| Insulating characteristics of polyvinyl alcohol for integrated electronics EA Van Etten, ES Ximenes, LT Tarasconi, ITS Garcia, MMC Forte, ... Thin Solid Films 568, 111-116, 2014 | 113 | 2014 |
| Instability of p–i–n perovskite solar cells under reverse bias RAZ Razera, DA Jacobs, F Fu, P Fiala, M Dussouillez, F Sahli, TCJ Yang, ... Journal of materials chemistry A 8 (1), 242-250, 2020 | 93 | 2020 |
| A novel voltage-mode CMOS quaternary logic design RCG da Silva, H Boudinov, L Carro IEEE Transactions on Electron devices 53 (6), 1480-1483, 2006 | 88 | 2006 |
| Quaternary look-up tables using voltage-mode CMOS logic design R Cunha, H Boudinov, L Carro 37th International Symposium on Multiple-Valued Logic (ISMVL'07), 56-56, 2007 | 80 | 2007 |
| Electrical isolation in GaAs by light ion irradiation: The role of antisite defects JP De Souza, I Danilov, H Boudinov Applied physics letters 68 (4), 535-537, 1996 | 63 | 1996 |
| Thermal stability of the electrical isolation in n-type gallium arsenide layers irradiated with H, He, and B ions JP De Souza, I Danilov, H Boudinov Journal of applied physics 81 (2), 650-655, 1997 | 60 | 1997 |
| Electrical isolation of GaN by MeV ion irradiation H Boudinov, SO Kucheyev, JS Williams, C Jagadish, G Li Applied Physics Letters 78 (7), 943-945, 2001 | 58 | 2001 |
| Chr. Klatt, S. Kalbitzer JHR Dos Santos, PL Grande, H Boudinov, M Behar, R Stoll Nucl. Instr. and Meth. B 106 (5), 1995 | 58* | 1995 |
| Effect of irradiation temperature and ion flux on electrical isolation of SO Kucheyev, H Boudinov, JS Williams, C Jagadish, G Li Journal of applied physics 91 (7), 4117-4120, 2002 | 51 | 2002 |
| Electrical isolation of -type and -type InP layers by proton bombardment H Boudinov, HH Tan, C Jagadish Journal of Applied Physics 89 (10), 5343-5347, 2001 | 41 | 2001 |
| Angular dependence of the electronic energy loss of 800-keV He ionsalong the Si< 100> direction JHR Dos Santos, PL Grande, M Behar, H Boudinov, G Schiwietz Physical Review B 55 (7), 4332, 1997 | 39 | 1997 |
| Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide R Palmieri, C Radtke, H Boudinov, EF Da Silva Applied Physics Letters 95 (11), 2009 | 37 | 2009 |
| AC-biased organic light-emitting field-effect transistors from naphthyl end-capped oligothiophenes X Liu, I Wallmann, H Boudinov, J Kjelstrup-Hansen, M Schiek, A Lützen, ... Organic Electronics 11 (6), 1096-1102, 2010 | 35 | 2010 |
| Distinguishing bulk traps and interface states in deep-level transient spectroscopy AVP Coelho, MC Adam, H Boudinov Journal of Physics D: Applied Physics 44 (30), 305303, 2011 | 32 | 2011 |
| Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate H Boudinov, JP De Souza, CK Saul Journal of applied physics 86 (10), 5909-5911, 1999 | 30 | 1999 |
| Nanowire growth on Si wafers by oxygen implantation and annealing EA de Vasconcelos, FRP dos Santos, EF da Silva Jr, H Boudinov Applied Surface Science 252 (15), 5572-5574, 2006 | 28 | 2006 |
| Ion beam mixing of Fe thin film and Si substrate DL Santos, JP De Souza, L Amaral, H Boudinov Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 28 | 1995 |
| Photoluminescence from Si nanocrystals induced by high-temperature implantation in US Sias, EC Moreira, E Ribeiro, H Boudinov, L Amaral, M Behar Journal of applied physics 95 (9), 5053-5059, 2004 | 25 | 2004 |
| Transport properties of silicon implanted with bismuth E Abramof, AF da Silva, BE Sernelius, JP De Souza, H Boudinov Physical Review B 55 (15), 9584, 1997 | 25 | 1997 |
| Electrical activation of boron coimplanted with carbon in a silicon substrate JP De Souza, H Boudinov Journal of applied physics 74 (11), 6599-6602, 1993 | 25 | 1993 |
