| Impact of aggressive fin width scaling on FinFET device characteristics X He, J Fronheiser, P Zhao, Z Hu, S Uppal, X Wu, Y Hu, R Sporer, L Qin, ... 2017 IEEE International Electron Devices Meeting (IEDM), 20.2. 1-20.2. 4, 2017 | 50 | 2017 |
| Detailed investigation of Ge–Si interdiffusion in the full range of Si1− xGex (≤ x≤ 1) composition M Gavelle, EM Bazizi, E Scheid, PF Fazzini, F Cristiano, C Armand, ... Journal of Applied Physics 104 (11), 2008 | 45 | 2008 |
| Studies of implanted boron emitters for solar cell applications BJ Pawlak, T Janssens, S Singh, I Kuzma‐Filipek, J Robbelein, ... Progress in Photovoltaics: Research and Applications 20 (1), 106-110, 2012 | 32 | 2012 |
| A unified interdiffusivity model and model verification for tensile and relaxed SiGe interdiffusion over the full germanium content range Y Dong, Y Lin, S Li, S McCoy, G Xia Journal of Applied Physics 111 (4), 2012 | 28 | 2012 |
| Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties F Cristiano Université Paul Sabatier-Toulouse III, 2013 | 16 | 2013 |
| Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties F Cristiano Université Paul Sabatier-Toulouse III, 2013 | 16 | 2013 |
| RF-pFET in fully depleted SOI demonstrates 420 GHz FT J Watts, K Sundaram, KWJ Chew, S Lehmann, SN Ong, WH Chow, ... 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 84-87, 2017 | 15 | 2017 |
| Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator EM Bazizi, PF Fazzini, A Pakfar, C Tavernier, B Vandelle, H Kheyrandish, ... Journal of Applied Physics 107 (7), 2010 | 15 | 2010 |
| Impact of MOL/BEOL air-spacer on parasitic capacitance and circuit performance at 3 nm node A Pal, S Mittal, EM Bazizi, A Sachid, M Saremi, B Colombeau, G Thareja, ... 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 14 | 2019 |
| Source/drain extension doping engineering for variability suppression and performance enhancement in 3-nm node FinFETs P Lu, B Colombeau, S Hung, W Li, X Duan, Y Li, EM Bazizi, S Natarajan, ... IEEE Transactions on Electron Devices 68 (3), 1352-1357, 2021 | 13 | 2021 |
| Materials to systems co-optimization platform for rapid technology development targeting future generation CMOS nodes EM Bazizi, A Pal, J Kim, L Jiang, V Reddy, B Alexander, ... IEEE Transactions on Electron Devices 68 (11), 5358-5363, 2021 | 12 | 2021 |
| A cost-efficient 28nm split-gate eFLASH memory featuring a HKMG hybrid bit cell and HV device R Richter, M Trentzsch, S Dünkel, J Müller, P Moll, B Bayha, K Mothes, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.5. 1-18.5. 4, 2018 | 12 | 2018 |
| Complementary FET device and circuit level evaluation using fin-based and sheet-based configurations targeting 3nm node and beyond L Jiang, A Pal, EM Bazizi, M Saremi, H Ren, B Alexander, ... 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 11 | 2020 |
| Modelling of Boron Trapping at End-of-Range defects in pre-amorphized ultra-shallow junctions EM Bazizi, PF Fazzini, C Zechner, A Tsibizov, H Kheyrandish, A Pakfar, ... Materials Science and Engineering: B 154, 275-278, 2008 | 10 | 2008 |
| Semiconductor structure including a nonvolatile memory cell and method for the formation thereof A Zaka, S Beyer, T Herrmann, EM Bazizi US Patent 9,711,513, 2017 | 9 | 2017 |
| Semiconductor devices and methods of forming the semiconductor devices including a retrograde well EM Bazizi, F Benistant US Patent 8,994,107, 2015 | 9 | 2015 |
| TCAD simulation of the co-implantation species C, F, and N in MOS transistors EM Bazizi, KRC Mok, F Benistant, SH Yeong, RS Teo, C Zechner AIP Conference Proceedings 1496 (1), 249-252, 2012 | 8 | 2012 |
| Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs EM Bazizi, A Pakfar, PF Fazzini, F Cristiano, C Tavernier, A Claverie, ... Thin Solid Films 518 (9), 2427-2430, 2010 | 8 | 2010 |
| Modélisation physique et simulation de défauts étendus et diffusion des dopants dans le Si, SOI, SiGe pour les MOS avancés EM Bazizi Toulouse 3, 2010 | 7 | 2010 |
| Study of silicon–germanium interdiffusion from pure germanium deposited layers M Gavelle, EM Bazizi, E Scheid, C Armand, PF Fazzini, O Marcelot, ... Materials Science and Engineering: B 154, 110-113, 2008 | 7 | 2008 |
