Improvement in electrical characteristics of Silicon on Insulator (SOI) transistor using graphene material M Karbalaei, D Dideban, H Heidari Results in Physics 15, 102806, 2019 | 29 | 2019 |
A novel silicon on insulator MOSFET with an embedded heat pass path and source side channel doping M Karbalaei, D Dideban Superlattices and Microstructures 90, 53-67, 2016 | 28 | 2016 |
A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics M Karbalaei, D Dideban, H Heidari Ain Shams Engineering Journal 12 (1), 755-760, 2021 | 22 | 2021 |
Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study M Karbalaei, D Dideban, H Heidari Results in Physics 16, 102823, 2020 | 22 | 2020 |
A scheme for silicon on insulator field effect transistor with improved performance using graphene M Karbalaei, D Dideban ECS Journal of Solid State Science and Technology 8 (9), M85, 2019 | 10 | 2019 |
A nanoscale silicon on insulator transistor with superior performance using dual material gate and retrograde/halo doping in source/drain sides M Karbalaei, D Dideban Journal of Physics and Chemistry of Solids 138, 109247, 2020 | 9 | 2020 |
Comparison of the I–V characteristics of a topological insulator quantum well resonant tunneling transistor and its conventional counterpart: A TCAD simulation study D Dideban, M Karbalaei Journal of Physics and Chemistry of Solids 128, 374-377, 2019 | 9 | 2019 |
Improvement of tunnel field effect transistor performance using auxiliary gate and retrograde doping in the channel M Karbalaei, D Dideban, N Moezi Journal of Electrical and Computer Engineering Innovations (JECEI) 7 (1), 27-33, 2018 | 8 | 2018 |
Influence of source stack and heterogeneous gate dielectric on band to band tunneling rate of tunnel FET M Karbalaei, D Dideban Silicon 12 (8), 1811-1817, 2020 | 5 | 2020 |
Improvement of a nano-scale silicon on insulator field effect transistor performance using electrode, doping and buried oxide engineering D Dideban, M Karbalaei, N Moezi, H Heidari Journal of Nanostructures 10 (2), 317-326, 2020 | 5 | 2020 |
Predictive physics based simulation of nano scale gate-all-around field effect transistor under the influence of high-k gate dielectrics N Moezi, M Karbalaei Journal of Nanostructures 10 (4), 736-743, 2020 | 4 | 2020 |
A simulation study of the influence of a high-k insulator and source stack on the performance of a double-gate tunnel FET M Karbalaei, D Dideban, H Heidari Journal of Computational Electronics 19, 1077-1084, 2020 | 4 | 2020 |
A nano-FET structure comprised of inherent paralleled TFET and MOSFET with improved performance M Karbalaei, D Dideban, H Heidari Ain Shams Engineering Journal 11 (4), 1105-1112, 2020 | 3 | 2020 |
Influence of high-k insulator and source stack on the performance of a double gate tunnel FET: a simulation study M Karbalaei, D Dideban, H Heidari Journal of Computational Electronics 19, 1077-1084, 2020 | 3 | 2020 |
Impact of auxiliary gate work function on boosting electrical performance of a gate-all-around field effect transistor with emphasis on the scaling behavior M Karbalaei, D Dideban, Z Ramezani, IS Amiri Journal of Physics and Chemistry of Solids 156, 110134, 2021 | 2 | 2021 |
Implementing expanded source doping to improve performance of a nano-scale fully depleted silicon on insulator transistor M Karbalaei, D Dideban Journal of Nanostructures 10 (3), 540-552, 2020 | | 2020 |