The ultimate CMOS device and beyond KJ Kuhn, U Avci, A Cappellani, MD Giles, M Haverty, S Kim, R Kotlyar, ... 2012 International Electron Devices Meeting, 8.1. 1-8.1. 4, 2012 | 97 | 2012 |
First-principles investigation of low energy E′ center precursors in amorphous silica NL Anderson, RP Vedula, PA Schultz, RM Van Ginhoven, A Strachan Physical review letters 106 (20), 206402, 2011 | 64 | 2011 |
Defect level distributions and atomic relaxations induced by charge trapping in amorphous silica NL Anderson, R Pramod Vedula, PA Schultz, RM Van Ginhoven, ... Applied Physics Letters 100 (17), 2012 | 42 | 2012 |
Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study RP Vedula, NL Anderson, A Strachan Physical Review B 85 (20), 205209, 2012 | 37 | 2012 |
Role of atomic variability in dielectric charging: A first-principles-based multiscale modeling study RP Vedula, S Palit, MA Alam, A Strachan Physical Review B 88 (20), 205204, 2013 | 16 | 2013 |
DFT calculations with Quantum ESPRESSO J Jhaveri, RPK Vedula, A Strachan, BP Haley | 5 | 2010 |
Nanomaterials SeqQUEST DFT RPK Vedula, G Bechtol, BP Haley, A Strachan | 5 | 2008 |
Model form uncertainty versus intrinsic atomic variability in amorphous silicon oxides and nitrides NL Anderson, RP Vedula, A Strachan Computational Materials Science 109, 124-128, 2015 | 1 | 2015 |
Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations RP Vedula, S Mehrotra, T Kubis, M Povolotskyi, G Klimeck, A Strachan Journal of Applied Physics 117 (17), 2015 | 1 | 2015 |
Predictive atomistic simulations of electronic properties of realistic nanoscale devices: A multiscale modeling approach RPK Vedula Purdue University, 2013 | 1 | 2013 |
Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations (vol 117, 174312, 2015) RP Vedula, S Mehrotra, T Kubis, M Povolotskyi, G Klimeck, A Strachan JOURNAL OF APPLIED PHYSICS 118 (1), 2015 | | 2015 |
Charge trap distributions and correlated atomic relaxations in amorphous silica. PA Schultz, NL Anderson, RP Vedula, RM Van Ginhoven, A Strachan Proposed for publication in Applied Physics Letters., 2012 | | 2012 |
Cyber-Enabled Materials Simulations via NanoHUB. org A Strachan, B Haley, R Pramod Vedula AIP Conference Proceedings, 2012 | | 2012 |
First Principles Investigation of Structure and Electronic Properties of a-Si3N4 R Pramod Vedula, NL Anderson, A Strachan APS Meeting Abstracts 1, 35008, 2011 | | 2011 |
First Principles Investigation of Structure and Electronic Properties of a - Si3 N 4 RP Vedula, NL Anderson, A Strachan APS March Meeting Abstracts 2011, Z35. 008, 2011 | | 2011 |
First principles investigation of low energy E'precursors in amorphous silica. PA Schultz, NL Anderson, RP Vedula, RM Van Ginhoven, AH Strachan Physical Review Letters, 2010 | | 2010 |