| Catastrophic failure and fault-tolerant design of IGBT power electronic converters-an overview R Wu, F Blaabjerg, H Wang, M Liserre, F Iannuzzo IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society …, 2013 | 269 | 2013 |
| A 3-D-lumped thermal network model for long-term load profiles analysis in high-power IGBT modules AS Bahman, K Ma, P Ghimire, F Iannuzzo, F Blaabjerg IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3 …, 2016 | 173 | 2016 |
| A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations R Wu, H Wang, KB Pedersen, K Ma, P Ghimire, F Iannuzzo, F Blaabjerg IEEE Transactions on Industry Applications 52 (4), 3306-3314, 2016 | 147 | 2016 |
| IGBT junction temperature measurement via peak gate current N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2016 | 144 | 2016 |
| IGBT junction temperature measurement via peak gate current N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2016 | 144 | 2016 |
| Reliability oriented design tool for the new generation of grid connected PV-inverters NC Sintamarean, F Blaabjerg, H Wang, F Iannuzzo, P de Place Rimmen IEEE Transactions on Power Electronics 30 (5), 2635-2644, 2014 | 139 | 2014 |
| High-voltage, high-performance switch using series-connected IGBTs C Abbate, G Busatto, F Iannuzzo IEEE Transactions on Power Electronics 25 (9), 2450-2459, 2010 | 129 | 2010 |
| A short-circuit safe operation area identification criterion for SiC MOSFET power modules PD Reigosa, F Iannuzzo, H Luo, F Blaabjerg IEEE Transactions on Industry Applications 53 (3), 2880-2887, 2016 | 102 | 2016 |
| IR camera validation of IGBT junction temperature measurement via peak gate current N Baker, L Dupont, S Munk-Nielsen, F Iannuzzo, M Liserre IEEE Transactions on Power Electronics 32 (4), 3099-3111, 2017 | 101 | 2017 |
| A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis L Ceccarelli, PD Reigosa, F Iannuzzo, F Blaabjerg Microelectronics Reliability 76, 272-276, 2017 | 90 | 2017 |
| Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy L Ceccarelli, RM Kotecha, AS Bahman, F Iannuzzo, HA Mantooth IEEE Transactions on Power Electronics 34 (10), 9698-9708, 2019 | 74 | 2019 |
| Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation UM Choi, F Blaabjerg, F Iannuzzo, S Jørgensen Microelectronics Reliability 55 (9-10), 2022-2026, 2015 | 68 | 2015 |
| Role of threshold voltage shift in highly accelerated power cycling tests for SiC MOSFET modules H Luo, F Iannuzzo, M Turnaturi IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019 | 66 | 2019 |
| Physical CAD model for high-voltage IGBTs based on lumped-charge approach F Iannuzzo, G Busatto IEEE Transactions on Power Electronics 19 (4), 885-893, 2004 | 65 | 2004 |
| Design of low-inductance switching power cell for GaN HEMT based inverter E Gurpinar, F Iannuzzo, Y Yang, A Castellazzi, F Blaabjerg IEEE Transactions on Industry Applications 54 (2), 1592-1601, 2017 | 64 | 2017 |
| Enabling junction temperature estimation via collector-side thermo-sensitive electrical parameters through emitter stray inductance in high-power IGBT modules H Luo, W Li, F Iannuzzo, X He, F Blaabjerg IEEE Transactions on Industrial Electronics 65 (6), 4724-4738, 2017 | 62 | 2017 |
| Investigation and classification of short-circuit failure modes based on three-dimensional safe operating area for high-power IGBT modules Y Chen, W Li, F Iannuzzo, H Luo, X He, F Blaabjerg IEEE Transactions on Power Electronics 33 (2), 1075-1086, 2017 | 62 | 2017 |
| Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions H Luo, F Iannuzzo, F Blaabjerg, M Turnaturi, E Mattiuzzo 2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2506-2511, 2017 | 59 | 2017 |
| Ensuring a reliable operation of two-level IGBT-based power converters: A review of monitoring and fault-tolerant approaches K Hu, Z Liu, Y Yang, F Iannuzzo, F Blaabjerg IEEE Access 8, 89988-90022, 2020 | 57 | 2020 |
| Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations UM Choi, F Blaabjerg, S Jørgensen, F Iannuzzo, H Wang, C Uhrenfeldt, ... Microelectronics Reliability 64, 403-408, 2016 | 55 | 2016 |
Frede BlaabjergProfessor in Power Electronics, Villum Investigator, Aalborg University, DenmarkVerified email at et.aau.dk
