| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 407 | 2018 |
| A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ... ECS Journal of Solid State Science and Technology 5 (9), P468, 2016 | 115 | 2016 |
| Diamond on III-nitride device FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart US Patent 10,002,958, 2018 | 107 | 2018 |
| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 77 | 2017 |
| Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ... IEEE Electron Device Letters 35 (8), 826-828, 2014 | 63 | 2014 |
| III-nitride P-channel field effect transistor with hole carriers in the channel FJ Kub, TJ Anderson, AD Koehler, KD Hobart US Patent 9,006,791, 2015 | 57 | 2015 |
| On the radiation tolerance of AlGaN/GaN HEMTs BD Weaver, TJ Anderson, AD Koehler, JD Greenlee, JK Hite, DI Shahin, ... ECS Journal of Solid State Science and Technology 5 (7), Q208, 2016 | 56 | 2016 |
| Review—Theory and Characterization of Doping and Defects in β-Ga2O3 MJ Tadjer, JL Lyons, N Nepal, JA Freitas Jr, AD Koehler, GM Foster ECS Journal of Solid State Science and Technology 8 (7), Q3187, 2019 | 53 | 2019 |
| Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ... Electron Device Letters, IEEE 34 (9), 1115-1117, 2013 | 52 | 2013 |
| Strain additivity in III-V channels for CMOSFETs beyond 22nm technology node S Suthram, Y Sun, P Majhi, I Ok, H Kim, HR Harris, N Goel, ... 2008 Symposium on VLSI Technology, 182-183, 2008 | 39 | 2008 |
| Effect of reduced extended defect density in MOCVD grown AlGaN/GaN HEMTs on native GaN substrates TJ Anderson, MJ Tadjer, JK Hite, JD Greenlee, AD Koehler, KD Hobart, ... IEEE Electron Device Letters 37 (1), 28-30, 2015 | 37 | 2015 |
| Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility M Chu, AD Koehler, A Gupta, T Nishida, SE Thompson Journal of Applied Physics 108 (10), 104502, 2010 | 35 | 2010 |
| Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process A Nath, AD Koehler, GG Jernigan, VD Wheeler, JK Hite, SC Hernández, ... Applied Physics Letters 104 (22), 224102, 2014 | 34 | 2014 |
| Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications MJ Tadjer, NA Mahadik, JA Freitas Jr, ER Glaser, AD Koehler, LE Luna, ... Gallium Nitride Materials and Devices XIII 10532, 1053212, 2018 | 30 | 2018 |
| Nanocrystalline diamond integration with III-nitride HEMTs TJ Anderson, KD Hobart, MJ Tadjer, AD Koehler, EA Imhoff, JK Hite, ... ECS Journal of Solid State Science and Technology 6 (2), Q3036, 2016 | 30 | 2016 |
| Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs AD Koehler, P Specht, TJ Anderson, BD Weaver, JD Greenlee, MJ Tadjer, ... IEEE Electron Device Letters 35 (12), 1194-1196, 2014 | 30 | 2014 |
| Electrical characterization of ALD HfO2 high-k dielectrics on (01) β-Ga2O3 DI Shahin, MJ Tadjer, VD Wheeler, AD Koehler, TJ Anderson, CR Eddy Jr, ... Applied Physics Letters 112 (4), 042107, 2018 | 29 | 2018 |
| Degradation mechanisms of 2 mev proton irradiated algan/gan hemts JD Greenlee, P Specht, TJ Anderson, AD Koehler, BD Weaver, ... Applied physics letters 107 (8), 083504, 2015 | 28 | 2015 |
| Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ... IEEE Electron Device Letters 35 (10), 1013-1015, 2014 | 27 | 2014 |
| Extraction of AlGaN/GaN HEMT gauge factor in the presence of traps AD Koehler, A Gupta, M Chu, S Parthasarathy, KJ Linthicum, JW Johnson, ... IEEE Electron device letters 31 (7), 665-667, 2010 | 27 | 2010 |
Travis J. AndersonNaval Research LaboratoryVerified email at nrl.navy.mil
