| Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor E Lind, AI Persson, L Samuelson, LE Wernersson Nano Letters 6 (9), 1842-1846, 2006 | 176 | 2006 |
| High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors AW Dey, BM Borg, B Ganjipour, M Ek, KA Dick, E Lind, C Thelander, ... IEEE Electron device letters 34 (2), 211-213, 2013 | 146 | 2013 |
| Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson 2016 IEEE International Electron Devices Meeting (IEDM), 19.1. 1-19.1. 4, 2016 | 136 | 2016 |
| Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ... Nano Letters 10 (3), 809-812, 2010 | 136 | 2010 |
| Assembly of nanoscaled field effect transistors LE Wernersson, E Lind, T Bryllert, J Ohlsson, T Löwgren, L Samuelson, ... US Patent 8,063,450, 2011 | 124 | 2011 |
| Development of a vertical wrap-gated InAs FET C Thelander, C Rehnstedt, LE Froberg, E Lind, T Martensson, P Caroff, ... IEEE Transactions on Electron Devices 55 (11), 3030-3036, 2008 | 117 | 2008 |
| III-V nanowires—Extending a narrowing road LE Wernersson, C Thelander, E Lind, L Samuelson Proceedings of the IEEE 98 (12), 2047-2060, 2010 | 114 | 2010 |
| Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ... Nano letters 17 (7), 4373-4380, 2017 | 100 | 2017 |
| Ultralow resistance in situ Ohmic contacts to InGaAs/InP U Singisetti, MA Wistey, JD Zimmerman, BJ Thibeault, MJW Rodwell, ... Applied Physics Letters 93 (18), 2008 | 96 | 2008 |
| High-frequency gate-all-around vertical InAs nanowire MOSFETs on Si substrates S Johansson, E Memisevic, LE Wernersson, E Lind IEEE Electron Device Letters 35 (5), 518-520, 2014 | 95 | 2014 |
| High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET M Egard, L Ohlsson, BM Borg, F Lenrick, R Wallenberg, LE Wernersson, ... 2011 International Electron Devices Meeting, 13.2. 1-13.2. 4, 2011 | 95 | 2011 |
| Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2 R Timm, A Fian, M Hjort, C Thelander, E Lind, JN Andersen, ... Applied Physics Letters 97 (13), 2010 | 92 | 2010 |
| A High-Frequency Transconductance Method for Characterization of High- Border Traps in III-V MOSFETs S Johansson, M Berg, KM Persson, E Lind IEEE Transactions on Electron Devices 60 (2), 776-781, 2012 | 90 | 2012 |
| Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors AW Dey, J Svensson, M Ek, E Lind, C Thelander, LE Wernersson Nano letters 13 (12), 5919-5924, 2013 | 85 | 2013 |
| Temperature dependent properties of InSb and InAs nanowire field-effect transistors HA Nilsson, P Caroff, C Thelander, E Lind, O Karlström, LE Wernersson Applied Physics Letters 96 (15), 2010 | 84 | 2010 |
| Low resistance, nonalloyed Ohmic contacts to InGaAs AM Crook, E Lind, Z Griffith, MJW Rodwell, JD Zimmerman, AC Gossard, ... Applied Physics Letters 91 (19), 2007 | 82 | 2007 |
| High-performance inas nanowire mosfets AW Dey, C Thelander, E Lind, KA Dick, BM Borg, M Borgstrom, P Nilsson, ... IEEE Electron Device Letters 33 (6), 791-793, 2012 | 80 | 2012 |
| High-Frequency Performance of Self-Aligned Gate-Last Surface ChannelMOSFET M Egard, L Ohlsson, M Arlelid, KM Persson, BM Borg, F Lenrick, ... IEEE Electron Device Letters 33 (3), 369-371, 2012 | 78 | 2012 |
| Extrinsic and intrinsic performance of vertical InAs nanowire MOSFETs on Si substrates KM Persson, M Berg, MB Borg, J Wu, S Johansson, J Svensson, ... IEEE Transactions on Electron Devices 60 (9), 2761-2767, 2013 | 75 | 2013 |
| III-V heterostructure nanowire tunnel FETs E Lind, E Memišević, AW Dey, LE Wernersson IEEE Journal of the Electron Devices Society 3 (3), 96-102, 2015 | 74 | 2015 |
Wernersson Lars-ErikLund UniversityVerified email at eit.lth.se
