| A comprehensive model of PMOS NBTI degradation MA Alam, S Mahapatra Microelectronics Reliability 45 (1), 71-81, 2005 | 927 | 2005 |
| A comprehensive model for PMOS NBTI degradation: Recent progress MA Alam, H Kufluoglu, D Varghese, S Mahapatra Microelectronics Reliability 47 (6), 853-862, 2007 | 381 | 2007 |
| A comparative study of different physics-based NBTI models S Mahapatra, N Goel, S Desai, S Gupta, B Jose, S Mukhopadhyay, ... IEEE transactions on electron devices 60 (3), 901-916, 2013 | 330 | 2013 |
| Critical Role of Interlayer in Hf0.5Zr0.5O2Ferroelectric FET Nonvolatile Memory Performance K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ... IEEE Transactions on Electron Devices, 2018 | 316 | 2018 |
| Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation AE Islam, H Kufluoglu, D Varghese, S Mahapatra, MA Alam IEEE Transactions on Electron Devices 54 (9), 2143-2154, 2007 | 300 | 2007 |
| Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs S Mahapatra, PB Kumar, MA Alam IEEE Transactions on Electron Devices 51 (9), 1371-1379, 2004 | 283 | 2004 |
| On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress S Mahapatra, D Saha, D Varghese, PB Kumar IEEE Transactions on Electron Devices 53 (7), 1583-1592, 2006 | 226 | 2006 |
| On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping … S Mahapatra, K Ahmed, D Varghese, AE Islam, G Gupta, L Madhav, ... 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 149 | 2007 |
| On the dispersive versus Arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory, and implications D Varghese, D Saha, S Mahapatra, K Ahmed, F Nouri, M Alam IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 141 | 2005 |
| Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ... Nature 604 (7904), 65-71, 2022 | 129 | 2022 |
| A critical re-evaluation of the usefulness of RD framework in predicting NBTI stress and recovery S Mahapatra, AE Islam, S Deora, VD Maheta, K Joshi, A Jain, MA Alam 2011 International Reliability Physics Symposium, 6A. 3.1-6A. 3.10, 2011 | 122 | 2011 |
| BTI Analysis Tool—Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation N Parihar, N Goel, S Mukhopadhyay, S Mahapatra IEEE Transactions on Electron Devices, 2018 | 113 | 2018 |
| A consistent physical framework for N and P BTI in HKMG MOSFETs K Joshi, S Mukhopadhyay, N Goel, S Mahapatra 2012 IEEE international reliability physics symposium (IRPS), 5A. 3.1-5A. 3.10, 2012 | 106 | 2012 |
| Mechanism of negative bias temperature instability in CMOS devices: degradation, recovery and impact of nitrogen S Mahapatra, PB Kumar, TR Dalei, D Sana, MA Alam IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 87 | 2004 |
| Isolation of NBTI stress generated interface trap and hole-trapping components in PNO p-MOSFETs S Mahapatra, VD Maheta, AE Islam, MA Alam IEEE Transactions on Electron Devices 56 (2), 236-242, 2009 | 85 | 2009 |
| Negative bias temperature instability in CMOS devices S Mahapatra, MA Alam, PB Kumar, TR Dalei, D Varghese, D Saha Microelectronic engineering 80, 114-121, 2005 | 72 | 2005 |
| Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC–AC Experimental Conditions N Parihar, U Sharma, RG Southwick, M Wang, JH Stathis, S Mahapatra IEEE Transactions on Electron Devices, 2018 | 71 | 2018 |
| Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs S Mahapatra, CD Parikh, VR Rao, CR Viswanathan, J Vasi IEEE Transactions on Electron Devices 47 (4), 789-796, 2000 | 71 | 2000 |
| A predictive reliability model for PMOS bias temperature degradation S Mahapatra, MA Alam Digest. International Electron Devices Meeting,, 505-508, 2002 | 70 | 2002 |
| Defect generation in p-MOSFETs under negative-bias stress: An experimental perspective S Mahapatra, MA Alam IEEE Transactions on Device and Materials Reliability 8 (1), 35-46, 2008 | 67 | 2008 |
