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Writam Banerjee
Writam Banerjee
Verifierad e-postadress på globalfoundries.com
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Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.
S Liu, N Lu, X Zhao, H Xu, W Banerjee, H Lv, S Long, Q Li, Q Liu, M Liu
Advanced Materials (Deerfield Beach, Fla.) 28 (48), 10623-10629, 2016
2092016
Challenges and applications of emerging nonvolatile memory devices
W Banerjee
Electronics 9 (6), 1029, 2020
2052020
Confining cation injection to enhance CBRAM performance by nanopore graphene layer
X Zhao, S Liu, J Niu, L Liao, Q Liu, X Xiao, H Lv, S Long, W Banerjee, W Li, ...
Small 13 (35), 1603948, 2017
1612017
Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory
H Lv, X Xu, H Liu, R Liu, Q Liu, W Banerjee, H Sun, S Long, L Li, M Liu
Scientific reports 5 (1), 1-6, 2015
1412015
Nanocrystals for silicon-based light-emitting and memory devices
SK Ray, S Maikap, W Banerjee, S Das
Journal of Physics D: Applied Physics 46 (15), 153001, 2013
1382013
Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix
N Gogurla, SP Mondal, AK Sinha, AK Katiyar, W Banerjee, SC Kundu, ...
Nanotechnology 24 (34), 345202, 2013
1182013
Various threshold switching devices for integrate and fire neuron applications
D Lee, M Kwak, K Moon, W Choi, J Park, J Yoo, J Song, S Lim, C Sung, ...
Advanced Electronic Materials 5 (9), 1800866, 2019
1092019
Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays
Q Luo, X Xu, H Liu, H Lv, T Gong, S Long, Q Liu, H Sun, W Banerjee, L Li, ...
Nanoscale 8 (34), 15629-15636, 2016
1062016
Full imitation of synaptic metaplasticity based on memristor devices
Q Wu, H Wang, Q Luo, W Banerjee, J Cao, X Zhang, F Wu, Q Liu, L Li, ...
Nanoscale 10 (13), 5875-5881, 2018
1052018
Electronic imitation of behavioral and psychological synaptic activities using TiO x/Al 2 O 3-based memristor devices
W Banerjee, Q Liu, H Lv, S Long, M Liu
Nanoscale 9 (38), 14442-14450, 2017
1052017
Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells
Q Luo, X Xu, H Liu, H Lv, T Gong, S Long, Q Liu, H Sun, W Banerjee, L Li, ...
2015 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2015
972015
Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
W Banerjee, A Kashir, S Kamba
Small 18 (23), 2107575, 2022
912022
Atomic view of filament growth in electrochemical memristive elements
H Lv, X Xu, P Sun, H Liu, Q Luo, Q Liu, W Banerjee, H Sun, S Long, L Li, ...
Scientific Reports 5 (1), 13311, 2015
882015
Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices
Q Wu, W Banerjee, J Cao, Z Ji, L Li, M Liu
Applied Physics Letters 113 (2), 2018
782018
Engineering of defects in resistive random access memory devices
W Banerjee, Q Liu, H Hwang
Journal of Applied Physics 127 (5), 2020
762020
Cu BEOL compatible selector with high selectivity (> 107), extremely low off-current (∼ pA) and high endurance (> 1010)
Q Luo, X Xu, H Liu, H Lv, T Gong, S Long, Q Liu, H Sun, W Banerjee, L Li, ...
2015 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2015
762015
Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity
RD Nikam, M Kwak, J Lee, KG Rajput, W Banerjee, H Hwang
Scientific reports 9 (1), 18883, 2019
652019
Design of CMOS compatible, high‐speed, highly‐stable complementary switching with multilevel operation in 3D vertically stacked novel HfO2/Al2O3/TiOx (HAT) RRAM
W Banerjee, X Zhang, Q Luo, H Lv, Q Liu, S Long, M Liu
Advanced Electronic Materials 4 (2), 1700561, 2018
632018
Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions
W Banerjee, H Hwang
Advanced Electronic Materials 5 (12), 1900744, 2019
602019
Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material
W Banerjee, X Xu, H Lv, Q Liu, S Long, M Liu
ACS omega 2 (10), 6888-6895, 2017
582017
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