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Winston Chern
Winston Chern
Verified email at mit.edu
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Cited by
Cited by
Year
Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays
W Chern, K Hsu, IS Chun, BP Azeredo, N Ahmed, KH Kim, J Zuo, N Fang, ...
Nano letters 10 (5), 1582-1588, 2010
2432010
Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting
X Zhang, J Grajal, JL Vazquez-Roy, U Radhakrishna, X Wang, W Chern, ...
Nature 566 (7744), 368-372, 2019
1872019
Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching
M DeJarld, JC Shin, W Chern, D Chanda, K Balasundaram, JA Rogers, ...
Nano letters 11 (12), 5259-5263, 2011
1482011
Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs
RN Sajjad, W Chern, JL Hoyt, DA Antoniadis
IEEE Transactions on Electron Devices 63 (11), 4380-4387, 2016
942016
Experimental study of design parameters in silicon micropillar array solar cells produced by soft lithography and metal-assisted chemical etching
JC Shin, D Chanda, W Chern, KJ Yu, JA Rogers, X Li
IEEE Journal of photovoltaics 2 (2), 129-133, 2012
572012
Ultrathin Strained-Ge Channel P-MOSFETs With High-/Metal Gate and Sub-1-nm Equivalent Oxide Thickness
P Hashemi, W Chern, HS Lee, JT Teherani, Y Zhu, J Gonsalvez, ...
IEEE electron device letters 33 (7), 943-945, 2012
532012
Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates
JT Teherani, W Chern, DA Antoniadis, JL Hoyt, L Ruiz, CD Poweleit, ...
Physical Review B 85 (20), 205308, 2012
492012
High mobility high-κ-all-around asymmetrically-strained germanium nanowire trigate p-MOSFETs
W Chern, P Hashemi, JT Teherani, T Yu, Y Dong, G Xia, DA Antoniadis, ...
2012 International Electron Devices Meeting, 16.5. 1-16.5. 4, 2012
302012
Method of forming an array of high aspect ratio semiconductor nanostructures
X Li, PM Ferreira, W Chern, IS Chun, KH HSU
US Patent 8,980,656, 2015
262015
Auger generation as an intrinsic limit to tunneling field-effect transistor performance
JT Teherani, S Agarwal, W Chern, PM Solomon, E Yablonovitch, ...
Journal of Applied Physics 120 (8), 084507, 2016
222016
Metal assisted chemical etching to produce III-V semiconductor nanostructures
X Li, MT Dejarld, JC Shin, W Chern
US Patent 8,951,430, 2015
212015
High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOxgate stacks and strain modulation
R Zhang, W Chern, X Yu, M Takenaka, JL Hoyt, S Takagi
2013 IEEE International Electron Devices Meeting, 26.1. 1-26.1. 4, 2013
182013
On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures
Y Dong, W Chern, PM Mooney, JL Hoyt, GM Xia
Semiconductor Science and Technology 29 (1), 015012, 2013
142013
Cryogenic characterization of a ferroelectric field-effect-transistor
Z Wang, H Ying, W Chern, S Yu, M Mourigal, JD Cressler, AI Khan
Applied Physics Letters 116 (4), 042902, 2020
132020
Record hole mobility at high vertical fields in planar strained germanium on insulator with asymmetric strain
W Chern, P Hashemi, JT Teherani, DA Antoniadis, JL Hoyt
IEEE Electron Device Letters 35 (3), 309-311, 2014
132014
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
A Khakifirooz, R Sreenivasan, BN Taber, F Allibert, P Hashemi, W Chern, ...
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2013
112013
Temperature effects on gated silicon field emission array performance
R Bhattacharya, N Karaulac, W Chern, AI Akinwande, J Browning
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2021
82021
The impacts of ferroelectric and interfacial layer thicknesses on ferroelectric FET design
N Tasneem, MM Islam, Z Wang, H Chen, J Hur, D Triyoso, S Consiglio, ...
IEEE Electron Device Letters 42 (8), 1156-1159, 2021
72021
Ultraviolet light stimulated water desorption effect on emission performance of gated field emitter array
R Bhattacharya, N Karaulac, G Rughoobur, W Chern, AI Akinwande, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2021
62021
Simulation of enhanced hole ballistic velocity in asymmetrically strained Germanium nanowire trigate p-MOSFETs
JT Teherani, W Chern, DA Antoniadis, JL Hoyt
2013 IEEE International Electron Devices Meeting, 32.4. 1-32.4. 4, 2013
52013
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Articles 1–20