| Quantum dot nanostructures and molecular beam epitaxy S Franchi, G Trevisi, L Seravalli, P Frigeri Progress in Crystal Growth and Characterization of Materials 47 (2-3), 166-195, 2003 | 129 | 2003 |
| Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions M Bosi, P Mazzolini, L Seravalli, R Fornari Journal of Materials Chemistry C 8 (32), 10975-10992, 2020 | 120 | 2020 |
| Exciton and trion in few-layer MoS2: Thickness-and temperature-dependent photoluminescence S Golovynskyi, I Irfan, M Bosi, L Seravalli, OI Datsenko, I Golovynska, B Li, ... Applied Surface Science 515, 146033, 2020 | 118 | 2020 |
| The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures L Seravalli, M Minelli, P Frigeri, P Allegri, V Avanzini, S Franchi Applied physics letters 82 (14), 2341-2343, 2003 | 111 | 2003 |
| Quantum dot strain engineering of< equation>< font face='verdana'> In</font>< font face='verdana'> As</font>/< font face='verdana'> In</font>< font face='verdana'> Ga</font … L Seravalli, M Minelli, P Frigeri, S Franchi, G Guizzetti, M Patrini, ... Journal of applied physics 101 (2), 024313-024313-8, 2007 | 90* | 2007 |
| Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 μm L Seravalli, P Frigeri, M Minelli, P Allegri, V Avanzini, S Franchi Applied Physics Letters 87 (6), 2005 | 68 | 2005 |
| Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates L Seravalli, G Trevisi, P Frigeri, D Rivas, G Munoz-Matutano, I Suarez, ... Applied physics letters 98 (17), 2011 | 67 | 2011 |
| 1.59 μm room temperature emission from metamorphic InAs∕ InGaAs quantum dots grown on GaAs substrates L Seravalli, P Frigeri, G Trevisi, S Franchi Applied Physics Letters 92 (21), 2008 | 62 | 2008 |
| Carrier thermodynamics in quantum dots S Sanguinetti, D Colombo, M Guzzi, E Grilli, M Gurioli, L Seravalli, ... Physical Review B—Condensed Matter and Materials Physics 74 (20), 205302, 2006 | 58 | 2006 |
| Molecular beam epitaxy: an overview P Frigeri, L Seravalli, G Trevisi, S Franchi Elsevier, 2016 | 52 | 2016 |
| Defect passivation in strain engineered InAs/(InGa) As quantum dots S Mazzucato, D Nardin, M Capizzi, A Polimeni, A Frova, L Seravalli, ... Materials Science and Engineering: C 25 (5-8), 830-834, 2005 | 50 | 2005 |
| The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures L Seravalli, G Trevisi, P Frigeri, S Franchi, M Geddo, G Guizzetti Nanotechnology 20 (27), 275703, 2009 | 48 | 2009 |
| Effects of the quantum dot ripening in high-coverage InAs∕ GaAs nanostructures P Frigeri, L Nasi, M Prezioso, L Seravalli, G Trevisi, E Gombia, R Mosca, ... Journal of Applied Physics 102 (8), 2007 | 48 | 2007 |
| Full Dynamic Control of In-plane Elastic Stress Tensor in Nanomembranes J Martín-Sánchez, R Trotta, G Piredda, C Schimpf, G Trevisi, L Seravalli, ... arXiv preprint arXiv:1511.08192, 2015 | 46 | 2015 |
| A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes L Seravalli, M Bosi Materials 14 (24), 7590, 2021 | 43 | 2021 |
| Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping J Gomis-Bresco, G Muñoz-Matutano, J Martínez-Pastor, B Alén, ... New Journal of physics 13 (2), 023022, 2011 | 43 | 2011 |
| Metamorphic quantum dots: quite different nanostructures L Seravalli, P Frigeri, L Nasi, G Trevisi, C Bocchi Journal of Applied Physics 108 (6), 2010 | 43 | 2010 |
| Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and … I Irfan, S Golovynskyi, M Bosi, L Seravalli, OA Yeshchenko, B Xue, ... The Journal of Physical Chemistry C 125 (7), 4119-4132, 2021 | 41 | 2021 |
| Residual strain measurements in InGaAs metamorphic buffer layers on GaAs V Bellani, C Bocchi, T Ciabattoni, S Franchi, P Frigeri, P Galinetto, ... The European Physical Journal B 56, 217-222, 2007 | 40 | 2007 |
| Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 μm: effects of InGaAs capping L Seravalli, C Bocchi, G Trevisi, P Frigeri Journal of Applied Physics 108 (11), 2010 | 38 | 2010 |
Sergii GolovynskyiCollege of Optoelectronic Engineering, Shenzhen UniversityVerified email at szu.edu.cn
