| Infrared dielectric functions and phonon modes of high-quality ZnO films N Ashkenov, BN Mbenkum, C Bundesmann, V Riede, M Lorenz, ... Journal of Applied Physics 93 (1), 126-133, 2003 | 766 | 2003 |
| On the organization and thermal behavior of functional groups on Ti3C2 MXene surfaces in vacuum I Persson, LÅ Näslund, J Halim, MW Barsoum, V Darakchieva, J Palisaitis, ... 2D Materials 5 (1), 015002, 2017 | 229 | 2017 |
| Two-dimensional electron gas density in Al1− xInxN/AlN/GaN heterostructures (0.03≤ x≤ 0.23) M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean, V Darakchieva, ... Journal of Applied Physics 103 (9), 2008 | 217 | 2008 |
| Tailoring structure, composition, and energy storage properties of MXenes from selective etching of in‐plane, chemically ordered MAX phases I Persson, A El Ghazaly, Q Tao, J Halim, S Kota, V Darakchieva, ... Small 14 (17), 1703676, 2018 | 179 | 2018 |
| 2D transition metal carbides (MXenes) for carbon capture I Persson, J Halim, H Lind, TW Hansen, JB Wagner, LÅ Näslund, ... Advanced Materials 31 (2), 1805472, 2019 | 174 | 2019 |
| Anisotropy, phonon modes, and free charge carrier parameters in monoclinic -gallium oxide single crystals M Schubert, R Korlacki, S Knight, T Hofmann, S Schöche, V Darakchieva, ... Physical Review B 93 (12), 125209, 2016 | 171 | 2016 |
| On the lattice parameters of GaN V Darakchieva, B Monemar, A Usui Applied Physics Letters 91 (3), 2007 | 135 | 2007 |
| Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic A Mock, R Korlacki, C Briley, V Darakchieva, B Monemar, Y Kumagai, ... Physical Review B 96 (24), 245205, 2017 | 131 | 2017 |
| Anisotropic strain and phonon deformation potentials in GaN V Darakchieva, T Paskova, M Schubert, H Arwin, PP Paskov, B Monemar, ... Physical Review B 75 (19), 195217, 2007 | 122 | 2007 |
| Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS) H Pedersen, S Leone, A Henry, FC Beyer, V Darakchieva, E Janzén Journal of crystal growth 307 (2), 334-340, 2007 | 110 | 2007 |
| High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire T Paskova, R Kroeger, S Figge, D Hommel, V Darakchieva, B Monemar, ... Applied physics letters 89 (5), 2006 | 97 | 2006 |
| How much oxygen can a MXene surface take before it breaks? I Persson, J Halim, TW Hansen, JB Wagner, V Darakchieva, J Palisaitis, ... Advanced Functional Materials 30 (47), 1909005, 2020 | 95 | 2020 |
| Electronic and optical characterization of 2D Ti2C and Nb2C (MXene) thin films J Halim, I Persson, EJ Moon, P Kühne, V Darakchieva, POÅ Persson, ... Journal of Physics: Condensed Matter 31 (16), 165301, 2019 | 86 | 2019 |
| Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers T Paskova, V Darakchieva, PP Paskov, J Birch, E Valcheva, POA Persson, ... Journal of crystal growth 281 (1), 55-61, 2005 | 83 | 2005 |
| Effects of strain and composition on the lattice parameters and applicability of Vegard’s rule in Al-rich Al1− xInxN films grown on sapphire V Darakchieva, M Beckers, MY Xie, L Hultman, B Monemar, JF Carlin, ... Journal of Applied Physics 103 (10), 2008 | 74 | 2008 |
| Strain-related structural and vibrational properties of thin epitaxial AlN layers V Darakchieva, J Birch, M Schubert, T Paskova, S Tungasmita, G Wagner, ... Physical Review B 70 (4), 045411, 2004 | 74 | 2004 |
| Lattice parameters, deviations from Vegard’s rule, and E2 phonons in InAlN V Darakchieva, MY Xie, F Tasnadi, IA Abrikosov, L Hultman, B Monemar, ... Applied Physics Letters 93 (26), 2008 | 61 | 2008 |
| Conductive polymer nanoantennas for dynamic organic plasmonics S Chen, ESH Kang, M Shiran Chaharsoughi, V Stanishev, P Kühne, ... Nature Nanotechnology 15 (1), 35-40, 2020 | 60 | 2020 |
| Deformation potentials of the and modes of InN V Darakchieva, PP Paskov, E Valcheva, T Paskova, B Monemar, ... Applied physics letters 84 (18), 3636-3638, 2004 | 56 | 2004 |
| Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures T Hofmann, P Kühne, S Schöche, T Chen Jr, U Forsberg, E Janzén, ... Applied Physics Letters 101 (19), 2012 | 55 | 2012 |
