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Karsten Bothe
Karsten Bothe
Group Leader Solar Cell Characterisation and simulation, Institut für Solarenergieforschung
Verified email at isfh.de
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Cited by
Cited by
Year
Solar cell efficiency tables (Version 61)
XH Martin A. Green, Ewan D. Dunlop, Gerald Siefer, Masahiro Yoshita, Nikos ...
Progress in Photovoltaics 31 (1), 3-16, 2022
16659*2022
Structure and transformation of the metastable boron-and oxygen-related defect center in crystalline silicon
J Schmidt, K Bothe
Physical review B 69 (2), 024107, 2004
5462004
Electronically activated boron-oxygen-related recombination centers in crystalline silicon
K Bothe, J Schmidt
Journal of Applied Physics 99 (1), 2006
4492006
Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon
C Schinke, P Christian Peest, J Schmidt, R Brendel, K Bothe, MR Vogt, ...
Aip Advances 5 (6), 2015
4452015
Fundamental boron–oxygen‐related carrier lifetime limit in mono‐and multicrystalline silicon
K Bothe, R Sinton, J Schmidt
Progress in photovoltaics: Research and Applications 13 (4), 287-296, 2005
3852005
Series resistance imaging of solar cells by voltage dependent electroluminescence
D Hinken, K Ramspeck, K Bothe, B Fischer, R Brendel
Applied Physics Letters 91 (18), 2007
2352007
Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography
K Ramspeck, K Bothe, D Hinken, B Fischer, J Schmidt, R Brendel
Applied Physics Letters 90 (15), 2007
1742007
Understanding junction breakdown in multicrystalline solar cells
O Breitenstein, J Bauer, K Bothe, W Kwapil, D Lausch, U Rau, J Schmidt, ...
Journal of applied physics 109 (7), 2011
1632011
Impurity-related limitations of next-generation industrial silicon solar cells
J Schmidt, B Lim, D Walter, K Bothe, S Gatz, T Dullweber, PP Altermatt
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-5, 2012
1552012
19.4%‐efficient large‐area fully screen‐printed silicon solar cells
S Gatz, H Hannebauer, R Hesse, F Werner, A Schmidt, T Dullweber, ...
physica status solidi (RRL)–Rapid Research Letters 5 (4), 147-149, 2011
1542011
Photoconductance‐calibrated photoluminescence lifetime imaging of crystalline silicon
S Herlufsen, J Schmidt, D Hinken, K Bothe, R Brendel
physica status solidi (RRL)–Rapid Research Letters 2 (6), 245-247, 2008
1432008
Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
JD Murphy, K Bothe, R Krain, VV Voronkov, RJ Falster
Journal of Applied Physics 111 (11), 2012
1412012
Detection of the voltage distribution in photovoltaic modules by electroluminescence imaging
T Potthoff, K Bothe, U Eitner, D Hinken, M Köntges
Progress in Photovoltaics: Research and Applications 18 (2), 100-106, 2010
1192010
Dynamic carrier lifetime imaging of silicon wafers using an infrared-camera-based approach
K Ramspeck, S Reißenweber, J Schmidt, K Bothe, R Brendel
Applied Physics Letters 93 (10), 2008
1112008
Recombination-enhanced formation of the metastable boron–oxygen complex in crystalline silicon
K Bothe, R Hezel, J Schmidt
Applied Physics Letters 83 (6), 1125-1127, 2003
1032003
Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
JD Murphy, RE McGuire, K Bothe, VV Voronkov, RJ Falster
Solar Energy Materials and Solar Cells 120, 402-411, 2014
1022014
Can luminescence imaging replace lock-in thermography on solar cells?
O Breitenstein, J Bauer, K Bothe, D Hinken, J Müller, W Kwapil, ...
IEEE Journal of Photovoltaics 1 (2), 159-167, 2011
1012011
Hao, Xiaojing Solar cell efficiency tables (Version 61)
MA Green, ED Dunlop, G Siefer, M Yoshita, N Kopidakis, K Bothe
Prog. Photovolt Res. Appl 31 (1), 3-16, 2023
962023
Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature
B Lim, K Bothe, J Schmidt
physica status solidi (RRL)–Rapid Research Letters 2 (3), 93-95, 2008
962008
Generation and annihilation of boron–oxygen-related recombination centers in compensated p-and n-type silicon
B Lim, F Rougieux, D Macdonald, K Bothe, J Schmidt
Journal of Applied Physics 108 (10), 2010
952010
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