Seiji Nagahara
Seiji Nagahara
Tokyo Electron Ltd.
Verified email at tel.com
Title
Cited by
Cited by
Year
Radiation and photochemistry of onium salt acid generators in chemically amplified resists
S Tagawa, S Nagahara, T Iwamoto, M Wakita, T Kozawa, Y Yamamoto, ...
Advances in Resist Technology and Processing XVII 3999, 204-213, 2000
1562000
Heated embossing and ply attachment
JL Baggot, TL Baum, PK Pauling, JA Wood
US Patent 6,913,673, 2005
1102005
Radiation-induced reactions of chemically amplified x-ray and electron-beam resists based on deprotection of -butoxycarbonyl groups
T Kozawa, S Nagahara, Y Yoshida, S Tagawa, T Watanabe, Y Yamashita
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997
1091997
MEMS device with controlled gas space chemistry
WM Duncan, SJ Jacobs, MR Douglass, RO Gale
US Patent 6,746,886, 2004
78*2004
Pattern scaling with directed self assembly through lithography and etch process integration
B Rathsack, M Somervell, J Hooge, M Muramatsu, K Tanouchi, T Kitano, ...
Alternative Lithographic Technologies IV 8323, 83230B, 2012
702012
Contact hole shrink process using graphoepitaxial directed self-assembly lithography
Y Seino, H Yonemitsu, H Sato, M Kanno, H Kato, K Kobayashi, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 12 (3), 033011, 2013
512013
Contact hole shrink process using directed self-assembly
Y Seino, H Yonemitsu, H Sato, M Kanno, H Kato, K Kobayashi, ...
Alternative Lithographic Technologies IV 8323, 83230Y, 2012
422012
Advances in directed self assembly integration and manufacturability at 300 mm
B Rathsack, M Somervell, M Muramatsu, K Tanouchi, T Kitano, ...
Advances in Resist Materials and Processing Technology XXX 8682, 86820K, 2013
352013
Chemical amplification type photoresist composition, method for producing a semiconductor device using the composition, and semiconductor substrate
S Nagahara, T Sakurada, T Yoshihara
US Patent 6,800,551, 2004
302004
High-volume manufacturing equipment and processing for directed self-assembly applications
M Somervell, T Yamauchi, S Okada, T Tomita, T Nishi, E Iijima, T Nakano, ...
Advances in Patterning Materials and Processes XXXI 9051, 90510N, 2014
282014
Methods to improve radiation sensitivity of chemically amplified resists by using chain reactions of acid generation
S Nagahara, Y Sakurai, M Wakita, Y Yamamoto, S Tagawa, M Komuro, ...
Advances in Resist Technology and Processing XVII 3999, 386-394, 2000
262000
Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography
E Buitrago, S Nagahara, O Yildirim, H Nakagawa, S Tagawa, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 15 (3), 033502, 2016
252016
Novel high sensitivity EUV photoresist for sub-7 nm node
T Nagai, H Nakagawa, T Naruoka, S Dei, S Tagawa, A Oshima, ...
Journal of Photopolymer Science and Technology 29 (3), 475-478, 2016
252016
Semiconductor device and method of manufacturing the same
S Nagahara, K Shiba, N Hamanaka, T Usami, T Yokoyama
US Patent App. 10/303,715, 2003
252003
Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process
S Nagahara, M Hiroi
US Patent 7,479,361, 2009
232009
Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition
S Nagahara, S Watanabe, K Maeda
US Patent 7,396,633, 2008
232008
Challenge toward breakage of RLS trade-off for EUV lithography by Photosensitized Chemically Amplified Resist (PSCAR) with flood exposure
S Nagahara, M Carcasi, H Nakagawa, E Buitrago, O Yildirim, G Shiraishi, ...
Extreme Ultraviolet (EUV) Lithography VII 9776, 977607, 2016
222016
Semiconductor device and method of manufacturing the same
S Nagahara, K Shiba, N Hamanaka, T Usami, T Yokoyama
US Patent 7,217,654, 2007
212007
Understanding quencher mechanisms by considering photoacid-dissociation equilibrium in chemically amplified resists
S Nagahara, L Yuan, WJ Poppe, A Neureuther, Y Kono, A Sekiguchi, ...
Advances in Resist Technology and Processing XXII 5753, 338-349, 2005
212005
Method of forming wiring structure by using photo resist having optimum development rate
S Nagahara
US Patent 6,774,028, 2004
212004
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Articles 1–20