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Ravi Pramod Vedula
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The ultimate CMOS device and beyond
KJ Kuhn, U Avci, A Cappellani, MD Giles, M Haverty, S Kim, R Kotlyar, ...
2012 International Electron Devices Meeting, 8.1. 1-8.1. 4, 2012
972012
First-principles investigation of low energy E′ center precursors in amorphous silica
NL Anderson, RP Vedula, PA Schultz, RM Van Ginhoven, A Strachan
Physical review letters 106 (20), 206402, 2011
642011
Defect level distributions and atomic relaxations induced by charge trapping in amorphous silica
NL Anderson, R Pramod Vedula, PA Schultz, RM Van Ginhoven, ...
Applied Physics Letters 100 (17), 2012
422012
Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study
RP Vedula, NL Anderson, A Strachan
Physical Review B 85 (20), 205209, 2012
372012
Role of atomic variability in dielectric charging: A first-principles-based multiscale modeling study
RP Vedula, S Palit, MA Alam, A Strachan
Physical Review B 88 (20), 205204, 2013
162013
DFT calculations with Quantum ESPRESSO
J Jhaveri, RPK Vedula, A Strachan, BP Haley
52010
Nanomaterials SeqQUEST DFT
RPK Vedula, G Bechtol, BP Haley, A Strachan
52008
Model form uncertainty versus intrinsic atomic variability in amorphous silicon oxides and nitrides
NL Anderson, RP Vedula, A Strachan
Computational Materials Science 109, 124-128, 2015
12015
Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations
RP Vedula, S Mehrotra, T Kubis, M Povolotskyi, G Klimeck, A Strachan
Journal of Applied Physics 117 (17), 2015
12015
Predictive atomistic simulations of electronic properties of realistic nanoscale devices: A multiscale modeling approach
RPK Vedula
Purdue University, 2013
12013
Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations (vol 117, 174312, 2015)
RP Vedula, S Mehrotra, T Kubis, M Povolotskyi, G Klimeck, A Strachan
JOURNAL OF APPLIED PHYSICS 118 (1), 2015
2015
Charge trap distributions and correlated atomic relaxations in amorphous silica.
PA Schultz, NL Anderson, RP Vedula, RM Van Ginhoven, A Strachan
Proposed for publication in Applied Physics Letters., 2012
2012
Cyber-Enabled Materials Simulations via NanoHUB. org
A Strachan, B Haley, R Pramod Vedula
AIP Conference Proceedings, 2012
2012
First Principles Investigation of Structure and Electronic Properties of a-Si3N4
R Pramod Vedula, NL Anderson, A Strachan
APS Meeting Abstracts 1, 35008, 2011
2011
First Principles Investigation of Structure and Electronic Properties of a - Si3 N 4
RP Vedula, NL Anderson, A Strachan
APS March Meeting Abstracts 2011, Z35. 008, 2011
2011
First principles investigation of low energy E'precursors in amorphous silica.
PA Schultz, NL Anderson, RP Vedula, RM Van Ginhoven, AH Strachan
Physical Review Letters, 2010
2010
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