S Monaghan
S Monaghan
Verified email at tyndall.ie
Cited by
Cited by
A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0†…
… O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 024101, 2011
Temperature and frequency dependent electrical characterization of interfaces using capacitance-voltage and conductance methods
… O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 102902, 2009
Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk
Solid-State Electronics 53 (4), 438-444, 2009
Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ...
Journal of Applied Physics 120 (12), 125102, 2016
Wide spectral photoresponse of layered platinum diselenide-based photodiodes
C Yim, N McEvoy, S Riazimehr, DS Schneider, F Gity, S Monaghan, ...
Nano letters 18 (3), 1794-1800, 2018
Electrical, structural, and chemical properties of films formed by electron beam evaporation
K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ...
Journal of Applied Physics 104 (6), 064113, 2008
Structural and electrical analysis of the atomic layer deposition of capacitors with and without an interface control layer
A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 052904, 2010
Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric
V Djara, K Cherkaoui, M Schmidt, S Monaghan, … O'Connor, IM Povey, ...
IEEE transactions on electron devices 59 (4), 1084, 2012
Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
… O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley
Applied Physics Letters 99 (21), 212901, 2011
An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, … O'Connor, ...
Journal of Applied Physics 114 (14), 144105, 2013
Electrical analysis of three-stage passivated capacitors with varying thicknesses and incorporating an interface control layer
S Monaghan, A O’Mahony, K Cherkaoui, … O’Connor, IM Povey, ...
Journal of Vacuum Science & Technology B, Nanotechnology and†…, 2011
The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
PK Hurley, … O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013
Charged defect quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS capacitors
RD Long, B Shin, S Monaghan, K Cherkaoui, J Cagnon, S Stemmer, ...
Journal of The Electrochemical Society 158 (5), G103, 2011
/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Depositedfor DRAM Applications
S Monaghan, K Cherkaoui, E O'connor, V Djara, PK Hurley, L Oberbeck, ...
IEEE electron device letters 30 (3), 219-221, 2009
Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
PK Hurley, E O'Connor, S Monaghan, R Long, A O'Mahony, IM Povey, ...
ECS Transactions 25 (6), 113, 2009
Atomic scale model interfaces between high-k hafnium silicates and silicon
S Monaghan, JC Greer, SD Elliott
Physical Review B 75 (24), 245304, 2007
Structural analysis, elemental profiling, and electrical characterization of thin films deposited on surfaces by atomic layer deposition
RD Long, … O’Connor, SB Newcomb, S Monaghan, K Cherkaoui, ...
Journal of Applied Physics 106 (8), 084508, 2009
Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
W Cabrera, B Brennan, H Dong, TP O'Regan, IM Povey, S Monaghan, ...
Applied Physics Letters 104 (1), 011601, 2014
Thermal decomposition mechanisms of hafnium and zirconium silicates at the atomic scale
S Monaghan, JC Greer, SD Elliott
Journal of applied physics 97 (11), 114911, 2005
Electrically active interface defects in the In0. 53Ga0. 47As MOS system
V Djara, TP O’Regan, K Cherkaoui, M Schmidt, S Monaghan, … O’Connor, ...
Microelectronic engineering 109, 182-188, 2013
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