Följ
Shinichi Takagi
Shinichi Takagi
Verifierad e-postadress på ee.t.u-tokyo.ac.jp
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Citeras av
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On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
S Takagi, A Toriumi, M Iwase, H Tango
IEEE Transactions on Electron Devices 41 (12), 2357-2362, 1994
16461994
Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
S Takagi, JL Hoyt, JJ Welser, JF Gibbons
Journal of Applied Physics 80 (3), 1567-1577, 1996
6061996
Method of manufacturing a substrate using an SiGe layer
N Sugiyama, A Kurobe, T Tezuka, T Mizuno, S Takagi
US Patent 6,607,948, 2003
4942003
On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation
S Takagi, A Toriumi, M Iwase, H Tango
IEEE Transactions on Electron Devices 41 (12), 2363-2368, 1994
4431994
Carrier-transport-enhanced channel CMOS for improved power consumption and performance
S Takagi, T Iisawa, T Tezuka, T Numata, S Nakaharai, N Hirashita, ...
IEEE transactions on electron devices 55 (1), 21-39, 2007
4332007
Evidence of low interface trap density in GeO2∕ Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
H Matsubara, T Sasada, M Takenaka, S Takagi
Applied physics letters 93 (3), 2008
4082008
Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
T Tezuka, N Sugiyama, S Takagi
Applied Physics Letters 79 (12), 1798-1800, 2001
4012001
Strain dependence of the performance enhancement in strained-Si n-MOSFETs
J Welser, JL Hoyt, SI Takagi, JF Gibbons
Proceedings of 1994 IEEE International Electron Devices Meeting, 373-376, 1994
3881994
Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
S Nakaharai, T Tezuka, N Sugiyama, Y Moriyama, S Takagi
Applied Physics Letters 83 (17), 3516-3518, 2003
3502003
Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm
K Uchida, H Watanabe, A Kinoshita, J Koga, T Numata, S Takagi
Digest. International Electron Devices Meeting,, 47-50, 2002
3132002
Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
T Mizuno, S Takagi, N Sugiyama, H Satake, A Kurobe, A Toriumi
IEEE Electron Device Letters 21 (5), 230-232, 2000
2942000
A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub-100 nm strained silicon-on-insulator MOSFETs
T Tezuka, N Sugiyama, T Mizuno, M Suzuki, S Takagi
Japanese Journal of Applied Physics 40 (4S), 2866, 2001
2892001
High-Mobility Ge pMOSFET With 1-nm EOT Gate Stack Fabricated by Plasma Post Oxidation
R Zhang, T Iwasaki, N Taoka, M Takenaka, S Takagi
IEEE Transactions on Electron Devices 59 (2), 335-341, 2011
283*2011
Bending experiment on pentacene field-effect transistors on plastic films
T Sekitani, Y Kato, S Iba, H Shinaoka, T Someya, T Sakurai, S Takagi
Applied Physics Letters 86 (7), 2005
2772005
Semiconductor device
S Takagi
US Patent 6,339,232, 2002
2532002
Semiconductor device
N Sugiyama, T Tezuka, T Mizuno, S Takagi
US Patent 6,774,390, 2004
2522004
High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using Gate Stacks Fabricated by Plasma Postoxidation
R Zhang, PC Huang, JC Lin, N Taoka, M Takenaka, S Takagi
IEEE Transactions on Electron Devices 60 (3), 927-934, 2013
2292013
Experimental evidence of inelastic tunneling in stress-induced leakage current
S Takagi, N Yasuda, A Toriumi
IEEE Transactions on Electron Devices 46 (2), 335-341, 1999
2201999
Efficient low-loss InGaAsP/Si hybrid MOS optical modulator
JH Han, F Boeuf, J Fujikata, S Takahashi, S Takagi, M Takenaka
Nature Photonics 11 (8), 486-490, 2017
2132017
Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation
R Zhang, T Iwasaki, N Taoka, M Takenaka, S Takagi
Applied Physics Letters 98 (11), 2011
2092011
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Artiklar 1–20