Saleh Kargarrazi
Saleh Kargarrazi
Stanford Aeronautics and Astronautics
Verified email at stanford.edu
TitleCited byYear
500 C bipolar SiC linear voltage regulator
S Kargarrazi, L Lanni, S Saggini, A Rusu, CM Zetterling
IEEE Transactions on Electron Devices 62 (6), 1953-1957, 2015
352015
A monolithic SiC drive circuit for SiC Power BJTs
S Kargarrazi, L Lanni, A Rusu, CM Zetterling
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
322015
Bipolar integrated circuits in SiC for extreme environment operation
CM Zetterling, A Hallén, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ...
Semiconductor Science and Technology 32 (3), 034002, 2017
212017
A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier
S Kargarrazi, L Lanni, CM Zetterling
Solid-State Electronics 116, 33-37, 2016
182016
Design and characterization of 500° C Schmitt trigger in 4H-SiC
S Kargarrazi, L Lanni, CM Zetterling
Materials Science Forum 821, 897-901, 2015
182015
500 C, high current linear voltage regulator in 4H-SiC BJT technology
S Kargarrazi, H Elahipanah, S Rodriguez, CM Zetterling
IEEE Electron Device Letters 39 (4), 548-551, 2018
112018
500° C high current 4H-SiC lateral BJTs for high-temperature integrated circuits
H Elahipanah, S Kargarrazi, A Salemi, M Östling, CM Zetterling
IEEE Electron Device Letters 38 (10), 1429-1432, 2017
112017
500 C SiC PWM Integrated Circuit
S Kargarrazi, H Elahipanah, S Saggini, D Senesky, CM Zetterling
IEEE Transactions on Power Electronics 34 (3), 1997-2001, 2018
72018
High-temperature passive components for extreme environments
J Colmenares, S Kargarrazi, H Elahipanah, HP Nee, CM Zetterling
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016
72016
High temperature bipolar SiC power integrated circuits
S Kargarrazi
KTH Royal Institute of Technology, 2017
52017
Cascode GaN/SiC power device for MHz switching
J Xu, L Gu, Z Ye, S Kargarrazi, J Rivas-Davila
2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 2780-2785, 2019
42019
Stable Operation of AlGaN/GaN HEMTs for 25 h at 400° C in air
S Kargarrazi, AS Yalamarthy, PF Satterthwaite, SW Blankenberg, ...
IEEE Journal of the Electron Devices Society 7, 931-935, 2019
12019
A Metaheuristic Approach for an Optimized Design of a Silicon Carbide Operational Amplifier
M Pourreza, S Kargarrazi
Integral Methods in Science and Engineering, Volume 2, 211-219, 2017
12017
Bipolar Silicon Carbide Integrated Circuits for High Temperature Power Applications
S Kargarrazi
KTH Royal Institute of Technology, 2014
12014
Extreme Temperature Modeling of AlGaN/GaN HEMTs
SA Albahrani, D Mahajan, S Kargarrazi, D Schwantuschke, T Gneiting, ...
IEEE Transactions on Electron Devices 67 (2), 430-437, 2020
2020
Wide Bandgap Integrated Circuits for High Power Management in Extreme Environments
CM Zetterling, S Kargarrazi, M Shakir
Next-Generation ADCs, High-Performance Power Management, and Technology …, 2020
2020
Cascode GaN/SiC: A Wide-Bandgap Heterogenous Power Device for High-Frequency Applications
J Xu, L Gu, Z Ye, S Kargarrazi, JMR Davila
IEEE Transactions on Power Electronics, 2019
2019
500° C SiC-based driver IC for SiC power MOSFETs
S Kargarrazi, H Elahipanah, Z Tong, D Senesky, CM Zetterling
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
2019
TA Karatsori, CG Theodorou, A. Tsormpatzoglou, S. Barraud, G. Ghibaudo, and CA Dimitriadis 424
D Mahajan, S Kargarrazi, D Schwantuschke, T Gneiting, DG Senesky, ...
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Articles 1–19