Thibault Sohier
Thibault Sohier
Nanomat, University of Liège, Belgium
Verified email at uliege.be - Homepage
Title
Cited by
Cited by
Year
Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
N Mounet, M Gibertini, P Schwaller, D Campi, A Merkys, A Marrazzo, ...
Nature nanotechnology 13 (3), 246-252, 2018
8622018
Electron–phonon interactions and the intrinsic electrical resistivity of graphene
CH Park, N Bonini, T Sohier, G Samsonidze, B Kozinsky, M Calandra, ...
Nano letters 14 (3), 1113-1119, 2014
1432014
Two-dimensional Fröhlich interaction in transition-metal dichalcogenide monolayers: Theoretical modeling and first-principles calculations
T Sohier, M Calandra, F Mauri
Physical Review B 94 (8), 085415, 2016
1162016
Phonon-limited resistivity of graphene by first-principles calculations: Electron-phonon interactions, strain-induced gauge field, and Boltzmann equation
T Sohier, M Calandra, CH Park, N Bonini, N Marzari, F Mauri
Physical Review B 90 (12), 125414, 2014
1022014
Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene
T Sohier, M Calandra, F Mauri
Physical Review B 96 (7), 075448, 2017
1012017
Breakdown of optical phonons' splitting in two-dimensional materials
T Sohier, M Gibertini, M Calandra, F Mauri, N Marzari
Nano Letters 17 (6), 3758-3763, 2017
812017
Mobility of two-dimensional materials from first principles in an accurate and automated framework
T Sohier, D Campi, N Marzari, M Gibertini
Physical Review Materials 2 (11), 114010, 2018
632018
Enhanced electron-phonon interaction in multivalley materials
T Sohier, E Ponomarev, M Gibertini, H Berger, N Marzari, N Ubrig, ...
Physical Review X 9 (3), 031019, 2019
292019
Extraordinary high room-temperature carrier mobility in graphene-WSe heterostructures
L Banszerus, T Sohier, A Epping, F Winkler, F Libisch, F Haupt, ...
arXiv preprint arXiv:1909.09523, 2019
182019
Density-functional calculation of static screening in two-dimensional materials: The long-wavelength dielectric function of graphene
T Sohier, M Calandra, F Mauri
Physical Review B 91 (16), 165428, 2015
182015
Ultralow-voltage design of graphene PN junction quantum reflective switch transistor
T Sohier, B Yu
Applied Physics Letters 98 (21), 213104, 2011
152011
Valley-engineering mobilities in two-dimensional materials
T Sohier, M Gibertini, D Campi, G Pizzi, N Marzari
Nano letters 19 (6), 3723-3729, 2019
142019
Electric field exfoliation and high-TC superconductivity in field-effect hole-doped hydrogenated diamond (111)
D Romanin, T Sohier, D Daghero, F Mauri, RS Gonnelli, M Calandra
Applied Surface Science 496, 143709, 2019
72019
Electrons and phonons in graphene: electron-phonon coupling, screening and transport in the field effect setup
T Sohier
Université Pierre et Marie Curie-Paris VI, 2015
62015
Profiling novel high-conductivity 2D semiconductors
T Sohier, M Gibertini, N Marzari
2D Materials 8 (1), 015025, 2020
32020
Remote free-carrier screening to boost the mobility of Fröhlich-limited two-dimensional semiconductors
T Sohier, M Gibertini, MJ Verstraete
Physical Review Materials 5 (2), 024004, 2021
22021
Hot-Carrier Cooling in High-Quality Graphene Is Intrinsically Limited by Optical Phonons
EAA Pogna, X Jia, A Principi, A Block, L Banszerus, J Zhang, X Liu, ...
ACS nano, 2021
12021
Gate control of spin-layer-locking FETs and application to monolayer LuIO
R Zhang, A Marrazzo, M Verstraete, N Marzari, T Sohier
arXiv preprint arXiv:2106.07913, 2021
2021
High-throughput searches for novel 2D and 1D materials
D Campi, N Mounet, M Gibertini, A Marrazzo, T Sohier, G Pizzi, N Marzari
Bulletin of the American Physical Society, 2021
2021
Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride
Y Wang, T Sohier, K Watanabe, T Taniguchi, MJ Verstraete, E Tutuc
Applied Physics Letters 118 (10), 102105, 2021
2021
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