| A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 108 | 2014 |
| Field effect transistors including fin structures with different doped regions and semiconductor devices including the same C Oh, MG Kang, B Kim, J Yoon US Patent App. 13/615,671, 2013 | 60 | 2013 |
| Nanowire Field Effect Transistors: Principles and Applications DM Kim, YH Jeong Springer, 2014 | 47 | 2014 |
| Semiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recess D Bae, B Kim, Y Cho US Patent 9,525,036, 2016 | 22 | 2016 |
| Silicon germanium FinFET device physics, process integration and modeling considerations D Lu, P Morin, B Sahu, TB Hook, P Hashemi, A Scholze, B Kim, P Kerber, ... ECS Transactions 64 (6), 337, 2014 | 17 | 2014 |
| Semiconductor device having a gate all around structure and a method for fabricating the same SD Suk, KIM Bom-Soo, K Seo US Patent 9,679,965, 2017 | 14 | 2017 |
| Field effect transistors including fin structures with different doped regions and semiconductor devices including the same C Oh, MG Kang, B Kim, J Yoon US Patent 9,653,551, 2017 | 14 | 2017 |
| Semiconductor devices having fin field effect transistors with a single liner pattern in a first region and a dual liner pattern in a second region and methods for … K Seo, B Kim, JH Cha US Patent App. 14/831,087, 2017 | 11 | 2017 |
| Edge profile effect of tunnel oxide on erase threshold-voltage distributions in flash memory cells B Kim, WH Kwon, CK Baek, Y Son, CK Park, K Kim, DM Kim IEEE transactions on electron devices 53 (12), 3012-3019, 2006 | 11 | 2006 |
| 10nm FINFET technology for low power and high performance applications D Guo, H Shang, K Seo, B Haran, T Standaert, D Gupta, E Alptekin, D Bae, ... 2014 12th IEEE International Conference on Solid-State and Integrated …, 2014 | 8 | 2014 |
| Investigation of fixed oxide charge and fin profile effects on bulk FinFET device characteristics B Kim, DI Bae, P Zeitzoff, X Sun, TE Standaert, N Tripathi, A Scholze, ... IEEE electron device letters 34 (12), 1485-1487, 2013 | 7 | 2013 |
| Reliable extraction of cycling induced interface states implementing realistic P/E stresses in reference cell: Comparison with Flash memory cell CK Baek, B Kim, Y Son, W Kwon, CK Park, YJ Park, HS Min, DM Kim IEEE electron device letters 27 (3), 169-171, 2006 | 5 | 2006 |
| Silicon nanowire field-effect transistor DM Kim, B Kim, RH Baek Nanowire Field Effect Transistors: Principles and Applications, 63-87, 2014 | 4 | 2014 |
| Highly reliable 256 Mb NOR Flash MLC with self-aligned process and controlled edge profile WH Kwon, JI Han, B Kim, CK Baek, SP Sim, WH Lee, JH Han, C Jung, ... Proc. Int. Conf. SSDM, 448-449, 2005 | 4 | 2005 |
| Three-dimensional simulation of dopant-fluctuation-induced threshold voltage dispersion in nonplanar MOS structures targeting flash EEPROM transistors B Kim, W Kwon, CK Baek, S Jin, Y Song, DM Kim IEEE transactions on electron devices 55 (6), 1456-1463, 2008 | 3 | 2008 |
| Simple experimental determination of the spread of trapped hot holes injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) cells: optimized erase and cell shrinkage B Kim, CK Baek, W Kwon, YH Jeong, DM Kim Japanese journal of applied physics 43 (12B), L1611, 2004 | 3 | 2004 |
| Spatial and temporal characterization of programming charge in SONOS memory cell: Effects of localized electron trapping B Kim, CK Baek, W Kwon, J Lee, YH Jeong, DM Kim Japanese journal of applied physics 43 (12B), L1581, 2004 | 3 | 2004 |
| Semiconductor device and method of fabricating the same S Suk, KIM Bom-Soo US Patent App. 14/802,843, 2017 | 2 | 2017 |
| Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs Y Son, CK Baek, B Kim, IS Han, TG Goo, O You, W Choi, HH Ji, HD Lee, ... 2006 IEEE Nanotechnology Materials and Devices Conference 1, 510-511, 2006 | | 2006 |
| Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique: N~ o~ t vs. Oxide … Y Son, CK Baek, B Kim, IS Han, TG Goo, HD Lee, DM Kim SOLID STATE DEVICES AND MATERIALS 2006, 422, 2006 | | 2006 |
Kang-ill SeoSamsung Electronics, Semiconductor R&D CenterVerified email at stanfordalumni.org
