| p-GaN gate HEMTs with tungsten gate metal for high threshold voltage and low gate current I Hwang, J Kim, HS Choi, H Choi, J Lee, KY Kim, JB Park, JC Lee, J Ha, ... IEEE Electron Device Letters 34 (2), 202-204, 2013 | 277 | 2013 |
| Deep level trapped defect analysis in CH 3 NH 3 PbI 3 perovskite solar cells by deep level transient spectroscopy S Heo, G Seo, Y Lee, D Lee, M Seol, J Lee, JB Park, K Kim, DJ Yun, ... Energy & Environmental Science 10 (5), 1128-1133, 2017 | 236 | 2017 |
| Strain-driven electronic band structure modulation of Si nanowires KH Hong, J Kim, SH Lee, JK Shin Nano letters 8 (5), 1335-1340, 2008 | 202 | 2008 |
| Effects of TMAH Treatment on Device Performance of Normally Off MOSFET KW Kim, SD Jung, DS Kim, HS Kang, KS Im, JJ Oh, JB Ha, JK Shin, ... IEEE electron device letters 32 (10), 1376-1378, 2011 | 185 | 2011 |
| A comparative study of structural changes in lithium nickel cobalt manganese oxide as a function of Ni content during delithiation process K Min, K Kim, C Jung, SW Seo, YY Song, HS Lee, J Shin, E Cho Journal of Power Sources 315, 111-119, 2016 | 139 | 2016 |
| The structural and electrical evolution of graphene by oxygen plasma-induced disorder DC Kim, DY Jeon, HJ Chung, YS Woo, JK Shin, S Seo Nanotechnology 20 (37), 375703, 2009 | 132 | 2009 |
| 1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device I Hwang, H Choi, JW Lee, HS Choi, J Kim, J Ha, CY Um, SK Hwang, J Oh, ... 2012 24th international symposium on power semiconductor devices and ICs, 41-44, 2012 | 121 | 2012 |
| Impact of channel hot electrons on current collapse in AlGaN/GaN HEMTs I Hwang, J Kim, S Chong, HS Choi, SK Hwang, J Oh, JK Shin, UI Chung IEEE electron device letters 34 (12), 1494-1496, 2013 | 111 | 2013 |
| Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition J Heo, HJ Chung, SH Lee, H Yang, DH Seo, JK Shin, UI Chung, S Seo, ... Physical Review B 84 (3), 035421, 2011 | 104 | 2011 |
| Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses J Park, JH Choi, K Kong, JH Han, JH Park, N Kim, E Lee, D Kim, J Kim, ... Nature Photonics 15 (6), 449-455, 2021 | 99 | 2021 |
| Deep-learning-based inverse design model for intelligent discovery of organic molecules K Kim, S Kang, J Yoo, Y Kwon, Y Nam, D Lee, I Kim, YS Choi, Y Jung, ... npj Computational Materials 4 (1), 67, 2018 | 97 | 2018 |
| Nonvolatile memory cells and nonvolatile memory devices including the same HJ Kim, I Yoo, JK Shin, CJ Kim, MJ Lee, K Hong US Patent 8,203,863, 2012 | 85 | 2012 |
| Band gap opening by two-dimensional manifestation of Peierls instability in graphene SH Lee, HJ Chung, J Heo, H Yang, J Shin, UI Chung, S Seo Acs Nano 5 (4), 2964-2969, 2011 | 82 | 2011 |
| Passivation of metal surface states: microscopic origin for uniform monolayer graphene by low temperature chemical vapor deposition I Jeon, H Yang, SH Lee, J Heo, DH Seo, J Shin, UI Chung, ZG Kim, ... Acs Nano 5 (3), 1915-1920, 2011 | 79 | 2011 |
| Reliability issues and models of sub-90nm NAND flash memory cells H Yang, H Kim, S Park, J Kim, SH Lee, JK Choi, D Hwang, C Kim, M Park, ... 2006 8th International Conference on Solid-State and Integrated Circuit …, 2006 | 66 | 2006 |
| Interfacial adhesion behavior of polyimides on silica glass: A molecular dynamics study K Min, Y Kim, S Goyal, SH Lee, M McKenzie, H Park, ES Savoy, ... Polymer 98, 1-10, 2016 | 59 | 2016 |
| Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With and Gate Dielectrics by Low-Frequency Noise Measurements HS Choi, S Jeon, H Kim, J Shin, C Kim, UI Chung IEEE electron device letters 32 (8), 1083-1085, 2011 | 56 | 2011 |
| Source-connected p-GaN gate HEMTs for increased threshold voltage I Hwang, J Oh, HS Choi, J Kim, H Choi, J Kim, S Chong, J Shin, UI Chung IEEE electron device letters 34 (5), 605-607, 2013 | 55 | 2013 |
| Asymmetric doping in silicon nanostructures: the impact of surface dangling bonds KH Hong, J Kim, JH Lee, J Shin, UI Chung Nano letters 10 (5), 1671-1676, 2010 | 48 | 2010 |
| Nitride semiconductor based power converting device J Woo-Chul, BW Lee, JK Shin, J Oh US Patent 9,082,693, 2015 | 44 | 2015 |
Ki-Ha HongHanbat National UniversityVerified email at hanbat.ac.kr
