Natalia Seoane Iglesias
Natalia Seoane Iglesias
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Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors
A Martinez, M Aldegunde, N Seoane, AR Brown, JR Barker, A Asenov
IEEE transactions on electron devices 58 (8), 2209-2217, 2011
Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: A fully 3-D NEGF simulation study
N Seoane, A Martinez, AR Brown, JR Barker, A Asenov
IEEE Transactions on electron devices 56 (7), 1388-1395, 2009
Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques
A Asenov, AR Brown, G Roy, B Cheng, C Alexander, C Riddet, U Kovac, ...
Journal of computational electronics 8 (3-4), 349-373, 2009
Implementation of the density gradient quantum corrections for 3-D simulations of multigate nanoscaled transistors
AJ Garcia-Loureiro, N Seoane, M Aldegunde, R Valin, A Asenov, ...
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2011
Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully three-dimensional NEGF simulation study
A Martinez, N Seoane, AR Brown, JR Barker, A Asenov
IEEE Transactions on electron devices 57 (7), 1626-1635, 2010
Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs FinFET
N Seoane, G Indalecio, E Comesana, M Aldegunde, AJ Garcia-Loureiro, ...
IEEE Transactions on Electron Devices 61 (2), 466-472, 2013
Advanced simulation of statistical variability and reliability in nano CMOS transistors
A Asenov, S Roy, RA Brown, G Roy, C Alexander, C Riddet, C Millar, ...
2008 IEEE International Electron Devices Meeting, 1-1, 2008
Benchmarking of scaled InGaAs implant-free nanoMOSFETs
K Kalna, N Seoane, AJ Garcia-Loureiro, IG Thayne, A Asenov
IEEE transactions on electron devices 55 (9), 2297-2306, 2008
FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability
D Nagy, G Indalecio, AJ García-Loureiro, MA Elmessary, K Kalna, ...
IEEE Journal of the Electron Devices Society 6, 332-340, 2018
3-D nonequilibrium Green's function simulation of nonperturbative scattering from discrete dopants in the source and drain of a silicon nanowire transistor
A Martinez, N Seoane, AR Brown, JR Barker, A Asenov
IEEE Transactions on Nanotechnology 8 (5), 603-610, 2009
Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs
N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ...
IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ...
Solid-State Electronics 128, 17-24, 2017
Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes
M Aldegunde, N Seoane, AJ García-Loureiro, K Kalna
Computer Physics Communications 181 (1), 24-34, 2010
Study of parallel numerical methods for semiconductor device simulation
N Seoane, AJ García‐Loureiro
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2006
Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator
N Seoane, AJ Garcia-Loureiro, K Kalna, A Asenov
Solid-state electronics 51 (3), 481-488, 2007
Statistical study of the influence of LER and MGG in SOI MOSFET
G Indalecio, M Aldegunde, N Seoane, K Kalna, AJ Garcia-Loureiro
Semiconductor Science and Technology 29 (4), 045005, 2014
Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET
N Seoane, G Indalecio, E Comesana, AJ Garcia-Loureiro, M Aldegunde, ...
IEEE electron device letters 34 (2), 205-207, 2013
Impact of cross-sectional shape on 10-nm gate length InGaAs FinFET performance and variability
N Seoane, G Indalecio, D Nagy, K Kalna, AJ Garcia-Loureiro
IEEE Transactions on Electron Devices 65 (2), 456-462, 2018
A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET
A Martinez, AR Brown, A Asenov, N Seoane
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field …
N Seoane, A Martinez
Journal of Applied Physics 114 (10), 104307, 2013
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