| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1147 | 2018 |
| Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels AJ Fischer, AA Allerman, MH Crawford, KHA Bogart, SR Lee, RJ Kaplar, ... Applied Physics Letters 84 (17), 3394-3396, 2004 | 234 | 2004 |
| Ultra-wide-bandgap AlGaN power electronic devices RJ Kaplar, AA Allerman, AM Armstrong, MH Crawford, JR Dickerson, ... ECS Journal of Solid State Science and Technology 6 (2), Q3061, 2016 | 154 | 2016 |
| An AlN/Al0. 85Ga0. 15N high electron mobility transistor AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ... Applied Physics Letters 109 (3), 2016 | 140 | 2016 |
| Vertical GaN power diodes with a bilayer edge termination JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ... IEEE Transactions on Electron Devices 63 (1), 419-425, 2015 | 125 | 2015 |
| Deep levels in p-type InGaAsN lattice matched to GaAs D Kwon, RJ Kaplar, SA Ringel, AA Allerman, SR Kurtz, ED Jones Applied physics letters 74 (19), 2830-2832, 1999 | 105 | 1999 |
| High voltage and high current density vertical GaN power diodes AM Armstrong, AA Allerman, AJ Fischer, MP King, MS Van Heukelom, ... Electronics Letters 52 (13), 1170-1171, 2016 | 95 | 2016 |
| Deep levels in p-and n-type InGaAsN for high-efficiency multi-junction III–V solar cells RJ Kaplar, D Kwon, SA Ringel, AA Allerman, SR Kurtz, ED Jones, ... Solar energy materials and solar cells 69 (1), 85-91, 2001 | 76 | 2001 |
| Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials RJ Kaplar, JC Neely, DL Huber, LJ Rashkin IEEE Power Electronics Magazine 4 (1), 36-42, 2017 | 63 | 2017 |
| Ohmic contacts to Al‐rich AlGaN heterostructures EA Douglas, S Reza, C Sanchez, D Koleske, A Allerman, B Klein, ... physica status solidi (a) 214 (8), 1600842, 2017 | 59 | 2017 |
| Deep levels and their impact on generation current in Sn-doped InGaAsN RJ Kaplar, AR Arehart, SA Ringel, AA Allerman, RM Sieg, SR Kurtz Journal of Applied Physics 90 (7), 3405-3408, 2001 | 58 | 2001 |
| Characterization and reliability of SiC-and GaN-based power transistors for renewable energy applications RJ Kaplar, MJ Marinella, S DasGupta, MA Smith, S Atcitty, M Sun, ... 2012 IEEE Energytech, 1-6, 2012 | 57 | 2012 |
| Slow detrapping transients due to gate and drain bias stress in high breakdown voltage AlGaN/GaN HEMTs S DasGupta, M Sun, A Armstrong, RJ Kaplar, MJ Marinella, JB Stanley, ... IEEE transactions on electron devices 59 (8), 2115-2122, 2012 | 57 | 2012 |
| RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates AG Baca, BA Klein, JR Wendt, SM Lepkowski, CD Nordquist, ... IEEE Electron Device Letters 40 (1), 17-20, 2018 | 54 | 2018 |
| PV inverter performance and reliability: What is the role of the bus capacitor? J Flicker, R Kaplar, M Marinella, J Granata 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-3, 2012 | 54 | 2012 |
| A derivation of the van der Pauw formula from electrostatics JD Weiss, RJ Kaplar, KE Kambour Solid-State Electronics 52 (1), 91-98, 2008 | 54 | 2008 |
| Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices ME Coltrin, RJ Kaplar Journal of Applied Physics 121 (5), 2017 | 52 | 2017 |
| Analysis of 2D transport and performance characteristics for lateral power devices based on AlGaN alloys ME Coltrin, AG Baca, RJ Kaplar ECS Journal of Solid State Science and Technology 6 (11), S3114, 2017 | 51 | 2017 |
| Ultrawide bandgap semiconductors M Higashiwaki, R Kaplar, J Pernot, H Zhao Applied Physics Letters 118 (20), 2021 | 49 | 2021 |
| Al-rich AlGaN based transistors AG Baca, AM Armstrong, BA Klein, AA Allerman, EA Douglas, RJ Kaplar Journal of Vacuum Science & Technology A 38 (2), 2020 | 49 | 2020 |
