| Rethinking phonons: The issue of disorder HR Seyf, L Yates, TL Bougher, S Graham, BA Cola, T Detchprohm, MH Ji, ... npj Computational Materials 3 (1), 49, 2017 | 100 | 2017 |
| Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers S Choi, MH Ji, J Kim, H Jin Kim, MM Satter, PD Yoder, JH Ryou, ... Applied Physics Letters 101 (16), 2012 | 96 | 2012 |
| Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions J Kim, Z Lochner, MH Ji, S Choi, HJ Kim, JS Kim, RD Dupuis, AM Fischer, ... Journal of Crystal Growth 388, 143-149, 2014 | 66 | 2014 |
| Demonstration of Large-Size Vertical Ga2O3 Schottky Barrier Diodes M Ji, NR Taylor, I Kravchenko, P Joshi, T Aytug, LR Cao, ... IEEE Transactions on Power Electronics 36 (1), 41-44, 2020 | 59 | 2020 |
| Thermal characterization of gallium nitride pin diodes J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ... Applied Physics Letters 112 (7), 2018 | 58 | 2018 |
| AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than J Kim, MH Ji, T Detchprohm, JH Ryou, RD Dupuis, AK Sood, NK Dhar IEEE Photonics Technology Letters 27 (6), 642-645, 2015 | 42 | 2015 |
| Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays MH Ji, J Kim, T Detchprohm, RD Dupuis, AK Sood, NK Dhar, J Lewis IEEE Photonics Technology Letters 28 (19), 2015-2018, 2016 | 32 | 2016 |
| Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates J Kim, MH Ji, T Detchprohm, RD Dupuis, JH Ryou, AK Sood, ND Dhar, ... Applied Physics Express 8 (12), 122202, 2015 | 29 | 2015 |
| GaN/InGaN avalanche phototransistors SC Shen, TT Kao, HJ Kim, YC Lee, J Kim, MH Ji, JH Ryou, T Detchprohm, ... Applied Physics Express 8 (3), 032101, 2015 | 26 | 2015 |
| Temperature-dependent characteristics of GaN homojunction rectifiers TT Kao, J Kim, YC Lee, AFMS Haq, MH Ji, T Detchprohm, RD Dupuis, ... IEEE Transactions on Electron Devices 62 (8), 2679-2683, 2015 | 23 | 2015 |
| Temperature-dependent leakage current characteristics of homojunction GaN pin rectifiers using ion-implantation isolation CW Tsou, MH Ji, M Bakhtiary-Noodeh, T Detchprohm, RD Dupuis, ... IEEE Transactions on Electron Devices 66 (10), 4273-4278, 2019 | 21 | 2019 |
| Pipin separate absorption and multiplication ultraviolet avalanche photodiodes MH Ji, J Kim, T Detchprohm, Y Zhu, SC Shen, RD Dupuis IEEE Photonics Technology Letters 30 (2), 181-184, 2017 | 21 | 2017 |
| Development of high gain GaN/AlGaN avalanche photodiode arrays for UV detection and imaging applications AK Sood, JW Zeller, YR Puri, RD Dupuis, T Detchprohm, MH Ji, SC Shen, ... Int. J. Engr. Res. Tech 10 (2), 129-150, 2017 | 17 | 2017 |
| Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production D Key, E Letts, CW Tsou, MH Ji, M Bakhtiary-Noodeh, T Detchprohm, ... Materials 12 (12), 1925, 2019 | 14 | 2019 |
| III-N high-power bipolar transistors RD Dupuis, J Kim, YC Lee, Z Lochner, MH Ji, TT Kao, JH Ryou, ... ECS Transactions 58 (4), 261, 2013 | 14 | 2013 |
| Homojunction GaN pin rectifiers with ultra-low on-state resistance TT Kao, J Kim, YC Lee, MH Ji, T Detchprohm, RD Dupuis, SC Shen Proc. CS MANTECH Int. Conf. Compound Semicond. Manuf. Technol, 157-160, 2014 | 13 | 2014 |
| Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation J Kim, MH Ji, D Yuan, R Guo, J Liu, M Asadirad, T Detchprohm, MK Kwon, ... Applied Physics Letters 104 (14), 2014 | 13 | 2014 |
| Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts NR Taylor, Y Yu, M Ji, T Aytug, S Mahurin, R Mayes, S Cetiner, ... Applied Physics Letters 116 (25), 2020 | 11 | 2020 |
| Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition J Kim, MH Ji, T Detchprohm, RD Dupuis, AM Fischer, FA Ponce, JH Ryou Journal of Applied Physics 118 (12), 2015 | 11 | 2015 |
| Demonstration of uniform and reliable GaN pipin separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area MH Ji, H Jeong, M Bakhtiary-Noodeh, SC Shen, T Detchprohm, AK Sood, ... Gallium Nitride Materials and Devices XIV 10918, 51-56, 2019 | 8 | 2019 |
