| Stuck bits study in DDR3 SDRAMs using 45-MeV proton beam C Lim, HS Jeong, G Bak, S Baeg, SJ Wen, R Wong IEEE Transactions on Nuclear Science 62 (2), 520-526, 2015 | 24 | 2015 |
| Soft error study on DDR4 SDRAMs using a 480 MeV proton beam M Park, SH Jeon, GY Bak, C Lim, S Baeg, SJ Wen, R Wong, N Yu 2017 IEEE International Reliability Physics Symposium (IRPS), SE-3.1-SE-3.6, 2017 | 11 | 2017 |
| Study of proton radiation effect to row hammer fault in DDR4 SDRAMs C Lim, K Park, G Bak, D Yun, M Park, S Baeg, SJ Wen, R Wong Microelectronics Reliability 80, 85-90, 2018 | 9 | 2018 |
| Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams GY Bak, S Lee, H Lee, KB Park, S Baeg, SJ Wen, R Wong, C Slayman 2015 IEEE International Reliability Physics Symposium, SE. 3.1-SE. 3.5, 2015 | 8 | 2015 |
| An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation SA Khan, C Lim, G Bak, S Baeg, S Lee Microelectronics Reliability 69, 100-108, 2017 | 5 | 2017 |
| FBGA solder ball defect effect on DDR4 data signal rise time and ISI measured by loading the data line with a capacitor M Waqar, S Baeg, G Bak, J Kwon, K Lee, SH Jeon Microelectronics Reliability 114, 113916, 2020 | 4 | 2020 |
| Exploitations of multiple rows hammering and retention time interactions in dram using x-ray radiation D Yun, M Park, G Bak, S Baeg, SJ Wen IEEE Access 9, 137514-137523, 2021 | 3 | 2021 |
| Comparative study of MC-50 and ANITA neutron beams by using 55 nm SRAM S Baeg, S Lee, GY Bak, H Jeong, SH Jeon Journal of the Korean Physical Society 61, 749-753, 2012 | 3 | 2012 |
| DDR4 data channel failure due to DC offset caused by intermittent solder ball fracture in FBGA package M Waqar, G Bak, J Kwon, S Baeg IEEE Access 9, 63002-63011, 2021 | 1 | 2021 |
| A theoretical and experimental investigation of Bragg's rule for energy-loss straggling in low mean energy loss regime in air and its constituents MHR Qasim, N Shahzadi, G Bak, S Baeg Vacuum 183, 109836, 2021 | 1 | 2021 |
| Failure Analysis of Galaxy S7 Edge Smartphone Using Neutron Radiation G Bak, S Baeg IEEE Transactions on Nuclear Science 67 (11), 2370-2381, 2020 | 1 | 2020 |
| Failure signature analysis of power-opens in DDR3 SDRAMs T Li, H Lee, G Bak, S Baeg Microelectronics Reliability 88, 277-281, 2018 | 1 | 2018 |
| DDR4 BER Degradation Due to Crack in FBGA Package Solder Ball M Waqar, G Bak, J Kwon, S Baeg Electronics 10 (12), 1445, 2021 | | 2021 |
