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Mohammad Karbalaei
Mohammad Karbalaei
Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, Iran.
Verified email at grad.kashanu.ac.ir
Title
Cited by
Cited by
Year
Improvement in electrical characteristics of Silicon on Insulator (SOI) transistor using graphene material
M Karbalaei, D Dideban, H Heidari
Results in Physics 15, 102806, 2019
292019
A novel silicon on insulator MOSFET with an embedded heat pass path and source side channel doping
M Karbalaei, D Dideban
Superlattices and Microstructures 90, 53-67, 2016
282016
A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics
M Karbalaei, D Dideban, H Heidari
Ain Shams Engineering Journal 12 (1), 755-760, 2021
222021
Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study
M Karbalaei, D Dideban, H Heidari
Results in Physics 16, 102823, 2020
222020
A scheme for silicon on insulator field effect transistor with improved performance using graphene
M Karbalaei, D Dideban
ECS Journal of Solid State Science and Technology 8 (9), M85, 2019
102019
A nanoscale silicon on insulator transistor with superior performance using dual material gate and retrograde/halo doping in source/drain sides
M Karbalaei, D Dideban
Journal of Physics and Chemistry of Solids 138, 109247, 2020
92020
Comparison of the I–V characteristics of a topological insulator quantum well resonant tunneling transistor and its conventional counterpart: A TCAD simulation study
D Dideban, M Karbalaei
Journal of Physics and Chemistry of Solids 128, 374-377, 2019
92019
Improvement of tunnel field effect transistor performance using auxiliary gate and retrograde doping in the channel
M Karbalaei, D Dideban, N Moezi
Journal of Electrical and Computer Engineering Innovations (JECEI) 7 (1), 27-33, 2018
82018
Influence of source stack and heterogeneous gate dielectric on band to band tunneling rate of tunnel FET
M Karbalaei, D Dideban
Silicon 12 (8), 1811-1817, 2020
52020
Improvement of a nano-scale silicon on insulator field effect transistor performance using electrode, doping and buried oxide engineering
D Dideban, M Karbalaei, N Moezi, H Heidari
Journal of Nanostructures 10 (2), 317-326, 2020
52020
Predictive physics based simulation of nano scale gate-all-around field effect transistor under the influence of high-k gate dielectrics
N Moezi, M Karbalaei
Journal of Nanostructures 10 (4), 736-743, 2020
42020
A simulation study of the influence of a high-k insulator and source stack on the performance of a double-gate tunnel FET
M Karbalaei, D Dideban, H Heidari
Journal of Computational Electronics 19, 1077-1084, 2020
42020
A nano-FET structure comprised of inherent paralleled TFET and MOSFET with improved performance
M Karbalaei, D Dideban, H Heidari
Ain Shams Engineering Journal 11 (4), 1105-1112, 2020
32020
Influence of high-k insulator and source stack on the performance of a double gate tunnel FET: a simulation study
M Karbalaei, D Dideban, H Heidari
Journal of Computational Electronics 19, 1077-1084, 2020
32020
Impact of auxiliary gate work function on boosting electrical performance of a gate-all-around field effect transistor with emphasis on the scaling behavior
M Karbalaei, D Dideban, Z Ramezani, IS Amiri
Journal of Physics and Chemistry of Solids 156, 110134, 2021
22021
Implementing expanded source doping to improve performance of a nano-scale fully depleted silicon on insulator transistor
M Karbalaei, D Dideban
Journal of Nanostructures 10 (3), 540-552, 2020
2020
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Articles 1–16