Andrew D. Koehler
Andrew D. Koehler
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Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric
MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ...
ECS Journal of Solid State Science and Technology 5 (9), P468, 2016
Diamond on III-nitride device
FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart
US Patent 10,002,958, 2018
Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation
TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ...
IEEE Electron Device Letters 35 (8), 826-828, 2014
III-nitride P-channel field effect transistor with hole carriers in the channel
FJ Kub, TJ Anderson, AD Koehler, KD Hobart
US Patent 9,006,791, 2015
On the radiation tolerance of AlGaN/GaN HEMTs
BD Weaver, TJ Anderson, AD Koehler, JD Greenlee, JK Hite, DI Shahin, ...
ECS Journal of Solid State Science and Technology 5 (7), Q208, 2016
Review—Theory and Characterization of Doping and Defects in β-Ga2O3
MJ Tadjer, JL Lyons, N Nepal, JA Freitas Jr, AD Koehler, GM Foster
ECS Journal of Solid State Science and Technology 8 (7), Q3187, 2019
Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ...
Electron Device Letters, IEEE 34 (9), 1115-1117, 2013
Strain additivity in III-V channels for CMOSFETs beyond 22nm technology node
S Suthram, Y Sun, P Majhi, I Ok, H Kim, HR Harris, N Goel, ...
2008 Symposium on VLSI Technology, 182-183, 2008
Effect of reduced extended defect density in MOCVD grown AlGaN/GaN HEMTs on native GaN substrates
TJ Anderson, MJ Tadjer, JK Hite, JD Greenlee, AD Koehler, KD Hobart, ...
IEEE Electron Device Letters 37 (1), 28-30, 2015
Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility
M Chu, AD Koehler, A Gupta, T Nishida, SE Thompson
Journal of Applied Physics 108 (10), 104502, 2010
Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process
A Nath, AD Koehler, GG Jernigan, VD Wheeler, JK Hite, SC Hernández, ...
Applied Physics Letters 104 (22), 224102, 2014
Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications
MJ Tadjer, NA Mahadik, JA Freitas Jr, ER Glaser, AD Koehler, LE Luna, ...
Gallium Nitride Materials and Devices XIII 10532, 1053212, 2018
Nanocrystalline diamond integration with III-nitride HEMTs
TJ Anderson, KD Hobart, MJ Tadjer, AD Koehler, EA Imhoff, JK Hite, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3036, 2016
Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs
AD Koehler, P Specht, TJ Anderson, BD Weaver, JD Greenlee, MJ Tadjer, ...
IEEE Electron Device Letters 35 (12), 1194-1196, 2014
Electrical characterization of ALD HfO2 high-k dielectrics on (01) β-Ga2O3
DI Shahin, MJ Tadjer, VD Wheeler, AD Koehler, TJ Anderson, CR Eddy Jr, ...
Applied Physics Letters 112 (4), 042107, 2018
Degradation mechanisms of 2 mev proton irradiated algan/gan hemts
JD Greenlee, P Specht, TJ Anderson, AD Koehler, BD Weaver, ...
Applied physics letters 107 (8), 083504, 2015
Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors
DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ...
IEEE Electron Device Letters 35 (10), 1013-1015, 2014
Extraction of AlGaN/GaN HEMT gauge factor in the presence of traps
AD Koehler, A Gupta, M Chu, S Parthasarathy, KJ Linthicum, JW Johnson, ...
IEEE Electron device letters 31 (7), 665-667, 2010
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