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
A Bengoechea-Encabo, F Barbagini, S Fernandez-Garrido, J Grandal, ...
Journal of crystal growth 325 (1), 89-92, 2011
1022011
Selective area growth of In (Ga) N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si (111): from ultraviolet to infrared emission
S Albert, A Bengoechea-Encabo, MA Sanchez-Garcia, X Kong, ...
Nanotechnology 24 (17), 175303, 2013
562013
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
S Albert, A Bengoechea-Encabo, X Kong, MA Sanchez-Garcia, E Calleja, ...
Applied Physics Letters 102 (18), 181103, 2013
442013
Selective area growth of a-and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
A Bengoechea-Encabo, S Albert, MA Sanchez-Garcia, LL López, ...
Journal of crystal growth 353 (1), 1-4, 2012
442012
Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
S Albert, A Bengoechea-Encabo, P Lefebvre, F Barbagini, ...
Applied Physics Letters 100 (23), 231906, 2012
392012
Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si (111) substrates
S Albert, A Bengoechea-Encabo, P Lefebvre, MA Sanchez-Garcia, ...
Applied Physics Letters 99 (13), 131108, 2011
392011
Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
S Albert, A Bengoechea-Encabo, MA Sanchez-Garcia, E Calleja, U Jahn
Journal of Applied Physics 113 (11), 114306, 2013
312013
Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage
AB Encabo, J Howgate, M Stutzmann, M Eickhoff, MA Sánchez-García
Sensors and Actuators B: Chemical 142 (1), 304-307, 2009
292009
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
Ž Gačević, N Vukmirović, N García-Lepetit, A Torres-Pardo, M Müller, ...
Physical Review B 93 (12), 125436, 2016
262016
Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In, Ga) N/GaN nanowires
X Kong, S Albert, A Bengoechea-Encabo, MA Sanchez-Garcia, E Calleja, ...
Nanotechnology 23 (48), 485701, 2012
262012
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
T Brazzini, A Bengoechea-Encabo, MA Sánchez-García, F Calle
Sensors and Actuators B: Chemical 176, 704-707, 2013
252013
Crystallographically uniform arrays of ordered (In) GaN nanocolumns
Ž Gačević, A Bengoechea-Encabo, S Albert, A Torres-Pardo, ...
Journal of Applied Physics 117 (3), 035301, 2015
222015
Light-emitting-diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
A Bengoechea-Encabo, S Albert, D Lopez-Romero, P Lefebvre, ...
Nanotechnology 25 (43), 435203, 2014
222014
Demonstration of (In, Ga) N/GaN core–shell micro light-emitting diodes grown by molecular beam epitaxy on ordered MOVPE GaN pillars
S Albert, A Bengoechea-Encabo, J Ledig, T Schimpke, ...
Crystal Growth & Design 15 (8), 3661-3665, 2015
182015
Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates
A Bengoechea-Encabo, S Albert, J Zuniga-Perez, P de Mierry, A Trampert, ...
Applied Physics Letters 103 (24), 241905, 2013
182013
Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns
F Barbagini, A Bengoechea-Encabo, S Albert, J Martinez, MAS García, ...
Nanoscale research letters 6 (1), 1-9, 2011
182011
InN/InGaN multiple quantum wells emitting at grown by molecular beam epitaxy
J Grandal, J Pereiro, A Bengoechea-Encabo, S Fernandez-Garrido, ...
Applied Physics Letters 98 (6), 061901, 2011
182011
Lattice pulling effect and strain relaxation in axial (In, Ga) N/GaN nanowire heterostructures grown on GaN‐buffered Si (111) substrate
X Kong, S Albert, A Bengoechea‐Encabo, MA Sanchez‐Garcia, E Calleja, ...
physica status solidi (a) 212 (4), 736-739, 2015
152015
Titanium induced polarity inversion in ordered (In, Ga) N/GaN nanocolumns
X Kong, H Li, S Albert, A Bengoechea-Encabo, MA Sanchez-Garcia, ...
Nanotechnology 27 (6), 065705, 2016
142016
Correlation among growth conditions, morphology, and optical properties of nanocolumnar InGaN/GaN heterostructures selectively grown by molecular beam epitaxy
S Albert, A Bengoechea-Encabo, X Kong, MA Sanchez-Garcia, ...
Crystal Growth & Design 15 (6), 2661-2666, 2015
142015
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