Matthieu Berthomé
Matthieu Berthomé
Research Engineer at INRIA
Verified email at inria.fr
Title
Cited by
Cited by
Year
Scaling of trigate junctionless nanowire MOSFET with gate length down to 13 nm
S Barraud, M Berthome, R Coquand, M Cassé, T Ernst, MP Samson, ...
IEEE Electron Device Letters 33 (9), 1225-1227, 2012
1822012
Revisited parameter extraction methodology for electrical characterization of junctionless transistors
DY Jeon, SJ Park, M Mouis, M Berthomé, S Barraud, GT Kim, G Ghibaudo
Solid-State Electronics 90, 86-93, 2013
792013
Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor
E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu
Sensors and Actuators B: Chemical 183, 1-10, 2013
372013
Electrical characterization and revisited parameter extraction methodology in junctionless transistors
DY Jeon, SJ Park, M Mouis, M Berthomé, S Barraud, GT Kim, G Ghibaudo
Proc. EuroSOI, 109-110, 2012
162012
Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5nm
M Najmzadeh, M Berthomé, JM Sallese, W Grabinski, AM Ionescu
Solid-State Electronics 98, 55-62, 2014
142014
Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs
M Najmzadeh, JM Sallese, M Berthomé, W Grabinski, AM Ionescu
IEEE Transactions on Electron Devices 59 (12), 3519-3526, 2012
112012
Application-oriented performance of RF CMOS technologies on flexible substrates
J Philippe, A Lecavelier, M Berthomé, JF Robillard, C Gaquière, ...
2015 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2015
92015
Physically-based, multi-architecture, analytical model for junctionless transistors
M Berthomé, S Barraud, A Ionescu, T Ernst
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference …, 2011
62011
Focusing surface waves with an inhomogeneous metamaterial lens
MA Escobar, M Berthomé, C Ma, Z Liu
Applied optics 49 (7), A18-A22, 2010
52010
Mobility extraction assessment in GAA Si NW JL FETs with cross-section down to 5 nm
M Najmzadeh, JM Sallese, M Berthome, W Grabinski, AM Ionescu
2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013
42013
Mobility extraction assessment in GAA Si NW JL FETs with cross-section down to 5 nm
M Najmzadeh, JM Sallese, M Berthome, W Grabinski, AM Ionescu
2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013
42013
Large-area femtosecond laser ablation of Silicon to create membrane with high performance CMOS-SOI RF functions
A Bhaskar, J Philippe, M Berthomé, E Okada, JF Robillard, D Gloria, ...
2018 7th Electronic System-Integration Technology Conference (ESTC), 1-6, 2018
32018
Ultra-foldable/stretchable wideband RF interconnects using laser ablation of metal film on a flexible substrate
S Bouaziz, M Berthomé, JF Robillard, E Dubois
2015 European Microwave Conference (EuMC), 869-872, 2015
32015
Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding
E Dubois, J Philippe, M Berthomé, JF Robillard, C Gaquière, F Danneville, ...
2016 6th Electronic System-Integration Technology Conference (ESTC), 1-5, 2016
12016
Cost Effective Laser Structuration of Optical Waveguides on Thin Glass Interposer
JM Boucaud, FE Ayi-Yovo, Q Hivin, M Berthomé, C Durand, F Gianesello, ...
Journal of Lightwave Technology 35 (20), 4445-4450, 2017
2017
Ultrashort pulse laser processing as enabling technology for selectivity and ablation challenges in microelectronics
ED Matthieu Berthomé, Quentin Hivin, Jean-François Robillard
E-MRS 2016, 2016
2016
2011 12th International Conference on Ultimate Integration on Silicon (ULIS 2011)
M Berthomé, S Barraud, A Ionescu, T Ernst
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Articles 1–17