Ye Tian
TitleCited byYear
Bipolar integrated circuits in SiC for extreme environment operation
CM Zetterling, A HallÚn, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ...
Semiconductor Science and Technology 32 (3), 034002, 2017
172017
Silicon carbide fully differential amplifier characterized up to 500░ C
Y Tian, L Lanni, A Rusu, CM Zetterling
IEEE Transactions on Electron Devices 63 (6), 2242-2247, 2016
142016
A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500░ C
Y Tian, CM Zetterling
IEEE Transactions on Electron Devices 64 (7), 2782-2788, 2017
82017
SiC BJT compact DC model with continuous-temperature scalability from 300 to 773 K
Y Tian, R Hedayati, CM Zetterling
IEEE Transactions on Electron Devices 64 (9), 3588-3594, 2017
62017
A 500░ C monolithic SiC BJT latched comparator
Y Tian, L Lanni, A Rusu, CM Zetterling
Materials Science Forum 858, 921-924, 2016
62016
A high-ELD tolerant continuous-time sigma-delta modulator for bluetooth with DWA calibration
Y Tian, Y Song, M Erixon, O Tylstedt
Circuit Theory and Design (ECCTD), 2011 20th European Conference on, 270-273, 2011
32011
High frequency characteristic of a monolithic 500░ C OpAmp-RC integrator in SiC bipolar IC technology
Y Tian, CM Zetterling
Solid-State Electronics 135, 65-70, 2017
12017
Silicon carbide sigma-delta modulator for high temperature applications
Y Tian
Information and Communication Technology, KTH Royal Institute of Technology, 2014
12014
SiC Readout IC for High Temperature Seismic Sensor System
Y Tian
KTH Royal Institute of Technology, 2017
2017
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