| Bipolar integrated circuits in SiC for extreme environment operation CM Zetterling, A Hallén, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ... Semiconductor Science and Technology 32 (3), 034002, 2017 | 39 | 2017 |
| Silicon carbide fully differential amplifier characterized up to 500° C Y Tian, L Lanni, A Rusu, CM Zetterling IEEE Transactions on Electron Devices 63 (6), 2242-2247, 2016 | 24 | 2016 |
| A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500° C Y Tian, CM Zetterling IEEE Transactions on Electron Devices 64 (7), 2782-2788, 2017 | 19 | 2017 |
| SiC BJT compact DC model with continuous-temperature scalability from 300 to 773 K Y Tian, R Hedayati, CM Zetterling IEEE Transactions on Electron Devices 64 (9), 3588-3594, 2017 | 12 | 2017 |
| A 500° C monolithic SiC BJT latched comparator Y Tian, L Lanni, A Rusu, CM Zetterling Materials Science Forum 858, 921-924, 2016 | 6 | 2016 |
| High frequency characteristic of a monolithic 500° C OpAmp-RC integrator in SiC bipolar IC technology Y Tian, CM Zetterling Solid-State Electronics 135, 65-70, 2017 | 5 | 2017 |
| A high-ELD tolerant continuous-time sigma-delta modulator for bluetooth with DWA calibration Y Tian, Y Song, M Erixon, O Tylstedt Circuit Theory and Design (ECCTD), 2011 20th European Conference on, 270-273, 2011 | 4 | 2011 |
| Silicon carbide sigma-delta modulator for high temperature applications Y Tian Information and Communication Technology, KTH Royal Institute of Technology, 2014 | 1 | 2014 |
| SiC Readout IC for High Temperature Seismic Sensor System Y Tian KTH Royal Institute of Technology, 2017 | | 2017 |
