RASEONG KIM
RASEONG KIM
Verified email at intel.com
Title
Cited by
Cited by
Year
Influence of dimensionality on thermoelectric device performance
R Kim, S Datta, MS Lundstrom
Journal of Applied Physics 105 (3), 034506, 2009
2292009
On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients
C Jeong, R Kim, M Luisier, S Datta, M Lundstrom
Journal of Applied Physics 107 (2), 023707, 2010
1622010
Relaxation of optically excited carriers in graphene
R Kim, V Perebeinos, P Avouris
Physical Review B 84 (7), 075449, 2011
1162011
Cooling of photoexcited carriers in graphene by internal and substrate phonons
T Low, V Perebeinos, R Kim, M Freitag, P Avouris
Physical Review B 86 (4), 045413, 2012
962012
Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at Lg=13nm, including P-TFET and variation considerations
UE Avci, DH Morris, S Hasan, R Kotlyar, R Kim, R Rios, DE Nikonov, ...
2013 IEEE International Electron Devices Meeting, 33.4. 1-33.4. 4, 2013
762013
Computational study of the Seebeck coefficient of one-dimensional composite nano-structures
R Kim, MS Lundstrom
Journal of Applied Physics 110 (3), 034511, 2011
562011
Notes on fermi-dirac integrals
R Kim, X Wang, M Lundstrom
arXiv preprint arXiv:0811.0116, 2008
562008
On the best bandstructure for thermoelectric performance: A Landauer perspective
C Jeong, R Kim, MS Lundstrom
Journal of Applied Physics 111 (11), 113707, 2012
512012
Effects of surface orientation on the performance of idealized III–V thin-body ballistic n-MOSFETs
R Kim, T Rakshit, R Kotlyar, S Hasan, CE Weber
IEEE electron device letters 32 (6), 746-748, 2011
462011
Physics of carrier backscattering in one-and two-dimensional nanotransistors
R Kim, MS Lundstrom
IEEE transactions on electron devices 56 (1), 132-139, 2008
452008
Characteristic features of 1-D ballistic transport in nanowire MOSFETs
R Kim, MS Lundstrom
IEEE transactions on nanotechnology 7 (6), 787-794, 2008
452008
Computational study of energy filtering effects in one-dimensional composite nano-structures
R Kim, MS Lundstrom
Journal of Applied Physics 111 (2), 024508, 2012
412012
On momentum conservation and thermionic emission cooling
R Kim, C Jeong, MS Lundstrom
Journal of Applied Physics 107 (5), 054502, 2010
372010
Integrated circuits and systems and methods for producing the same
DE Nikonov, RL Sankman, R Kim, J Pan
US Patent 8,963,135, 2015
352015
Source/drain doping effects and performance analysis of ballistic III-V n-MOSFETs
R Kim, UE Avci, IA Young
IEEE Journal of the Electron Devices Society 3 (1), 37-43, 2014
352014
CMOS performance benchmarking of Si, InAs, GaAs, and Ge nanowire n-and pMOSFETs with Lg= 13 nm based on atomistic quantum transport simulation including strain effects
R Kim, UE Avci, IA Young
2015 IEEE International Electron Devices Meeting (IEDM), 34.1. 1-34.1. 4, 2015
302015
Comprehensive performance benchmarking of III-V and Si nMOSFETs (gate length= 13 nm) considering supply voltage and OFF-current
R Kim, UE Avci, IA Young
IEEE Transactions on Electron Devices 62 (3), 713-721, 2015
272015
Band structure lab
A Paul, M Luisier, N Neophytou, R Kim, J Geng, M McLennan, ...
doi, 2006
202006
Tunneling field effect transistors (tfets) with undoped drain underlap wrap-around regions
UE Avci, R Kim, IA Young
US Patent App. 14/779,943, 2016
132016
Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM technique
H Zhao, R Kim, A Paul, M Luisier, G Klimeck, FJ Ma, SC Rustagi, ...
IEEE electron device letters 30 (5), 526-528, 2009
132009
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