Reverse engineering gene regulatory networks Y Huang, IM Tienda-Luna, Y Wang IEEE Signal Processing Magazine 26 (1), 76-97, 2009 | 42 | 2009 |

Modeling the equivalent oxide thickness of surrounding gate SOI devices with high-κ insulators IM Tienda-Luna, FJG Ruiz, L Donetti, A Godoy, F Gámiz Solid-State Electronics 52 (12), 1854-1860, 2008 | 36 | 2008 |

A Bayesian framework for the inference of gene regulatory networks from time and pseudo-time series data M Sanchez-Castillo, D Blanco, IM Tienda-Luna, MC Carrion, Y Huang Bioinformatics 34 (6), 964-970, 2018 | 29 | 2018 |

Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- Insulators FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gámiz IEEE Transactions on Electron Devices 56 (11), 2711-2719, 2009 | 29 | 2009 |

Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors EG Marin, FG Ruiz, IM Tienda-Luna, A Godoy, P Sánchez-Moreno, ... Journal of Applied Physics 112 (8), 084512, 2012 | 25 | 2012 |

Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond C Sampedro, F Gámiz, A Godoy, R Valín, A García-Loureiro, N Rodríguez, ... Solid-State Electronics 65, 88-93, 2011 | 23 | 2011 |

Surface roughness scattering model for arbitrarily oriented silicon nanowires IM Tienda-Luna, FG Ruiz, A Godoy, B Biel, F Gámiz Journal of Applied Physics 110 (8), 084514, 2011 | 23 | 2011 |

A survey of statistical models for reverse engineering gene regulatory networks Y Huang, IM Tienda-Luna, Y Wang IEEE signal processing magazine 26 (1), 76, 2009 | 20 | 2009 |

Analytical gate capacitance modeling of III–V nanowire transistors EG Marin, FJG Ruiz, IM Tienda-Luna, A Godoy, F Gámiz IEEE transactions on electron devices 60 (5), 1590-1599, 2013 | 18 | 2013 |

Inferring the skeleton cell cycle regulatory network of malaria parasite using comparative genomic and variational Bayesian approaches IM Tienda-Luna, Y Yin, MC Carrion, Y Huang, H Cai, M Sanchez, Y Wang Genetica 132 (2), 131-142, 2008 | 17 | 2008 |

Influence of orientation, geometry, and strain on electron distribution in silicon gate-all-around (GAA) MOSFETs IM Tienda-Luna, FJG Ruiz, A Godoy, B Biel, F Gamiz IEEE transactions on electron devices 58 (10), 3350-3357, 2011 | 16 | 2011 |

A model of the gate capacitance of surrounding gate transistors: Comparison with double-gate MOSFETs FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gamiz IEEE transactions on electron devices 57 (10), 2477-2483, 2010 | 16 | 2010 |

A compact quantum model for fin-shaped field effect transistors valid from dc to high frequency and noise simulations A Lazaro, B Nae, B Ińiguez, F Garcia, IM Tienda-Luna, A Godoy Journal of Applied Physics 103 (8), 084507, 2008 | 12 | 2008 |

Mobility and capacitance comparison in scaled InGaAs versus Si trigate MOSFETs EG Marin, FG Ruiz, A Godoy, IM Tienda-Luna, F Gámiz IEEE Electron Device Letters 36 (2), 114-116, 2014 | 9 | 2014 |

Impact of the back-gate biasing on trigate MOSFET electron mobility EG Marin, FG Ruiz, A Godoy, IM Tienda-Luna, C Martinez-Blanque, ... IEEE Transactions on Electron Devices 62 (1), 224-227, 2014 | 8 | 2014 |

Iterative decoding in factor graph representation using particle filtering IM Tienda-Luna, DP Ruiz, MC Carrion, Y Huang IEEE 6th Workshop on Signal Processing Advances in Wireless Communications …, 2005 | 8* | 2005 |

Theoretical interpretation of the electron mobility behavior in InAs nanowires EG Marin, FG Ruiz, A Godoy, IM Tienda-Luna, C Martínez-Blanque, ... Journal of Applied Physics 116 (17), 174505, 2014 | 7 | 2014 |

Pseudo-Boltzmann model for modeling the junctionless transistors F Avila-Herrera, A Cerdeira, JB Roldan, P Sánchez-Moreno, ... Solid-state electronics 95, 19-22, 2014 | 7 | 2014 |

Effect of confined acoustic phonons on the electron mobility of rectangular nanowires IM Tienda-Luna, FG Ruiz, A Godoy, L Donetti, C Martinez-Blanque, ... Applied Physics Letters 103 (16), 163107, 2013 | 7 | 2013 |

Analytical model for the threshold voltage of III–V nanowire transistors including quantum effects EG Marin, FG Ruiz, IM Tienda-Luna, A Godoy, F Gámiz Solid-state electronics 92, 28-34, 2014 | 6 | 2014 |