Karsten Beckmann
Karsten Beckmann
Staff Integration Engineer, NY CREATES
Verifierad e-postadress på ny-creates.org
Citeras av
Citeras av
Nanoscale hafnium oxide rram devices exhibit pulse dependent behavior and multi-level resistance capability
K Beckmann, J Holt, H Manem, J Van Nostrand, NC Cady
Mrs Advances 1 (49), 3355-3360, 2016
A practical hafnium-oxide memristor model suitable for circuit design and simulation
S Amer, S Sayyaparaju, GS Rose, K Beckmann, NC Cady
2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017
Techniques for improved reliability in memristive crossbar PUF circuits
M Uddin, MB Majumder, GS Rose, K Beckmann, H Manem, Z Alamgir, ...
2016 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 212-217, 2016
Pulse width and height modulation for multi-level resistance in bi-layer TaOx based RRAM
Z Alamgir, K Beckmann, J Holt, NC Cady
Applied Physics Letters 111 (6), 2017
Performance enhancement of a time-delay PUF design by utilizing integrated nanoscale ReRAM devices
K Beckmann, H Manem, NC Cady
IEEE Transactions on Emerging Topics in Computing 5 (3), 304-316, 2016
Flow-based computing on nanoscale crossbars: Design and implementation of full adders
Z Alamgir, K Beckmann, N Cady, A Velasquez, SK Jha
2016 IEEE International Symposium on Circuits and Systems (ISCAS), 1870-1873, 2016
Accurate inference with inaccurate RRAM devices: Statistical data, model transfer, and on-line adaptation
G Charan, J Hazra, K Beckmann, X Du, G Krishnan, RV Joshi, NC Cady, ...
2020 57th ACM/IEEE Design Automation Conference (DAC), 1-6, 2020
Design considerations for memristive crossbar physical unclonable functions
M Uddin, MDB Majumder, K Beckmann, H Manem, Z Alamgir, NC Cady, ...
ACM Journal on Emerging Technologies in Computing Systems (JETC) 14 (1), 1-23, 2017
Silicon-CMOS compatible in-situ CCVD grown graphene transistors with ultra-high on/off-current ratio
PJ Wessely, F Wessely, E Birinci, K Beckmann, B Riedinger, U Schwalke
Physica E: Low-dimensional Systems and Nanostructures 44 (7-8), 1132-1135, 2012
Towards synaptic behavior of nanoscale reram devices for neuromorphic computing applications
K Beckmann, W Olin-Ammentorp, G Chakma, S Amer, GS Rose, C Hobbs, ...
ACM Journal on Emerging Technologies in Computing Systems (JETC) 16 (2), 1-18, 2020
Improving the Memory Window/Resistance Variability Trade-Off for 65nm CMOS Integrated HfO2 Based Nanoscale RRAM Devices
J Hazra, M Liehr, K Beckmann, S Rafiq, N Cady
2019 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2019
Robust RRAM-based in-memory computing in light of model stability
G Krishnan, J Sun, J Hazra, X Du, M Liehr, Z Li, K Beckmann, RV Joshi, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021
Stochasticity and robustness in spiking neural networks
W Olin-Ammentorp, K Beckmann, CD Schuman, JS Plank, NC Cady
Neurocomputing 419, 23-36, 2021
Impact of switching variability of 65nm CMOS integrated hafnium dioxide-based ReRAM devices on distinct level operations
M Liehr, J Hazra, K Beckmann, S Rafiq, N Cady
2020 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2020
Fabrication and performance of hybrid reram-cmos circuit elements for dynamic neural networks
M Liehr, J Hazra, K Beckmann, W Olin-Ammentorp, N Cady, R Weiss, ...
Proceedings of the International Conference on Neuromorphic Systems, 1-4, 2019
An extendable multi-purpose 3D neuromorphic fabric using nanoscale memristors
H Manem, K Beckmann, M Xu, R Carroll, R Geer, NC Cady
2015 IEEE Symposium on Computational Intelligence for Security and Defense …, 2015
A hafnium-oxide memristive dynamic adaptive neural network array
G Chakma, ME Dean, GS Rose, K Beckmann, H Manem, N Cady
International Workshop on Post-Moore’s Era Supercomputing (PMES), Salt Lake …, 2016
The effect of different oxygen exchange layers on TaOx based RRAM devices
Z Alamgir, J Holt, K Beckmann, NC Cady
Semiconductor Science and Technology 33 (1), 015014, 2017
Design techniques for in-field memristor forming circuits
S Amer, GS Rose, K Beckmann, NC Cady
2017 IEEE 60th International Midwest Symposium on Circuits and Systems …, 2017
The effect of reactive ion etch (RIE) process conditions on ReRAM device performance
K Beckmann, J Holt, W Olin-Ammentorp, Z Alamgir, J Van Nostrand, ...
Semiconductor Science and Technology 32 (9), 095013, 2017
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