| Nickel based ohmic contacts on SiC T Marinova, A Kakanakova-Georgieva, V Krastev, R Kakanakov, ... Materials Science and Engineering: B 46 (1-3), 223-226, 1997 | 150 | 1997 |
| Growth of 6H and 4H–SiC by sublimation epitaxy M Syväjärvi, R Yakimova, M Tuominen, A Kakanakova-Georgieva, ... Journal of Crystal Growth 197 (1-2), 155-162, 1999 | 119 | 1999 |
| Defects in hexagonal-AlN sheets by first-principles calculations EF De Almeida, F de Brito Mota, CMC de Castilho, ... The European Physical Journal B 85, 1-9, 2012 | 115 | 2012 |
| Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C (V) characterization of metal-insulator-semiconductor … M Fagerlind, F Allerstam, EÖ Sveinbjörnsson, N Rorsman, ... Journal of Applied Physics 108 (1), 2010 | 112 | 2010 |
| Topological insulating phases in two-dimensional bismuth-containing single layers preserved by hydrogenation RRQ Freitas, R Rivelino, F de Brito Mota, CMC De Castilho, ... The Journal of Physical Chemistry C 119 (41), 23599-23606, 2015 | 108 | 2015 |
| Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties RB Dos Santos, F de Brito Mota, R Rivelino, A Kakanakova-Georgieva, ... Nanotechnology 27 (14), 145601, 2016 | 101 | 2016 |
| Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ... IEEE Electron Device Letters 30 (2), 103-106, 2008 | 98 | 2008 |
| Ab initio molecular dynamics of atomic-scale surface reactions: Insights into metal organic chemical vapor deposition of AlN on graphene DG Sangiovanni, GK Gueorguiev, A Kakanakova-Georgieva Physical Chemistry Chemical Physics 20 (26), 17751-17761, 2018 | 82 | 2018 |
| Electrochemical deposition of thin zirconia films on stainless steel 316 L P Stefanov, D Stoychev, I Valov, A Kakanakova-Georgieva, T Marinova Materials Chemistry and Physics 65 (2), 222-225, 2000 | 74 | 2000 |
| Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material D Nilsson, E Janzén, A Kakanakova-Georgieva Journal of Physics D: Applied Physics 49 (17), 175108, 2016 | 71 | 2016 |
| Stable and metastable Si negative-U centers in AlGaN and AlN XT Trinh, D Nilsson, IG Ivanov, E Janzén, A Kakanakova-Georgieva, ... Applied Physics Letters 105 (16), 2014 | 71 | 2014 |
| Hot-wall MOCVD for highly efficient and uniform growth of AlN A Kakanakova-Georgieva, RR Ciechonski, U Forsberg, A Lundskog, ... Crystal Growth and Design 9 (2), 880-884, 2009 | 62 | 2009 |
| Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface A Kakanakova-Georgieva, GK Gueorguiev, DG Sangiovanni, ... Nanoscale 12 (37), 19470-19476, 2020 | 61 | 2020 |
| High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures A Kakanakova-Georgieva, D Nilsson, E Janzén Journal of crystal growth 338 (1), 52-56, 2012 | 59 | 2012 |
| Sublimation growth of AlN crystals: Growth mode and structure evolution R Yakimova, A Kakanakova-Georgieva, GR Yazdi, GK Gueorguiev, ... Journal of crystal growth 281 (1), 81-86, 2005 | 59 | 2005 |
| Indium nitride at the 2D limit B Pécz, G Nicotra, F Giannazzo, R Yakimova, A Koos, ... Advanced Materials 33 (1), 2006660, 2021 | 58 | 2021 |
| A perspective on thermal stability and mechanical properties of 2D Indium Bismide from ab initio molecular dynamics C Lundgren, A Kakanakova-Georgieva, GK Gueorguiev Nanotechnology 33 (33), 335706, 2022 | 56 | 2022 |
| Material proposal for 2D indium oxide A Kakanakova-Georgieva, F Giannazzo, G Nicotra, I Cora, ... Applied Surface Science 548, 149275, 2021 | 56 | 2021 |
| MOCVD of AlN on epitaxial graphene at extreme temperatures A Kakanakova-Georgieva, IG Ivanov, N Suwannaharn, CW Hsu, I Cora, ... CrystEngComm 23 (2), 385-390, 2021 | 53 | 2021 |
| Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi3 (X= B, Al, Ga, and In) sheets RRQ Freitas, F de Brito Mota, R Rivelino, CMC De Castilho, ... Journal of Physics: Condensed Matter 27 (48), 485306, 2015 | 51 | 2015 |
