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Moncef Kadi
Moncef Kadi
Associate Professor, ESIGELEC
Verifierad e-postadress på esigelec.fr
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Characterization and modeling of the susceptibility of integrated circuits to conducted electromagnetic disturbances up to 1 GHz
I Chahine, M Kadi, E Gaboriaud, A Louis, B Mazari
IEEE Transactions on Electromagnetic Compatibility 50 (2), 285-293, 2008
772008
Characterization of electromagnetic fields close to microwave devices using electric dipole probes
L Bouchelouk, Z Riah, D Baudry, M Kadi, A Louis, B Mazari
International Journal of RF and Microwave Computer‐Aided Engineering: Co …, 2008
452008
A 3-D near-field modeling approach for electromagnetic interference prediction
H Shall, Z Riah, M Kadi
IEEE Transactions on Electromagnetic Compatibility 56 (1), 102-112, 2013
362013
Determination of the compaction of hot mix asphalt using high-frequency electromagnetic methods
C Fauchard, B Li, L Laguerre, B Heritier, N Benjelloun, M Kadi
NDT & E International 60, 40-51, 2013
342013
Plane wave spectrum theory applied to near-field measurements for electromagnetic compatibility investigations
D Baudry, M Kadi, Z Riah, C Arcambal, Y Vives-Gilabert, A Louis, ...
IET Science, Measurement & Technology 3 (1), 72-83, 2009
322009
Modeling IC snapback characteristics under electrostatic discharge stress
A Ramanujan, M Kadi, J Trémenbert, F Lafon, B Mazari
IEEE transactions on electromagnetic compatibility 51 (4), 901-908, 2009
232009
A novel approach for modeling near-field coupling with PCB traces
H Shall, Z Riah, M Kadi
IEEE Transactions on Electromagnetic Compatibility 56 (5), 1194-1201, 2014
202014
Robustness of 4H-SiC 1200 V Schottky diodes under high electrostatic discharge like human body model stresses: An in-depth failure analysis
P Denis, P Dherbécourt, O Latry, C Genevois, F Cuvilly, M Brault, M Kadi
Diamond and related materials 44, 62-70, 2014
162014
Failure analysis of aluminum electrolytic capacitors based on electrical and physicochemical characterizations
C Lachkar, M Kadi, JP Kouadio, M Presle, S El Yousfi, JF Goupy, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 5C-1.1-5C-1.7, 2017
152017
Post-processing of electric field measurements to calibrate a near-field dipole probe
Z Riah, D Baudry, M Kadi, A Louis, B Mazari
IET science, measurement & technology 5 (2), 29-36, 2011
142011
Broad band PCB probes for near field measurements
N Sivaraman, F Ndagljlmana, M Kadi, Z Riah
2017 International Symposium on Electromagnetic Compatibility-EMC EUROPE, 1-5, 2017
122017
High-frequency characterization and modeling of EMI filters under temperature variations
F Hami, H Boulzazen, M Kadi
IEEE Transactions on Electromagnetic Compatibility 59 (6), 1906-1915, 2017
122017
Prediction of 3D-near field coupling between a toroïdal inductor and a transmission line
H Shall, Z Riah, M Kadi
2013 IEEE International Symposium on Electromagnetic Compatibility, 651-656, 2013
122013
Evolution of CV and IV characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests
JZ Fu, F Fouquet, M Kadi, P Dherbécourt
Microelectronics Reliability 88, 652-655, 2018
112018
Using neural networks for predicting the integrated circuits susceptibility to conducted electromagnetic disturbances
I Chahine, M Kadi, E Gaboriaud, A Louis, B Mazari
2007 18th International Zurich Symposium on Electromagnetic Compatibility, 13-16, 2007
112007
Modelling of integrated circuit susceptibility to conducted electromagnetic disturbances using neural networks theory
I Chahine, M Kadi, E Gaboriaud, C Maziere, A Louis, B Mazari
Electronics Letters 42 (18), 1, 2006
92006
Experimental study of 600V GaN transistor under the short-circuit aging tests
JZ Fu, F Fouquet, M Kadi, P Dherbécourt
2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), 249-253, 2018
82018
Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance
A Alaeddine, M Kadi, K Daoud, H Maanane, P Eudeline
International Journal of Microwave and Wireless Technologies 1 (6), 475-482, 2009
82009
Effects of electromagnetic near-field stress on SiGe HBT’s reliability
A Alaeddine, M Kadi, K Daoud, B Mazari
Microelectronics Reliability 49 (9-11), 1029-1032, 2009
82009
Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition
O Latry, P Dherbecourt, P Denis, F Cuvilly, M Kadi
Engineering Failure Analysis 83, 185-192, 2018
72018
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Artiklar 1–20