Hossein Elahipanah
Hossein Elahipanah
Ascatron AB
Verified email at ascatron.com - Homepage
TitleCited byYear
A 1300-V 0.34-Partial SOI LDMOSFET With Novel Dual Charge Accumulation Layers
H Elahipanah, AA Orouji
IEEE Transactions on Electron Devices 57 (8), 1959-1965, 2010
302010
5.8-kV implantation-free 4H-SiC BJT with multiple-shallow-trench junction termination extension
H Elahipanah, A Salemi, CM Zetterling, M Östling
IEEE Electron Device Letters 36 (2), 168-170, 2014
232014
Temperature dependence of electrical characteristics of carbon nanotube field-effect transistors: a quantum simulation study
A Naderi, SM Noorbakhsh, H Elahipanah
Journal of Nanomaterials 2012, 7, 2012
222012
Simulation and optimization of high breakdown double-recessed 4H-SiC MESFET with metal plate termination technique
H Elahipanah
Superlattices and Microstructures 48 (6), 529-540, 2010
212010
15 kV-Class Implantation-Free 4H-SiC BJTs with Record High Current Gain
A Salemi, H Elahipanah, K Jacobs, CM Zetterling, M Östling
IEEE Electron Device Letters 39 (1), 63-66, 2018
182018
Record gain at 3.1 GHz of 4H-SiC high power RF MESFET
H Elahipanah
Microelectronics Journal 42 (2), 299-304, 2011
182011
Optimal emitter cell geometry in high power 4H-SiC BJTs
A Salemi, H Elahipanah, CM Zetterling, M Östling
IEEE Electron Device Letters 36 (10), 1069-1072, 2015
152015
Area-and efficiency-optimized junction termination for a 5.6 kV SiC BJT process with low ON-resistance
A Salemi, H Elahipanah, G Malm, CM Zetterling, M Östling
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
152015
500° C high current 4H-SiC lateral BJTs for high-temperature integrated circuits
H Elahipanah, S Kargarrazi, A Salemi, M Östling, CM Zetterling
IEEE Electron Device Letters 38 (10), 1429-1432, 2017
112017
Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes
A Salemi, H Elahipanah, B Buono, A Hallén, JU Hassan, P Bergman, ...
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
112015
A 500° C active down-conversion mixer in silicon carbide bipolar technology
MW Hussain, H Elahipanah, JE Zumbro, S Schröder, S Rodriguez, ...
IEEE Electron Device Letters 39 (6), 855-858, 2018
102018
500° C, High Current Linear Voltage Regulator in 4H-SiC BJT technology
S Kargarrazi, H Elahipanah, S Rodriguez, CM Zetterling
IEEE Electron Device Letters 39 (4), 548-551, 2018
102018
Area-optimized JTE for 4.5 kV non ion-implanted 4H-SiC BJT
A Salemi, H Elahipanah, B Buono, CM Zetterling, M Östling
Materials Science Forum 740, 974-977, 2013
102013
A wafer-scale Ni-salicide contact technology on n-type 4H-SiC
H Elahipanah, A Asadollahi, M Ekström, A Salemi, CM Zetterling, ...
ECS Journal of Solid State Science and Technology 6 (4), P197-P200, 2017
92017
A novel nanoscale 4H-SiC-on-insulator MOSFET using step doping channel
AA Orouji, H Elahipanah
IEEE Transactions on Device and Materials Reliability 10 (1), 92-95, 2009
92009
Modification of etched junction termination extension for the high voltage 4H-SiC power devices
H Elahipanah, A Salemi, CM Zetterling, M Östling
Materials Science Forum 858, 978-981, 2016
82016
Gain improvement and microwave operation of 4H–SiC MESFET with a new recessed metal ring structure
H Elahipanah, AA Orouji
Microelectronics Journal 43 (7), 466-472, 2012
82012
Intertwined design: A novel lithographic method to realize area efficient high-voltage SiC BJTs and Darlington transistors
H Elahipanah, A Salemi, CM Zetterling, M Östling
IEEE Transactions on Electron Devices 63 (11), 4366-4372, 2016
72016
Improved 4H–SiC MESFET with double source field plate structures
SM Noorbakhsh, H Elahipanah
Superlattices and Microstructures 51 (5), 553-562, 2012
72012
Low temperature Ni-Al ohmic contacts to p-type 4H-SiC using semi-salicide processing
M Ekström, S Hou, H Elahipanah, A Salemi, M Östling, CM Zetterling
Materials Science Forum 924, 389-392, 2018
62018
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