Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators CD Dimitrakopoulos, S Purushothaman, J Kymissis, A Callegari, JM Shaw Science 283 (5403), 822-824, 1999 | 1106 | 1999 |
Methods for forming metal oxide layers with enhanced purity AC Callegari, FE Doany, EP Gousev, TH Zabel US Patent 6,395,650, 2002 | 516 | 2002 |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures C Cabral Jr, AC Callegari, MA Gribelyuk, PC Jamison, DL Lacey, ... US Patent 6,982,230, 2006 | 512 | 2006 |
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks S Zafar, A Callegari, E Gusev, MV Fischetti Journal of Applied physics 93 (11), 9298-9303, 2003 | 387 | 2003 |
Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films A Callegari, E Cartier, M Gribelyuk, HF Okorn-Schmidt, T Zabel Journal of Applied Physics 90 (12), 6466-6475, 2001 | 384 | 2001 |
Ultrathin high-K gate stacks for advanced CMOS devices EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 378 | 2001 |
Liquid crystal alignment on carbonaceous surfaces with orientational order J Stohr, MG Samant, J Luning, AC Callegari, P Chaudhari, JP Doyle, ... Science 292 (5525), 2299-2302, 2001 | 370 | 2001 |
Diamond-like carbon films from a hydrocarbon helium plasma FD Bailey, DA Buchanan, AC Callegari, HM Clearfield, FE Doany, ... US Patent 5,470,661, 1995 | 308 | 1995 |
Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same LP Buchwalter, AC Callegari, SA Cohen, TO Graham, JP Hummel, ... US Patent 6,184,121, 2001 | 289 | 2001 |
A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates S Zafar, Y Kim, V Narayanan, C Cabral, V Paruchuri, B Doris, J Stathis, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 23-25, 2006 | 286 | 2006 |
Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n‐type GaAs YC Shih, M Murakami, EL Wilkie, AC Callegari Journal of applied physics 62 (2), 582-590, 1987 | 257 | 1987 |
Sputter deposition of hydrogenated amorphous carbon film and applications thereof ED Babich, AC Callegari, FE Doany, S Purushothaman US Patent 5,830,332, 1998 | 215 | 1998 |
80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/gate dielectric for ULSI applications DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 179 | 2000 |
Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment A Callegari, PD Hoh, DA Buchanan, D Lacey Applied physics letters 54 (4), 332-334, 1989 | 174 | 1989 |
Microstructure studies of AuNiGe Ohmic contacts to n‐type GaAs M Murakami, KD Childs, JM Baker, A Callegari Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 156 | 1986 |
Method of film deposition, and fabrication of structures AC Callegari, DA Neumayer US Patent 6,664,186, 2003 | 144 | 2003 |
Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt-tuning dipoles with gate … T Ando, MM Frank, K Choi, C Choi, J Bruley, M Hopstaken, M Copel, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 124 | 2009 |
Charge trapping in high k gate dielectric stacks S Zafar, A Callegari, E Gusev, MV Fischetti Digest. International Electron Devices Meeting,, 517-520, 2002 | 122 | 2002 |
Low temperature thin film transistor fabrication AC Callegari, CD Dimitrakopoulos, S Purushothaman US Patent 6,207,472, 2001 | 117 | 2001 |
Inversion mode n-channel GaAs field effect transistor with high-k/metal gate JP De Souza, E Kiewra, Y Sun, A Callegari, DK Sadana, G Shahidi, ... Applied Physics Letters 92 (15), 2008 | 116 | 2008 |