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Tommaso Brazzini
Tommaso Brazzini
Group of Energy, Economy and Systems Dynamics (GEEDS) - Universidad de Valladolid
Verifierad e-postadress på uva.es - Startsida
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Analysis of the potential for PV rooftop prosumer production: Technical, economic and environmental assessment for the city of Valencia (Spain)
T Gómez-Navarro, T Brazzini, D Alfonso-Solar, C Vargas-Salgado
Renewable Energy 174, 372-381, 2021
742021
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
S Pandey, D Cavalcoli, B Fraboni, A Cavallini, T Brazzini, F Calle
Applied Physics Letters 100 (15), 2012
302012
Mechanism of hot electron electroluminescence in GaN-based transistors
T Brazzini, H Sun, F Sarti, JW Pomeroy, C Hodges, M Gurioli, A Vinattieri, ...
Journal of Physics D: Applied Physics 49 (43), 435101, 2016
282016
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
T Brazzini, A Bengoechea-Encabo, MA Sánchez-García, F Calle
Sensors and Actuators B: Chemical 176, 704-707, 2013
272013
Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation
T Brazzini, MA Casbon, H Sun, MJ Uren, J Lees, PJ Tasker, H Jung, ...
Applied Physics Letters 106 (21), 2015
232015
Learnings from local collaborative transformations: Setting a basis for a sustainability framework
P Macedo, A Huertas, C Bottone, J del Río, N Hillary, T Brazzini, ...
Sustainability 12 (3), 795, 2020
152020
Hot-electron electroluminescence under RF operation in GaN-HEMTs: A comparison among operational classes
T Brazzini, MA Casbon, MJ Uren, PJ Tasker, H Jung, H Blanck, M Kuball
IEEE Transactions on Electron Devices 64 (5), 2155-2160, 2017
112017
Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence
T Brazzini, MA Casbon, H Sun, MJ Uren, J Lees, PJ Tasker, H Jung, ...
Microelectronics Reliability 55 (12), 2493-2498, 2015
102015
Nanocrack-induced leakage current in AlInN/AlN/GaN
A Minj, D Cavalcoli, S Pandey, B Fraboni, A Cavallini, T Brazzini, F Calle
Scripta Materialia 66 (6), 327-330, 2012
92012
Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers
GR Mutta, JM Routoure, B Guillet, L Méchin, J Grandal, S Martin-Horcajo, ...
Applied Physics Letters 98 (25), 2011
92011
Surface origin and control of resonance Raman scattering and surface band gap in indium nitride
E Alarcón-Lladó, T Brazzini, JW Ager
Journal of Physics D: Applied Physics 49 (25), 255102, 2016
82016
Impact of AlN spacer on metal–semiconductor–metal Pt–InAlGaN/GaN heterostructures for ultraviolet detection
T Brazzini, S Pandey, MF Romero, PY Bokov, M Feneberg, G Tabares, ...
Japanese Journal of Applied Physics 52 (8S), 08JK04, 2013
72013
Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
PY Bokov, T Brazzini, MF Romero, F Calle, M Feneberg, R Goldhahn
Semiconductor Science and Technology 30 (8), 085014, 2015
52015
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
T Brazzini, MJ Tadjer, Ž Gačević, S Pandey, A Cavallini, F Calle
Semiconductor science and technology 28 (5), 055007, 2013
42013
Measuring the discomfort of energy vulnerable elderly people. Recommendations for solutions
NG Lepetit, E Biard, I Aparisi-Cerdá, T Brazzini, C Montagud, ...
IOP Conference Series: Earth and Environmental Science 1085 (1), 012016, 2022
32022
Influence of fabrication steps on optical and electrical properties of InN thin films
GR Mutta, T Brazzini, L Mechin, B Guillet, JM Routoure, JL Doualan, ...
Semiconductor Science and Technology 29 (9), 095010, 2014
22014
Analysis of InAl (Ga) N/GaN wet-etching by structural, morphological and electrical methods
T Brazzini, S Martin-Horcajo, MF Romero, Ž Gacěvić, F Calle
Semiconductor science and technology 29 (7), 075003, 2014
22014
Simultaneous measurement of optical and RF behavior under CW and pulsed fully active harmonic load-pull
MA Casbon, T Brazzini, PJ Tasker, M Uren, M Kuball
2016 87th ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2016
12016
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
T Brazzini, A Bengoechea Encabo, MA Sánchez García, F Calle Gómez
Isom, 2012
12012
Reliability challenges for GaN-based FETs
M Kuball, MJ Uren, JW Pomeroy, S Karboyan, I Chatterjee, D Liu, J Anaya, ...
The Japan Society of Applied Physics, 2016
2016
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Artiklar 1–20