| Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy JY Zhang, IW Boyd, BJ O'sullivan, PK Hurley, PV Kelly, JP Senateur Journal of Non-Crystalline Solids 303 (1), 134-138, 2002 | 165 | 2002 |
| Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre Applied physics letters 96 (15), 152908, 2010 | 163 | 2010 |
| Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes AG Scheuermann, JP Lawrence, KW Kemp, T Ito, A Walsh, CED Chidsey, ... Nature materials 15 (1), 99-105, 2016 | 156 | 2016 |
| Navigation aids in the search for future high-k dielectrics: Physical and electrical trends O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ... Solid-State Electronics 51 (4), 622-626, 2007 | 150 | 2007 |
| A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0 … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ... Journal of Applied Physics 109 (2), 024101, 2011 | 142 | 2011 |
| Temperature and frequency dependent electrical characterization of interfaces using capacitance-voltage and conductance methods É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ... Applied Physics Letters 94 (10), 102902, 2009 | 119 | 2009 |
| Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk Solid-State Electronics 53 (4), 438-444, 2009 | 99 | 2009 |
| interface properties following rapid thermal processing BJ O’sullivan, PK Hurley, C Leveugle, JH Das Journal of Applied Physics 89 (7), 3811-3820, 2001 | 88 | 2001 |
| Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ... Thin Solid Films 428 (1-2), 263-268, 2003 | 71 | 2003 |
| Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ... Journal of Applied Physics 120 (12), 125102, 2016 | 69 | 2016 |
| In situ passivation of metal-oxide-semiconductor capacitors with atomic-layer deposited gate dielectric E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ... Applied Physics Letters 92 (2), 022902, 2008 | 69 | 2008 |
| Wide spectral photoresponse of layered platinum diselenide-based photodiodes C Yim, N McEvoy, S Riazimehr, DS Schneider, F Gity, S Monaghan, ... Nano letters 18 (3), 1794-1800, 2018 | 67 | 2018 |
| Electrical, structural, and chemical properties of films formed by electron beam evaporation K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ... Journal of Applied Physics 104 (6), 064113, 2008 | 67 | 2008 |
| Structural and electrical analysis of the atomic layer deposition of capacitors with and without an interface control layer A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ... Applied Physics Letters 97 (5), 052904, 2010 | 61 | 2010 |
| Interface of ultrathin HfO2 films deposited by UV-photo-CVD Q Fang, JY Zhang, Z Wang, M Modreanu, BJ O'Sullivan, PK Hurley, ... Thin Solid Films 453, 203-207, 2004 | 61 | 2004 |
| Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, IM Povey, ... IEEE transactions on electron devices 59 (4), 1084, 2012 | 57 | 2012 |
| Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment É O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley Applied Physics Letters 99 (21), 212901, 2011 | 55 | 2011 |
| Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ... Journal of the Electrochemical Society 155 (2), G13, 2007 | 53 | 2007 |
| An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ... Journal of Applied Physics 114 (14), 144105, 2013 | 51 | 2013 |
| Half-cycle atomic layer deposition reaction study using O3 and H2O oxidation of Al2O3 on In0. 53Ga0. 47As B Brennan, M Milojevic, HC Kim, PK Hurley, J Kim, G Hughes, ... Electrochemical and Solid State Letters 12 (6), H205, 2009 | 49 | 2009 |
