Follow
James T. Teherani
James T. Teherani
GaN Device Development and Process Integration Engineer, Texas Instruments
Verified email at ti.com - Homepage
Title
Cited by
Cited by
Year
Transferred via contacts as a platform for ideal two-dimensional transistors
Y Jung, MS Choi, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ...
Nature Electronics 2 (5), 187-194, 2019
1052019
Engineering the electron–hole bilayer tunneling field-effect transistor
S Agarwal, JT Teherani, JL Hoyt, DA Antoniadis, E Yablonovitch
IEEE Transactions on Electron Devices 61 (5), 1599-1606, 2014
642014
Ultrathin Strained-Ge Channel P-MOSFETs With High-K/Metal Gate and Sub-1-nm Equivalent Oxide Thickness
O Hashemi, W Chern, H Lee, JT Teherani, Y Zhu, J Gonsalvez, ...
Electron Device Letters, IEEE 33 (7), 943-945, 2012
532012
Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates
JT Teherani, W Chern, DA Antoniadis, JL Hoyt, L Ruiz, CD Poweleit, ...
Physical Review B 85 (20), 205308, 2012
502012
Absence of a Band Gap at Metal-Monolayer MoS2 Interface
A Kerelsky, A Nipane, D Edelberg, D Wang, X Zhou, A Dadgar, H Gao, ...
arXiv preprint arXiv:1705.08478, 2017
43*2017
Electrical characterization of 2D materials-based field-effect transistors
SB Mitta, MS Choi, A Nipane, F Ali, C Kim, JT Teherani, J Hone, WJ Yoo
2D Materials 8 (1), 012002, 2020
412020
Impact of quantization energy and gate leakage in bilayer tunneling transistors
JT Teherani, S Agarwal, E Yablonovitch, JL Hoyt, DA Antoniadis
IEEE Electron Device Letters 34 (2), 298-300, 2013
402013
Electrostatics of lateral pn junctions in atomically thin materials
A Nipane, S Jayanti, A Borah, JT Teherani
Journal of Applied Physics 122 (19), 194501, 2017
392017
In(0.53)Ga(0.47)As/GaAs(0.5)Sb(0.5) Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics
T Yu, JT Teherani, DA Antoniadis, JL Hoyt
IEEE Electron Device Letters 34 (12), 1503-1505, 2013
35*2013
High-operating-temperature MWIR detector diodes
HF Schaake, MA Kinch, D Chandra, F Aqariden, PK Liao, DF Weirauch, ...
Journal of Electronic Materials 37 (9), 1401-1405, 2008
312008
High mobility high-κ-all-around asymmetrically-strained germanium nanowire trigate p-MOSFETs
W Chern, P Hashemi, JT Teherani, T Yu, Y Dong, G Xia, DA Antoniadis, ...
2012 International Electron Devices Meeting, 16.5. 1-16.5. 4, 2012
302012
Auger generation as an intrinsic limit to tunneling field-effect transistor performance
JT Teherani, S Agarwal, W Chern, PM Solomon, E Yablonovitch, ...
Journal of Applied Physics 120 (8), 084507, 2016
222016
Effect of Uniaxial Strain on the Drain Current of a Heterojunction Tunneling Field-Effect Transistor
PM Solomon, I Lauer, A Majumdar, JT Teherani, M Luisier, J Cai, ...
Electron Device Letters, IEEE 32 (4), 464-466, 2011
222011
Performance and modeling of the MWIR HgCdTe electron avalanche photodiode
J Beck, R Scritchfield, B Sullivan, J Teherani, CF Wan, M Kinch, M Ohlson, ...
Journal of electronic materials 38 (8), 1579-1592, 2009
192009
The device level modulation of carrier transport in a 2D WSe 2 field effect transistor via a plasma treatment
I Moon, S Lee, M Lee, C Kim, D Seol, Y Kim, KH Kim, GY Yeom, ...
Nanoscale 11 (37), 17368-17375, 2019
182019
Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-к/metal-gate: effects of hydrogen thermal annealing and nanowire shape
P Hashemi, JT Teherani, JL Hoyt
2010 International Electron Devices Meeting, 34.5. 1-34.5. 4, 2010
172010
Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices
A Nipane, MS Choi, PJ Sebastian, K Yao, A Borah, P Deshmukh, Y Jung, ...
ACS Applied Materials & Interfaces 13 (1), 1930-1942, 2020
142020
Resonant tunnelling diodes based on twisted black phosphorus homostructures
PK Srivastava, Y Hassan, DJP de Sousa, Y Gebredingle, M Joe, F Ali, ...
Nature Electronics 4 (4), 269-276, 2021
132021
Record hole mobility at high vertical fields in planar strained germanium on insulator with asymmetric strain
W Chern, P Hashemi, JT Teherani, DA Antoniadis, JL Hoyt
IEEE Electron Device Letters 35 (3), 309-311, 2014
132014
Band-to-band tunneling in silicon diodes and tunnel transistors
JT Teherani
Massachusetts Institute of Technology, 2010
132010
The system can't perform the operation now. Try again later.
Articles 1–20