Luigia Lanni
Luigia Lanni
KTH Royal Institute of Technology
Verified email at intel.com
TitleCited byYear
500Bipolar Integrated OR/NOR Gate in 4H-SiC
L Lanni, BG Malm, M Ístling, CM Zetterling
IEEE Electron Device Letters 34 (9), 1091-1093, 2013
812013
A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology
R Hedayati, L Lanni, S Rodriguez, BG Malm, A Rusu, CM Zetterling
IEEE Electron Device Letters 35 (7), 693-695, 2014
532014
Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC
L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling
IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012
522012
500 C bipolar SiC linear voltage regulator
S Kargarrazi, L Lanni, S Saggini, A Rusu, CM Zetterling
IEEE Transactions on Electron Devices 62 (6), 1953-1957, 2015
352015
A monolithic SiC drive circuit for SiC Power BJTs
S Kargarrazi, L Lanni, A Rusu, CM Zetterling
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC'sá…, 2015
292015
SiC etching and sacrificial oxidation effects on the performance of 4H-SiC BJTs
L Lanni, BG Malm, M Ístling, CM Zetterling
Materials Science Forum 778, 1005-1008, 2014
242014
Influence of passivation oxide thickness and device layout on the current gain of SiC BJTs
L Lanni, BG Malm, M Ístling, CM Zetterling
IEEE Electron Device Letters 36 (1), 11-13, 2014
232014
Wide temperature range integrated bandgap voltage references in 4H–SiC
R Hedayati, L Lanni, A Rusu, CM Zetterling
IEEE Electron Device Letters 37 (2), 146-149, 2015
212015
Design and characterization of 500 C Schmitt trigger in 4H-SiC
S Kargarrazi, L Lanni, CM Zetterling
Materials Science Forum 821, 897-901, 2015
182015
Bipolar integrated circuits in SiC for extreme environment operation
CM Zetterling, A HallÚn, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ...
Semiconductor Science and Technology 32 (3), 034002, 2017
172017
A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier
S Kargarrazi, L Lanni, CM Zetterling
Solid-State Electronics 116, 33-37, 2016
162016
Silicon carbide fully differential amplifier characterized up to 500 C
Y Tian, L Lanni, A Rusu, CM Zetterling
IEEE Transactions on Electron Devices 63 (6), 2242-2247, 2016
142016
Lateral pnp transistors and complementary SiC bipolar technology
L Lanni, BG Malm, M Ístling, CM Zetterling
IEEE Electron Device Letters 35 (4), 428-430, 2014
132014
Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits
L Lanni
KTH Royal Institute of Technology, 2014
132014
Future high temperature applications for SiC integrated circuits
CM Zetterling, L Lanni, R Ghandi, BG Malm, M Ístling
physica status solidi c 9 (7), 1647-1650, 2012
132012
ECL-based SiC logic circuits for extreme temperatures
L Lanni, BG Malm, M Ístling, CM Zetterling
Materials Science Forum 821, 910-913, 2015
122015
Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from-40 C to 500 C
K Smedfors, L Lanni, M Ístling, CM Zetterling
Materials Science Forum 778, 681-684, 2014
122014
A 4H-SiC bipolar technology for high-temperature integrated circuits
L Lanni, BG Malm, CM Zetterling, M Ístling
Journal of Microelectronics and Electronic Packaging 10 (4), 155-162, 2013
122013
A 500 C 8-b digital-to-analog converter in silicon carbide bipolar technology
R Hedayati, L Lanni, BG Malm, A Rusu, CM Zetterling
IEEE Transactions on Electron Devices 63 (9), 3445-3450, 2016
112016
High gamma ray tolerance for 4H-SiC bipolar circuits
SS Suvanam, SI Kuroki, L Lanni, R Hadayati, T Ohshima, T Makino, ...
IEEE Transactions on Nuclear Science 64 (2), 852-858, 2016
102016
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Articles 1–20