B. Gunnar Malm
B. Gunnar Malm
Associate Professor in Integrated Devices and Circuits, KTH Royal Institute of Technology
Verified email at kth.se - Homepage
TitleCited byYear
The VLSI handbook
WK Chen
CRC press, 2010
Spin-torque and spin-Hall nano-oscillators
T Chen, RK Dumas, A Eklund, PK Muduli, A Houshang, AA Awad, ...
Proceedings of the IEEE 104 (10), 1919-1945, 2016
Mutually synchronized bottom-up multi-nanocontact spin–torque oscillators
S Sani, J Persson, SM Mohseni, Y Pogoryelov, PK Muduli, A Eklund, ...
Nature communications 4, 2731, 2013
500Bipolar Integrated OR/NOR Gate in 4H-SiC
L Lanni, BG Malm, M Östling, CM Zetterling
IEEE Electron Device Letters 34 (9), 1091-1093, 2013
Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs
B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling
IEEE Transactions on Electron Devices 57 (3), 704-711, 2010
High-voltage 4H-SiC PiN diodes with etched junction termination extension
R Ghandi, B Buono, M Domeij, G Malm, CM Zetterling, M Ostling
IEEE Electron Device Letters 30 (11), 1170-1172, 2009
A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology
R Hedayati, L Lanni, S Rodriguez, BG Malm, A Rusu, CM Zetterling
IEEE Electron Device Letters 35 (7), 693-695, 2014
Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC
L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling
IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012
SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation
Z Zhang, Z Qiu, PE HellstrÖmHellstrom, G Malm, J Olsson, J Lu, ...
IEEE Electron Device Letters 29 (1), 125-127, 2007
Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/gate dielectrics and TiN gate
M von Haartman, BG Malm, M Ostling
IEEE Transactions on Electron Devices 53 (4), 836-843, 2006
1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/pMOSFETs
M von Haartman, AC Lindgren, PE Hellstrom, BG Malm, SL Zhang, ...
IEEE Transactions on Electron Devices 50 (12), 2513-2519, 2003
Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator
J Seger, PE Hellström, J Lu, BG Malm, M von Haartman, M Östling, ...
Applied Physics Letters 86 (25), 253507, 2005
Direct observation and imaging of a spin-wave soliton with p-like symmetry
S Bonetti, R Kukreja, Z Chen, F Macià, JM Hernàndez, A Eklund, ...
Nature communications 6, 8889, 2015
Influence of emitter width and emitter–base distance on the current gain in 4H-SiC power BJTs
B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling
IEEE Transactions on Electron Devices 57 (10), 2664-2670, 2010
Carrier transport through a dry-etched InP-based two-dimensional photonic crystal
A Berrier, M Mulot, G Malm, M Östling, S Anand
Journal of applied physics 101 (12), 123101, 2007
Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field
A Eklund, S Bonetti, SR Sani, S Majid Mohseni, J Persson, S Chung, ...
Applied Physics Letters 104 (9), 092405, 2014
A robust spacer gate process for deca-nanometer high-frequency MOSFETs
J Hållstedt, PE Hellström, Z Zhang, BG Malm, J Edholm, J Lu, SL Zhang, ...
Microelectronic Engineering 83 (3), 434-439, 2006
A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
JV Grahn, H Fosshaug, M Jargelius, P Jönsson, M Linder, BG Malm, ...
Solid-State Electronics 44 (3), 549-554, 2000
SiC etching and sacrificial oxidation effects on the performance of 4H-SiC BJTs
L Lanni, BG Malm, M Östling, CM Zetterling
Materials Science Forum 778, 1005-1008, 2014
Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
L Donetti, F Gámiz, S Thomas, TE Whall, DR Leadley, PE Hellström, ...
Journal of Applied Physics 110 (6), 063711, 2011
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